公开(公告)号：US12224341B2

公开(公告)日：2025-02-11

申请号：US17400345

申请日：2021-08-12

Applicant: Hyundai Motor Company ,  Kia Corporation

Inventor： NackYong Joo

IPC: H01L29/78 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device according to an embodiment of the present disclosure includes: a conductive region, an end region positioned at a portion where the conductive region ends, and a connection region positioned between the conductive region and the end region. The conductive region includes: an n+ type substrate; an n− type layer positioned at the first surface of the n+ type substrate; and a p type region positioned on the n− type layer, and a gate electrode that fills an inside of a trench penetrating the p type region and positioned in the n− type layer, and a side wall of the trench positioned at the portion where the conductive region ends is inclined.

公开(公告)号：US11837636B2

公开(公告)日：2023-12-05

申请号：US17544193

申请日：2021-12-07

Applicant: Hyundai Motor Company ,  Kia Corporation

Inventor： Dae Hwan Chun ,  Junghee Park ,  Jungyeop Hong ,  Youngkyun Jung ,  NackYong Joo

IPC: H01L21/02 ,  H01L29/267 ,  H01L29/06 ,  H01L29/786

CPC classification number: H01L29/267 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02494 ,  H01L29/06 ,  H01L29/7869

Abstract: An embodiment semiconductor module includes a substrate, a heterogeneous thin film including a first semiconductor layer disposed on a first region of the substrate and a second semiconductor layer disposed on a second region of the substrate, a first semiconductor device disposed on the first semiconductor layer of the heterogeneous thin film, and a second semiconductor device disposed on the second semiconductor layer of the heterogeneous thin film, wherein one of the first semiconductor layer or the second semiconductor layer comprises gallium oxide (Ga2O3) and the other includes silicon (Si).

公开(公告)号：US20230045172A1

公开(公告)日：2023-02-09

申请号：US17663866

申请日：2022-05-18

Applicant: Hyundai Motor Company ,  Kia Corporation

Inventor： NackYong Joo ,  Dae Hwan Chun ,  Jungyeop Hong ,  Youngkyun Jung ,  Junghee Park

IPC: H01L29/739 ,  H01L29/16 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device includes an N+ type substrate, an N− type layer disposed on a first surface of the N+ type substrate and having a trench opened to a surface opposite to the surface facing the N+ type substrate, a P type region disposed in the N− type layer and disposed on a side surface of the trench, a gate electrode disposed in the trench, and a source electrode and a drain electrode insulated from the gate electrode. The N− type layer includes a P type shield region covering a bottom surface and an edge of the trench.

公开(公告)号：US20220285485A1

公开(公告)日：2022-09-08

申请号：US17317576

申请日：2021-05-11

Applicant: HYUNDAI MOTOR COMPANY ,  KIA CORPORATION

Inventor： Dae Hwan Chun ,  Junghee Park ,  Jungyeop Hong ,  Youngkyun Jung ,  NackYong Joo

IPC: H01L29/06 ,  H01L29/872 ,  H01L29/66

Abstract: A Schottky barrier diode is provided. The Schottky barrier diode includes: an n+ type of substrate, an n− type of epitaxy layer disposed on a first surface of the n+ type of substrate and having a trench opened to an opposite side of a surface facing the substrate, a p type of region disposed on a side surface of the trench, a Schottky electrode disposed on the n− type of epitaxy layer and within the trench, and an ohmic electrode disposed on a second surface of the n+ type of substrate.

公开(公告)号：US12262546B2

公开(公告)日：2025-03-25

申请号：US17835367

申请日：2022-06-08

Applicant: HYUNDAI MOTOR COMPANY ,  KIA CORPORATION

Inventor： NackYong Joo ,  Dae Hwan Chun ,  Jungyeop Hong ,  Youngkyun Jung ,  Junghee Park

IPC: H10D12/00 ,  H02M1/088 ,  H02M7/537 ,  H10D62/17 ,  H10D64/23

Abstract: Provided is a semiconductor device including a semiconductor substrate, a plurality of gate electrodes disposed on the upper surface portion of the semiconductor substrate and spaced apart from each other, a plurality of emitter electrodes disposed to be overlapped with each of the plurality of gate electrodes, and a collector electrode disposed on the lower surface of the semiconductor substrate.

