公开(公告)号：US20230170908A1

公开(公告)日：2023-06-01

申请号：US17794620

申请日：2021-07-05

Applicant: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Xingsheng WANG ,  Yujie SONG ,  Qiwen WU ,  Xiangshui MIAO

IPC: H03K19/1776 ,  G11C13/00

CPC classification number: H03K19/1776 ,  G11C13/004 ,  G11C13/0069 ,  H03K19/21

Abstract: A non-volatile Boolean logic circuit based on memristors and an operation method, which performs logic operations on the input logic value P and/or the input logic value Q. The logic circuit includes: a controller, a memristor M1, a memristor M2 and a resistor. The controller sets the memristor M2 to a high resistance state before performing the logic operation. When performing the logic operation, a voltage A is applied to the memristor M1, a voltage B is applied to the memristor M2, a voltage C is applied to the resistor. The resistance state of the memristor M2 is the result of the logic operation. When a logic operation is performed on the logic value P and the logic value Q or only on the logic value Q, the controller further sets the memristor M1 to the resistance state corresponding to the logic value Q before performing the logic operation.