公开(公告)号：US3915767A

公开(公告)日：1975-10-28

申请号：US32979573

申请日：1973-02-05

Applicant: HONEYWELL INC

Inventor： WELLIVER LAWRENCE C

IPC: H01L29/73 ,  H01L21/00 ,  H01L21/225 ,  H01L21/316 ,  H01L21/331 ,  H01L23/485 ,  H01L29/00 ,  H01L29/04 ,  H01L7/34

CPC classification number: H01L29/045 ,  H01L21/00 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/2257 ,  H01L21/31612 ,  H01L23/485 ,  H01L29/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Bipolar transistors having a narrowed base under the emitter regions are disclosed for use in fast responding circuits. The narrow base region under the emitter region is obtained during simultaneous diffusion of both regions. Further steps provide a transistor with a small, heavily doped emitter that is conveniently formed in monolithic integrated circuits.

Abstract translation: 公开了在发射极区域下具有窄基极的双极晶体管用于快速响应电路。 在两个区域的同时扩散期间获得发射极区域下的窄基区。 进一步的步骤提供了具有小的重掺杂发射极的晶体管，其便利地形成在单片集成电路中。