公开(公告)号：US12224341B2

公开(公告)日：2025-02-11

申请号：US17400345

申请日：2021-08-12

Applicant: Hyundai Motor Company ,  Kia Corporation

Inventor： NackYong Joo

IPC: H01L29/78 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device according to an embodiment of the present disclosure includes: a conductive region, an end region positioned at a portion where the conductive region ends, and a connection region positioned between the conductive region and the end region. The conductive region includes: an n+ type substrate; an n− type layer positioned at the first surface of the n+ type substrate; and a p type region positioned on the n− type layer, and a gate electrode that fills an inside of a trench penetrating the p type region and positioned in the n− type layer, and a side wall of the trench positioned at the portion where the conductive region ends is inclined.

公开(公告)号：US11837636B2

公开(公告)日：2023-12-05

申请号：US17544193

申请日：2021-12-07

Applicant: Hyundai Motor Company ,  Kia Corporation

Inventor： Dae Hwan Chun ,  Junghee Park ,  Jungyeop Hong ,  Youngkyun Jung ,  NackYong Joo

IPC: H01L21/02 ,  H01L29/267 ,  H01L29/06 ,  H01L29/786

CPC classification number: H01L29/267 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02494 ,  H01L29/06 ,  H01L29/7869

Abstract: An embodiment semiconductor module includes a substrate, a heterogeneous thin film including a first semiconductor layer disposed on a first region of the substrate and a second semiconductor layer disposed on a second region of the substrate, a first semiconductor device disposed on the first semiconductor layer of the heterogeneous thin film, and a second semiconductor device disposed on the second semiconductor layer of the heterogeneous thin film, wherein one of the first semiconductor layer or the second semiconductor layer comprises gallium oxide (Ga2O3) and the other includes silicon (Si).

公开(公告)号：US20230045172A1

公开(公告)日：2023-02-09

申请号：US17663866

申请日：2022-05-18

Applicant: Hyundai Motor Company ,  Kia Corporation

Inventor： NackYong Joo ,  Dae Hwan Chun ,  Jungyeop Hong ,  Youngkyun Jung ,  Junghee Park

IPC: H01L29/739 ,  H01L29/16 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device includes an N+ type substrate, an N− type layer disposed on a first surface of the N+ type substrate and having a trench opened to a surface opposite to the surface facing the N+ type substrate, a P type region disposed in the N− type layer and disposed on a side surface of the trench, a gate electrode disposed in the trench, and a source electrode and a drain electrode insulated from the gate electrode. The N− type layer includes a P type shield region covering a bottom surface and an edge of the trench.

公开(公告)号：US20220285485A1

公开(公告)日：2022-09-08

申请号：US17317576

申请日：2021-05-11

Applicant: HYUNDAI MOTOR COMPANY ,  KIA CORPORATION

Inventor： Dae Hwan Chun ,  Junghee Park ,  Jungyeop Hong ,  Youngkyun Jung ,  NackYong Joo

IPC: H01L29/06 ,  H01L29/872 ,  H01L29/66

Abstract: A Schottky barrier diode is provided. The Schottky barrier diode includes: an n+ type of substrate, an n− type of epitaxy layer disposed on a first surface of the n+ type of substrate and having a trench opened to an opposite side of a surface facing the substrate, a p type of region disposed on a side surface of the trench, a Schottky electrode disposed on the n− type of epitaxy layer and within the trench, and an ohmic electrode disposed on a second surface of the n+ type of substrate.

公开(公告)号：US12262546B2

公开(公告)日：2025-03-25

申请号：US17835367

申请日：2022-06-08

Applicant: HYUNDAI MOTOR COMPANY ,  KIA CORPORATION

Inventor： NackYong Joo ,  Dae Hwan Chun ,  Jungyeop Hong ,  Youngkyun Jung ,  Junghee Park

IPC: H10D12/00 ,  H02M1/088 ,  H02M7/537 ,  H10D62/17 ,  H10D64/23

Abstract: Provided is a semiconductor device including a semiconductor substrate, a plurality of gate electrodes disposed on the upper surface portion of the semiconductor substrate and spaced apart from each other, a plurality of emitter electrodes disposed to be overlapped with each of the plurality of gate electrodes, and a collector electrode disposed on the lower surface of the semiconductor substrate.

