公开(公告)号：US20240130139A1

公开(公告)日：2024-04-18

申请号：US18359823

申请日：2023-07-26

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Zhaozhao Hou ,  Sitong Bu ,  Yichen Fang ,  Yu Zhang ,  JEFFREY JUNHAO XU

IPC: H10B53/30 ,  G11C11/22

CPC classification number: H10B53/30 ,  G11C11/221 ,  G11C11/2273 ,  G11C11/2275

Abstract: A ferroelectric memory includes at least one storage cell. Each storage cell includes a transistor, a first ferroelectric capacitor, and at least one voltage divider capacitor. The transistor includes a gate electrode, a source electrode, and a drain electrode. One electrode of the first ferroelectric capacitor is connected to the gate electrode. The other electrode of the first ferroelectric capacitor is connected to a word line. One electrode of each voltage divider capacitor in the at least one voltage divider capacitor is connected to the gate electrode, and the other electrode of each voltage divider capacitor in the at least one voltage divider capacitor is connected to the source electrode.