公开(公告)号：US08831062B2

公开(公告)日：2014-09-09

申请号：US13639833

申请日：2011-04-06

申请人： Hans-Ulrich Pfeiffer ,  Andrew Cannon Carter ,  Jörg Troger ,  Norbert Lichtenstein ,  Michael Schwarz ,  Abram Jakubowicz ,  Boris Sverdlov

发明人： Hans-Ulrich Pfeiffer ,  Andrew Cannon Carter ,  Jörg Troger ,  Norbert Lichtenstein ,  Michael Schwarz ,  Abram Jakubowicz ,  Boris Sverdlov

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/22 ,  H01S5/20 ,  H01S5/10 ,  H01S5/16

CPC分类号： H01S5/0425 ,  H01S5/0014 ,  H01S5/1039 ,  H01S5/1053 ,  H01S5/1064 ,  H01S5/16 ,  H01S5/2004 ,  H01S5/22

摘要： A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallization layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallization layer opposite to the n-metallization layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallization layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallization layer is larger than a width of the active region. This arrangement results in substantially uniform current distribution near the front end of the active region. Advantageously, this uniform current density significantly improves the reliability of the laser diode.

摘要翻译： 半导体激光二极管包括在半导体本体内具有n区和横向间隔开的p区的半导体本体。 激光二极管在n区域和p区域之间设置有有源区域，其具有前端部分和后端部分，邻近n区域的n-金属化层，并且具有用于将电流注入到第一注入器中的第一注入器 有源区和与n金属化层相对并且邻近p区的p金属化层，并且具有用于将电流注入到有源区中的第二注入器。 选择至少一个金属化层的厚度和/或宽度，以便与有源区域的另一部分中的电流注入相比，控制有源区域的至少一端附近的有源区域的一部分中的电流注入。 至少一个金属化层的宽度大于有源区的宽度。 这种布置导致在有源区域的前端附近的电流分布基本均匀。 有利地，这种均匀的电流密度显着提高了激光二极管的可靠性。

公开(公告)号：US20130070800A1

公开(公告)日：2013-03-21

申请号：US13639833

申请日：2011-04-06

申请人： Hans-Ulrich Pfeiffer ,  Andrew Cannon Carter ,  Jörg Troger ,  Norbert Lichtenstein ,  Michael Schwarz ,  Abram Jakubowicz ,  Boris Sverdlov

发明人： Hans-Ulrich Pfeiffer ,  Andrew Cannon Carter ,  Jörg Troger ,  Norbert Lichtenstein ,  Michael Schwarz ,  Abram Jakubowicz ,  Boris Sverdlov

IPC分类号： H01S5/40 ,  H01L21/28

CPC分类号： H01S5/0425 ,  H01S5/0014 ,  H01S5/1039 ,  H01S5/1053 ,  H01S5/1064 ,  H01S5/16 ,  H01S5/2004 ,  H01S5/22

摘要： A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallisation layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallisation layer opposite to the n-metallisation layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallisation layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallisation layer is larger than a width of the active region. This arrangement results in substantially uniform current distribution near the front end of the active region. Advantageously, this uniform current density significantly improves the reliability of the laser diode.

摘要翻译： 半导体激光二极管包括在半导体本体内具有n区和横向间隔开的p区的半导体本体。 激光二极管在n区和p区之间设置有一有源区，该区具有一前端和一后端段，n-金属化层位于邻近该n-区并具有用于将电流注入 有源区和与n金属化层相对并且邻近p区的p金属化层，并且具有用于将电流注入到有源区中的第二注入器。 选择至少一个金属化层的厚度和/或宽度，以便与有源区域的另一部分中的电流注入相比，控制有源区域的至少一端附近的有源区域的一部分中的电流注入。 至少一个金属化层的宽度大于有源区的宽度。 这种布置导致在有源区域的前端附近的电流分布基本均匀。 有利地，这种均匀的电流密度显着提高了激光二极管的可靠性。