公开(公告)号：US12027517B2

公开(公告)日：2024-07-02

申请号：US17569040

申请日：2022-01-05

Applicant: HYUNDAI MOTOR COMPANY ,  KIA CORPORATION

Inventor： Jungyeop Hong ,  Dae Hwan Chun ,  NackYong Joo ,  Youngkyun Jung ,  Junghee Park

IPC: H01L27/06 ,  H01L21/82 ,  H01L21/8258 ,  H01L29/24

CPC classification number: H01L27/0688 ,  H01L21/8258 ,  H01L29/24

Abstract: Disclosed is a semiconductor module including a substrate, a first semiconductor layer positioned on the substrate, an insulator positioned in a partial region on the first semiconductor layer, a second semiconductor layer positioned on the insulator, a first semiconductor device formed on the first semiconductor layer, and a second semiconductor device formed on the second semiconductor layer, wherein one of the first semiconductor layer and the second semiconductor layer includes gallium oxide (Ga2O3) and the other includes silicon (Si).

公开(公告)号：US20220173241A1

公开(公告)日：2022-06-02

申请号：US17400345

申请日：2021-08-12

Applicant: Hyundai Motor Company ,  Kia Corporation

Inventor： NackYong Joo

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/417 ,  H01L29/66

Abstract: A semiconductor device according to an embodiment of the present disclosure includes: a conductive region, an end region positioned at a portion where the conductive region ends, and a connection region positioned between the conductive region and the end region. The conductive region includes: an n+ type substrate; an n− type layer positioned at the first surface of the n+ type substrate; and a p type region positioned on the n− type layer, and a gate electrode that fills an inside of a trench penetrating the p type region and positioned in the n− type layer, and a side wall of the trench positioned at the portion where the conductive region ends is inclined.

公开(公告)号：US12230697B2

公开(公告)日：2025-02-18

申请号：US17663866

申请日：2022-05-18

Applicant: Hyundai Motor Company ,  Kia Corporation

Inventor： NackYong Joo ,  Dae Hwan Chun ,  Jungyeop Hong ,  Youngkyun Jung ,  Junghee Park

IPC: H01L29/739 ,  H01L29/16 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device includes an N+ type substrate, an N− type layer disposed on a first surface of the N+ type substrate and having a trench opened to a surface opposite to the surface facing the N+ type substrate, a P type region disposed in the N− type layer and disposed on a side surface of the trench, a gate electrode disposed in the trench, and a source electrode and a drain electrode insulated from the gate electrode. The N− type layer includes a P type shield region covering a bottom surface and an edge of the trench.

公开(公告)号：US20250022950A1

公开(公告)日：2025-01-16

申请号：US18524202

申请日：2023-11-30

Applicant: Hyundai Motor Company ,  Kia Corporation

Inventor： Junghee Park ,  Dae Hwan Chun ,  Jungyeop Hong ,  Youngkyun Jung ,  NackYong Joo

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/16 ,  H01L29/40 ,  H01L29/66

Abstract: An embodiment semiconductor device includes a conductive region extending in a first direction and a second direction intersecting the first direction and stacked in a third direction intersecting the first direction and the second direction and a termination region at an end of the conductive region in the first direction, wherein the termination region includes an n+ type substrate, an n− type layer disposed on an upper surface of the n+ type substrate and having a plurality of first trenches opening upward in the third direction, and a lower gate runner covering the plurality of first trenches and disposed on an upper surface of the n− type layer.

公开(公告)号：US20250022917A1

公开(公告)日：2025-01-16

申请号：US18524544

申请日：2023-11-30

Applicant: Hyundai Motor Company ,  Kia Corporation

Inventor： NackYong Joo ,  Dae Hwan Chun ,  Jungyeop Hong ,  Taehyun Kim ,  Youngkyun Jung ,  Junghee Park

IPC: H01L29/08 ,  H01L21/04 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

Abstract: An embodiment semiconductor device includes an N− type layer having a trench therein, a P type region within the N− type layer, an N+ type region within the P type region, a gate electrode within the trench including a first gate electrode having an upper surface lower than an upper surface of the P type region and a second gate electrode having an upper surface lower than the upper surface of the first gate electrode, and source and drain electrodes insulated from the gate electrode, wherein the N+ type region includes a first N+ type region on a side of the first gate electrode and having a lower surface lower than the upper surface of the first gate electrode and a second N+ type region on a side of the second gate electrode and having a lower surface lower than the lower surface of the first N+ type region.