利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

2 条记录 (耗时 0.023 秒)

    SEMICONDUCTOR DEVICES INCLUDING A VERTICAL CHANNEL TRANSISTOR AND METHODS OF FABRICATING THE SAME
    1.
    发明申请
    SEMICONDUCTOR DEVICES INCLUDING A VERTICAL CHANNEL TRANSISTOR AND METHODS OF FABRICATING THE SAME 有权
    包括垂直通道晶体管的半导体器件及其制造方法

    公开(公告)号：US20130043525A1

    公开(公告)日：2013-02-21

    申请号：US13588513

    申请日：2012-08-17

    申请人： Hak-soo YU ,  Chulwoo PARK ,  Hyun-Woo CHUNG ,  Sua KIM ,  Hyunho CHOI ,  Hongsun HWANG

    发明人： Hak-soo YU ,  Chulwoo PARK ,  Hyun-Woo CHUNG ,  Sua KIM ,  Hyunho CHOI ,  Hongsun HWANG

    IPC分类号： H01L29/78

    CPC分类号： H01L27/10823 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10885

    摘要： According to example embodiments, a semiconductor device includes a plurality of active pillars protruding from a substrate. Each active pillar includes a channel region between upper and lower doped regions. A contact gate electrode faces the channel region and is connected to a word line. The word line extends in a first direction. A bit line is connected to the lower doped region and extends in a second direction. The semiconductor device further includes a string body connection portion that connects the channel region of at least two adjacent active pillars of the plurality of active pillars.

    摘要翻译： 根据示例性实施例，半导体器件包括从衬底突出的多个有源柱。 每个有源支柱包括上和下掺杂区之间的沟道区。 接触栅电极面对沟道区并连接到字线。 字线在第一方向延伸。 位线连接到下掺杂区域并沿第二方向延伸。 该半导体器件还包括连接多个有源支柱的至少两个相邻有效支柱的沟道区域的串体连接部分。

    USER DEVICE HAVING NONVOLATILE RANDOM ACCESS MEMORY AND METHOD OF BOOTING THE SAME
    2.
    发明申请
    USER DEVICE HAVING NONVOLATILE RANDOM ACCESS MEMORY AND METHOD OF BOOTING THE SAME 审中-公开
    具有非易失性随机存取存储器的用户设备及其制造方法

    公开(公告)号：US20140013036A1

    公开(公告)日：2014-01-09

    申请号：US13915665

    申请日：2013-06-12

    申请人： Oh-Seong KWON ,  Chulwoo PARK ,  Yunsang LEE

    发明人： Oh-Seong KWON ,  Chulwoo PARK ,  Yunsang LEE

    IPC分类号： G11C11/406 ,  G06F12/02 ,  G06F9/44

    CPC分类号： G11C11/40615 ,  G06F9/4401 ,  G06F12/0246 ,  G11C5/04 ,  G11C16/3418 ,  G11C2211/4061

    摘要： Disclosed is a method of booting a user device including a nonvolatile random access memory (RAM) and a mode register. The method includes reading a Basic Input/Output System (BIOS) refresh setting during a booting operation, and setting the mode register to a refresh timing mode of the nonvolatile RAM according to the BIOS refresh setting. The refresh timing mode selectively includes a refresh inactivation mode for inactivating a refresh operation of the nonvolatile RAM or a refresh execution mode of multiple refresh execution modes having corresponding different refresh periods for activating the refresh operation of the nonvolatile RAM.

    摘要翻译： 公开了一种引导包括非易失性随机存取存储器（RAM）和模式寄存器的用户设备的方法。 该方法包括在引导操作期间读取基本输入/输出系统（BIOS）刷新设置，并根据BIOS刷新设置将模式寄存器设置为非易失性RAM的刷新定时模式。 刷新定时模式选择性地包括用于停止非易失性RAM的刷新操作的刷新失活模式或具有用于激活非易失性RAM的刷新操作的相应不同刷新周期的多个刷新执行模式的刷新执行模式。