公开(公告)号：US12027517B2

公开(公告)日：2024-07-02

申请号：US17569040

申请日：2022-01-05

Applicant: HYUNDAI MOTOR COMPANY ,  KIA CORPORATION

Inventor： Jungyeop Hong ,  Dae Hwan Chun ,  NackYong Joo ,  Youngkyun Jung ,  Junghee Park

IPC: H01L27/06 ,  H01L21/82 ,  H01L21/8258 ,  H01L29/24

CPC classification number: H01L27/0688 ,  H01L21/8258 ,  H01L29/24

Abstract: Disclosed is a semiconductor module including a substrate, a first semiconductor layer positioned on the substrate, an insulator positioned in a partial region on the first semiconductor layer, a second semiconductor layer positioned on the insulator, a first semiconductor device formed on the first semiconductor layer, and a second semiconductor device formed on the second semiconductor layer, wherein one of the first semiconductor layer and the second semiconductor layer includes gallium oxide (Ga2O3) and the other includes silicon (Si).

公开(公告)号：US20220173241A1

公开(公告)日：2022-06-02

申请号：US17400345

申请日：2021-08-12

Applicant: Hyundai Motor Company ,  Kia Corporation

Inventor： NackYong Joo

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/417 ,  H01L29/66

Abstract: A semiconductor device according to an embodiment of the present disclosure includes: a conductive region, an end region positioned at a portion where the conductive region ends, and a connection region positioned between the conductive region and the end region. The conductive region includes: an n+ type substrate; an n− type layer positioned at the first surface of the n+ type substrate; and a p type region positioned on the n− type layer, and a gate electrode that fills an inside of a trench penetrating the p type region and positioned in the n− type layer, and a side wall of the trench positioned at the portion where the conductive region ends is inclined.

公开(公告)号：US20190123171A1

公开(公告)日：2019-04-25

申请号：US15823856

申请日：2017-11-28

Applicant: Hyundai Motor Company ,  Kia Motors Corporation

Inventor： Youngkyun Jung ,  NackYong Joo ,  Junghee Park ,  Hyun Woo Noh ,  JongSeok Lee ,  Dae Hwan Chun

IPC: H01L29/66 ,  H01L29/423 ,  H01L21/3065 ,  H01L21/308

Abstract: A manufacturing method of a semiconductor device is provided. The method includes sequentially forming an n− type of layer, a p type of region, and an n+ type of region on a first surface of a substrate, forming a preliminary trench in the n− type of layer by a first etching process and forming a preliminary gate insulating layer by a first thermal oxidation process. The method includes etching the lower surface of the preliminary trench and the preliminary second portion to form a trench by a second etching process and forming a gate insulating layer in the trench by a second thermal oxidation process. The gate insulating layer includes a first and second portion. The preliminary first portion is thicker than the preliminary second portion and the first portion. The first portion thickness is equal to the thickness of the second portion.

公开(公告)号：US10164020B2

公开(公告)日：2018-12-25

申请号：US15632077

申请日：2017-06-23

Applicant: Hyundai Motor Company ,  Kia Motors Corporation

Inventor： Dae Hwan Chun ,  NackYong Joo

IPC: H01L29/78 ,  H01L51/10 ,  H01L29/16 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device may include an n− type layer disposed at a first surface of an n+ type silicon carbide substrate; a p− type region, a p type region, an n+ type region, and a p+ type region disposed at an upper portion in the n− type layer; a gate electrode and a source electrode disposed on the n− type layer and insulated from each other; and a drain electrode disposed at a second surface of the n+ type silicon carbide substrate, wherein the source electrode is in contact with the p− type region, the n+ type region, and the p+ type region, and the source electrode may include an ohmic junction region disposed at a contact portion of the source electrode and the n+ type region and the contact portion of the source region and the p+ type region and a Schottky junction region disposed at the contact portion of the source electrode and the p− type region.

公开(公告)号：US12230697B2

公开(公告)日：2025-02-18

申请号：US17663866

申请日：2022-05-18

Applicant: Hyundai Motor Company ,  Kia Corporation

Inventor： NackYong Joo ,  Dae Hwan Chun ,  Jungyeop Hong ,  Youngkyun Jung ,  Junghee Park

IPC: H01L29/739 ,  H01L29/16 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device includes an N+ type substrate, an N− type layer disposed on a first surface of the N+ type substrate and having a trench opened to a surface opposite to the surface facing the N+ type substrate, a P type region disposed in the N− type layer and disposed on a side surface of the trench, a gate electrode disposed in the trench, and a source electrode and a drain electrode insulated from the gate electrode. The N− type layer includes a P type shield region covering a bottom surface and an edge of the trench.