公开(公告)号：US11018014B2

公开(公告)日：2021-05-25

申请号：US15196284

申请日：2016-06-29

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ze Shen ,  Tetsuo Ono ,  Hisao Yasunami

IPC: H01L21/311 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/02

Abstract: A dry etching method for isotropically etching each of SiGe layers selectively relative to each of Si layers in a laminated film is provided. The laminated film can include Si layers and SiGe layers alternately and repeatedly laminated. Each of the SiGe layers can be plasma-etched with plasma generated by a pulse-modulated radio frequency power using NF3 gas.

公开(公告)号：US20160307765A1

公开(公告)日：2016-10-20

申请号：US15196284

申请日：2016-06-29

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ze Shen ,  Tetsuo Ono ,  Hisao Yasunami

IPC: H01L21/3065 ,  H01L21/02

CPC classification number: H01L21/3065 ,  H01J37/32192 ,  H01J37/32201 ,  H01L21/02532

Abstract: A dry etching method for isotropically etching each of SiGe layers selectively relative to each of Si layers in a laminated film is provided. The laminated film can include Si layers and SiGe layers alternately and repeatedly laminated. Each of the SiGe layers can be plasma-etched with plasma generated by a pulse-modulated radio frequency power using NF3 gas.

Abstract translation: 提供了一种用于相对于层叠膜中的每个Si层选择性地各Siige层蚀刻每个SiGe层的干蚀刻方法。 层叠膜可以交替地层叠Si层和SiGe层。 可以使用NF 3气体通过脉冲调制射频功率产生的等离子体等离子体蚀刻每个SiGe层。