公开(公告)号：US20230343378A1

公开(公告)日：2023-10-26

申请号：US18216435

申请日：2023-06-29

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Liang HE ,  Xin YAN ,  Yafei ZHAO ,  Jiai NING ,  Junfeng ZHAO ,  Wentao TANG

IPC: G11C11/16 ,  H10N50/01 ,  H10N50/10 ,  H10B61/00

CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H10N50/01 ,  G11C11/1697 ,  H10N50/10 ,  H10B61/00

Abstract: Embodiments of this application provide a storage component, a preparation method, a reading/writing method, a storage chip, and an electronic device, is related to the storage technology field, and is used to resolve a problem that a quantity of storage states of a spin orbit torque-magnetic random access memory is increased while a storage state change range remains unchanged. The storage component includes: a first magnetic tunnel junction, a spin orbit coupling layer and a second magnetic tunnel junction that are sequentially arranged in a stacked manner. The first magnetic tunnel junction includes a first free layer, and the second magnetic tunnel junction includes a second free layer. The first free layer and the second free layer are arranged on two opposite surfaces of the spin orbit coupling layer.

公开(公告)号：US20220223784A1

公开(公告)日：2022-07-14

申请号：US17709187

申请日：2022-03-30

Applicant: Huawei Technologies Co., Ltd. ,  Nanjing University

Inventor： Liang HE ,  Pei YANG ,  Yongbing XU ,  Xin YAN ,  Rui ZHANG ,  Xiaolong SHEN

IPC: H01L43/02 ,  H01L43/12

Abstract: Disclosed are a magnetic memory and a magnetic memory preparation method. The magnetic memory includes a heavy metal layer, a metal film layer, and a magnetic tunnel junction (MTJ) layer. The metal film layer is located between the heavy metal layer and the MTJ layer. A spin-orbit coupling effect of a material of the heavy metal layer is stronger than a spin-orbit coupling effect of a material of the metal film layer.