公开(公告)号：US3894792A

公开(公告)日：1975-07-15

申请号：US7276170

申请日：1970-09-16

Applicant: HITACHI LTD

Inventor： KOMATSUBARA KIICHI ,  SHIRAKI YASUHIRO ,  YAMADA EIZABURO

IPC: C09K3/00 ,  G02F1/015 ,  G02F1/03 ,  G02F1/05 ,  G02F1/21 ,  G02F1/29 ,  H01L21/00 ,  H01L29/24 ,  H01L31/00 ,  H01L31/14 ,  G02F1/16

CPC classification number: H01L21/00 ,  G02F1/218 ,  G02F1/292 ,  H01L29/242 ,  H01L31/00

Abstract: A pn junction layer is formed in a semiconductor body having a forbidden band the width of which is greater than the photon energy of an irradiated light beam. The pn junction is forwardly biased through transparent electrodes provided on the opposite principal surfaces to inject carriers at a concentration of the order of 1018 to 1022 cm 3. The refractive index of the semiconductor body is varied according to the carrier concentration to arbitrarily deflect the incident light beam.

Abstract translation: pn结层形成在其宽度大于被照射光束的光子能量的禁带的半导体本体中。 pn结通过设置在相对主表面上的透明电极向前偏置，以以1018至1022cm -3的浓度注入载体。 半导体本体的折射率根据载流子浓度而变化以使入射光束任意偏转。