公开(公告)号：US20200035445A1

公开(公告)日：2020-01-30

申请号：US16286303

申请日：2019-02-26

Applicant: Hitachi High-Technologies Corporation

Inventor： Hao XU ,  Hiroshige UCHIDA ,  Shigeru Nakamoto ,  Kousuke FUKUCHI ,  Satomi INOUE

IPC: H01J37/22 ,  H01J37/32

Abstract: A plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma treatment; a radio frequency power supply configured to supply radio frequency power that generates plasma; a sample stage on which the sample is placed; and an ultraviolet light source configured to apply an ultraviolet ray. The apparatus further includes a controller configured to control the ultraviolet light source such that before the radio frequency power is supplied into the processing chamber, a pulse-modulated ultraviolet ray is applied into the processing chamber.

公开(公告)号：US20180269042A1

公开(公告)日：2018-09-20

申请号：US15982827

申请日：2018-05-17

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takeshi OHMORI ,  Daisuke SATOU ,  Tatehito USUI ,  Satomi INOUE ,  Kenji MAEDA

IPC: H01J37/32

Abstract: A plasma apparatus of processing a wafer disposed in a processing chamber using plasma includes one window, another window, a light receiving unit, a light source, and an optical branching unit which is disposed between the light source and the other window, branches light emitted by the light source to an optical path toward the processing chamber and an optical path in other direction, and reflects light in the processing chamber from the other window, and a detection unit which detects the light having been emitted from the plasma and received by the light receiving unit using one branched light and other branched and reflected light. The apparatus processes the wafer according to a condition for the processing which is adjusted based on a result of the detection.

公开(公告)号：US20160225681A1

公开(公告)日：2016-08-04

申请号：US14825098

申请日：2015-08-12

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ryoji ASAKURA ,  Kenji TAMAKI ,  Daisuke SHIRAISHI ,  Akira KAGOSHIMA ,  Satomi INOUE

IPC: H01L21/66 ,  H01L21/3065 ,  G01N21/68 ,  H01L21/67

CPC classification number: G01N21/68 ,  H01J37/32926 ,  H01J37/32972 ,  H01J37/3299 ,  H01L21/67253

Abstract: A plasma processing apparatus, plasma processing method, and plasma processing analysis method in which a suitable combination of wavelength, time interval, and etching condition parameter for control to change etching conditions is determined among wavelengths, time intervals, and changeable parameters for spectroscopic measurement data in order to ensure stable etching conditions. Specifically, a regression equation which represents the correlation between emission intensity and etching result at a wavelength and a time interval is obtained for each of two or more combinations of wavelength, time interval, and etching condition parameter. Furthermore, for each of the combinations, the amount of change is calculated from the regression equation when the value set for the etching condition parameter is changed. Among the combinations, the combination for which the amount of change is the smallest is determined as the combination of wavelength, time interval, and changed etching condition parameter to be used for control.

Abstract translation: 等离子体处理装置，等离子体处理方法和等离子体处理分析方法，其中在用于光谱测量数据的波长，时间间隔和可变参数中确定用于改变蚀刻条件的用于控制的波长，时间间隔和蚀刻条件参数的适当组合 以确保稳定的蚀刻条件。 具体地说，对于波长，时间间隔和蚀刻条件参数的两种以上的组合中的每一种，获得代表波长和时间间隔的发光强度与蚀刻相关性的回归方程。 此外，对于每个组合，当为蚀刻条件参数设定的值改变时，根据回归方程计算出变化量。 在组合中，将变化量最小的组合确定为用于控制的波长，时间间隔和改变的蚀刻条件参数的组合。

公开(公告)号：US20160211186A1

公开(公告)日：2016-07-21

申请号：US14851744

申请日：2015-09-11

Applicant: Hitachi High-Technologies Corporation

Inventor： Shigeru NAKAMOTO ,  Tatehito USUI ,  Satomi INOUE ,  Kousuke FUKUCHI

IPC: H01L21/66 ,  H01L21/3065 ,  H01L21/308 ,  H01J37/32

CPC classification number: H01J37/32972 ,  H01J37/32963

Abstract: A processing apparatus and a processing method for a semiconductor wafer, which allow stable end point detection, are provided. In the plasma processing apparatus or method in which a processing-target film layer of a film structure including a plurality of film layers formed in advance on a surface of a wafer mounted on a sample stage deployed within a processing chamber inside a vacuum vessel, by using plasma formed with the processing chamber, intensities of lights of a plurality of wavelengths are detected using data composed of results of reception of lights during a plurality of different time-intervals by an optical receiver which receives lights of the plurality of wavelengths from an inside of the processing chamber while processing is going.

