公开(公告)号：US20240322029A1

公开(公告)日：2024-09-26

申请号：US18676360

申请日：2024-05-28

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Bin Hu ,  Min Zhu ,  Huantao Duan

IPC: H01L29/778 ,  H01L23/66 ,  H01L29/20 ,  H01L29/45 ,  H01L29/47 ,  H01L29/66 ,  H03F3/24

CPC classification number: H01L29/7786 ,  H01L23/66 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/475 ,  H01L29/66462 ,  H01L2223/6644 ,  H03F3/245

Abstract: A high electron mobility transistor, a radio frequency transistor, and a preparation method for a high electron mobility transistor, and relates to the field of microelectronics technologies, to resolve a technical problem of poor performance of a high electron mobility transistor with a nitrogen surface. The high electron mobility transistor includes a channel layer, a barrier layer, and a substrate layer. A surface that is of the channel layer and that is in contact with the barrier layer has a two-dimensional electron gas layer. The high electron mobility transistor further includes a source and a drain. The source and the drain are located on the channel layer, and the source and the drain are in ohmic contact with the channel layer. The high electron mobility transistor can implement a low ohmic contact resistance and can be better used in a high frequency and power scenario.