公开(公告)号：US06873164B2

公开(公告)日：2005-03-29

申请号：US09935585

申请日：2001-08-24

申请人： Haruo Shindo ,  Takayuki Fukasawa

发明人： Haruo Shindo ,  Takayuki Fukasawa

IPC分类号： H05H1/00 ,  G01R29/24 ,  G01R31/302 ,  G01N27/62

CPC分类号： G01R29/24

摘要： A method of an electron energy distribution in a plasma region generated by high-frequency power. In the method, a heating probe is inserted into the plasma region and heated by a current flowing into the plasma region. A pulse voltage having a sufficient shorter period than a thermal time constant of the heating probe is applied to the probe, which emits thermions. The number of the thermions emitted sufficiently increases. The plasma vibration frequency of the emitted thermions is sufficiently higher than the frequency of the high-frequency power. The floating potential of the heating probe therefore follows the high frequency potential existing in the plasma. The floating potential difference between a voltage period of the pulse voltage and a no-voltage period is detected, and an the electron energy distribution in the plasma region is thereby determined.

摘要翻译： 通过高频功率产生的等离子体区域中的电子能量分布的方法。 在该方法中，将加热探针插入到等离子体区域中，并通过流入等离子体区域的电流进行加热。 将具有比加热探针的热时间常数足够短的周期的脉冲电压施加到发射热量的探针。 发射的热量数量足够增加。 发射的热离子的等离子体振动频率足够高于高频功率的频率。 因此，加热探头的浮动电位遵循等离子体中存在的高频电位。 检测脉冲电压的电压周期和无电压周期之间的浮动电位差，由此确定等离子体区域中的电子能量分布。

公开(公告)号：US08404602B2

公开(公告)日：2013-03-26

申请号：US13085215

申请日：2011-04-12

申请人： Shuji Takahashi ,  Haruo Shindo

发明人： Shuji Takahashi ,  Haruo Shindo

IPC分类号： H01L21/469

CPC分类号： H01L21/02164 ,  H01L21/02238

摘要： A plasma oxidation method includes the steps of: generating oxygen-containing plasma with a process gas containing oxygen; applying a bias voltage to a substrate placed on a stage; and radiating positive ions and negative ions in the oxygen-containing plasma onto the substrate so as to perform plasma oxidation of the substrate while controlling a bias potential of the substrate in such a manner that a maximum value Vmax and a minimum value Vmin of the bias potential and a plasma potential Vp satisfy a following relationship: Vmin

摘要翻译： 等离子体氧化法包括以下步骤：用含有氧气的工艺气体产生含氧等离子体; 对放置在台架上的基板施加偏置电压; 并且将含氧等离子体中的正离子和负离子放射到衬底上，以便在以如下方式控制衬底的等离子体氧化的同时控制衬底的偏置电位：偏压的最大值Vmax和最小值Vmin 电位和等离子体电位Vp满足以下关系：Vmin

公开(公告)号：US06511575B1

公开(公告)日：2003-01-28

申请号：US09437336

申请日：1999-11-10

申请人： Haruo Shindo ,  Hideo Kitagawa ,  Masakazu Furukawa

发明人： Haruo Shindo ,  Hideo Kitagawa ,  Masakazu Furukawa

IPC分类号： H05H100

CPC分类号： H01L21/76843 ,  B08B7/0035 ,  C23C16/0227 ,  H01J37/32357 ,  H01L21/28518 ,  H01L21/67069 ,  H01L21/76814 ,  H01L21/76838 ,  H01L21/76862

摘要： In order to eliminate a contact hole of a semiconductor substrate, a polymer dreg after ashing of all inside of a via hole is conducted, or an oxide layer on a barrier metal surface, hydrogen gas is changed to a hydrogen radical, the radical is primarily changed to a negative hydrogen ion, and the ion is introduced onto a wafer arranged in a vacuum container. In this manner, cleaning is done by assisting a negative hydrogen ion having its less generated secondary electrons without imparting plasma damage to an element.

摘要翻译： 为了消除半导体衬底的接触孔，在通孔全部内部进行灰化后的聚合物渣滓或阻挡金属表面上的氧化物层，氢气变为氢原子，基团主要 变成负的氢离子，将离子引入布置在真空容器中的晶片上。 以这种方式，通过辅助具有较少产生的二次电子的负氢离子而不对元件施加等离子体损伤来进行清洁。