Abstract translation: 提供一种能够进行稳定的端点检测的半导体晶片的处理装置和处理方法。 在等离子体处理装置或方法中，其中包括预先形成在安装在位于真空容器内的处理室内的样品台上的晶片的表面上的多个膜层的膜结构的处理目标膜层，通过 使用与处理室形成的等离子体，使用由多个不同时间间隔内的光的接收结果构成的数据来检测多个波长的光的强度，该光接收器从内部接收多个波长的光 的处理室。

公开(公告)号：US20190170653A1

公开(公告)日：2019-06-06

申请号：US16272354

申请日：2019-02-11

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ryoji ASAKURA ,  Kenji TAMAKI ,  Daisuke SHIRAISHI ,  Akira KAGOSHIMA ,  Satomi INOUE

IPC: G01N21/68 ,  H01J37/32

Abstract: A plasma processing apparatus, plasma processing method, and plasma processing analysis method in which a suitable combination of wavelength, time interval, and etching condition parameter for control to change etching conditions is determined among wavelengths, time intervals, and changeable parameters for spectroscopic measurement data in order to ensure stable etching conditions. Specifically, a regression equation which represents the correlation between emission intensity and etching result at a wavelength and a time interval is obtained for each of two or more combinations of wavelength, time interval, and etching condition parameter. Furthermore, for each of the combinations, the amount of change is calculated from the regression equation when the value set for the etching condition parameter is changed. Among the combinations, the combination for which the amount of change is the smallest is determined as the combination of wavelength, time interval, and changed etching condition parameter to be used for control.

公开(公告)号：US20180068909A1

公开(公告)日：2018-03-08

申请号：US15437026

申请日：2017-02-20

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Daisuke SHIRAISHI ,  Akira KAGOSHIMA ,  Yuji NAGATANI ,  Satomi INOUE

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L22/26 ,  H01J37/32082 ,  H01J37/32935 ,  H01J37/32972 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67253

Abstract: A plasma processing apparatus including a processing chamber, a radio frequency power source, a monitoring unit, and a calculation unit is provided. In the processing chamber, etching target film is etched by using plasma. The radio frequency power source supplies radio frequency electric power. The monitoring unit monitors light emission of the plasma. The calculation unit estimates an etching amount of plasma etching of the etching target film based on an emission intensity and a correlation between the etching amount of the etching target film and the emission intensity, the emission intensity being obtained when removing, by using the plasma, a deposition film deposited as a result of the plasma etching.

公开(公告)号：US20160284610A1

公开(公告)日：2016-09-29

申请号：US14852189

申请日：2015-09-11

Applicant: Hitachi High-Technologies Corporation

Inventor： Tatehito USUI ,  Kosa HIROTA ,  Satomi INOUE ,  Shigeru NAKAMOTO ,  Kousuke FUKUCHI

IPC: H01L21/66 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L22/20 ,  H01J37/32926 ,  H01J37/32963 ,  H01J37/32972 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/26

Abstract: A plasma processing method of processing layer structure previously formed on an upper surface of a wafer disposed in a processing chamber within a vacuum container and having a layer to be processed and an undercoating layer disposed under the layer by plasma in the processing chamber, includes a step of calculating an etching amount of the layer to be processed at time during processing of any wafer by using result of comparing real pattern data with detection pattern data obtained by combining two patterns of intensity having as parameter wavelength of interference light obtained by processing the layer structure containing three or more undercoating layers having different thickness and the layer to be processed in advance of the processing of the any wafer and areal pattern of intensity having as parameter the wavelength of the interference light obtained during processing of the layer structure on the any wafer.

Abstract translation: 一种处理层结构的等离子体处理方法，其特征在于，预先形成在设置在真空容器内的处理室中的晶片的上表面上并且具有被处理层和底层涂层的处理层结构， 通过将实际图案数据与实际图案数据进行比较的结果来计算在待处理的层处理的层的蚀刻量的步骤，该检测图案数据通过组合通过处理该层获得的干涉光的参数波长的两种强度图案而获得 具有不同厚度的三层或多层底涂层的结构以及处理任何晶片之前要处理的层和具有作为在任何晶片上的层结构的处理期间获得的干涉光的波长的参数的面积图案 。

公开(公告)号：US20190051502A1

公开(公告)日：2019-02-14

申请号：US15892041

申请日：2018-02-08

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ryoji ASAKURA ,  Shota UMEDA ,  Daisuke SHIRAISHI ,  Akira KAGOSHIMA ,  Satomi INOUE

IPC: H01J37/32 ,  H01L21/67 ,  G01J3/443

Abstract: The plasma processing apparatus includes a plasma processing unit that performs plasma processing of a sample and a control unit that controls the plasma processing. The control unit selects one of a plurality of the prediction models for predicting a result of the plasma processing based on a state of the plasma processing unit, and predicts the result of the plasma processing by using a selected prediction model.

公开(公告)号：US20160177449A1

公开(公告)日：2016-06-23

申请号：US14973592

申请日：2015-12-17

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takeshi OHMORI ,  Daisuke SATOU ,  Tatehito USUI ,  Satomi INOUE ,  Kenji MAEDA

IPC: C23C16/513

CPC classification number: H01J37/32917 ,  H01J37/32926 ,  H01J37/32972 ,  H01J37/3299

Abstract: A plasma apparatus of processing a wafer disposed in a processing chamber using plasma includes one window, another window, a light receiving unit, a light source, and an optical branching unit which is disposed between the light source and the other window, branches light emitted by the light source to an optical path toward the processing chamber and an optical path in other direction, and reflects light in the processing chamber from the other window, and a detection unit which detects the light having been emitted from the plasma and received by the light receiving unit using one branched light and other branched and reflected light. The apparatus processes the wafer according to a condition for the processing which is adjusted based on a result of the detection.

Abstract translation: 使用等离子体处理设置在处理室中的晶片的等离子体装置包括设置在光源和另一窗口之间的一个窗口，另一个窗口，光接收单元，光源和光分路单元， 通过光源到朝向处理室的光路和沿另一方向的光路，并且从另一窗口反射处理室中的光;以及检测单元，其检测从等离子体发射的光并由 光接收单元使用一个分支光和其他分支和反射光。 该装置根据基于检测结果调整的处理条件处理晶片。

公开(公告)号：US20140294555A1

公开(公告)日：2014-10-02

申请号：US13975612

申请日：2013-08-26

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Michinori KAWAGUCHI ,  Satomi INOUE ,  Yoshiro SUEMITSU ,  Keita NOGI

IPC: H01L21/677

CPC classification number: H01L21/67745

Abstract: A method for operating a vacuum processing apparatus, the vacuum processing apparatus including: a plurality of cassette stands on which a cassette capable of housing a plurality of wafers therein can be placed; a plurality of vacuum processing vessels each having a processing chamber arranged therein, wherein the wafer is arranged and processed in the processing chamber; and at least one transport robot transporting the wafer on a transport path between either one of the plurality of cassettes and the plurality of vacuum processing vessels, the vacuum processing apparatus sequentially transporting in a predetermined transport order the plurality of wafers from either one of the plurality of cassettes to a predetermined one of the plurality of vacuum processing vessels and processing the plurality of wafers. The method includes a number determining step, a remaining-time determining step and a transport order skip step.

Abstract translation: 一种真空处理装置的操作方法，所述真空处理装置包括：能够放置能够容纳多个晶片的盒的多个盒架; 多个真空处理容器，每个具有布置在其中的处理室，其中所述晶片在所述处理室中被布置和处理; 以及至少一个传送机器人，其将所述晶片传送到所述多个盒中的任一个与所述多个真空处理容器之间的传送路径上，所述真空处理装置以预定的传送顺序依次传送来自所述多个盒中的任一个的多个晶片 将多个真空处理容器中的一个预定的一个放入盒中并处理多个晶片。 该方法包括数字确定步骤，剩余时间确定步骤和传输顺序跳过步骤。