公开(公告)号：US07402801B2

公开(公告)日：2008-07-22

申请号：US10907678

申请日：2005-04-12

申请人： Henry Huang ,  YongSeng Tan

发明人： Henry Huang ,  YongSeng Tan

IPC分类号： H01L21/00

CPC分类号： G01N23/2251

摘要： An inspecting method comprises the following steps. A plurality of defect inspection devices is formed on a wafer. Each defect inspection device comprises an insulating layer and a conductive layer stacked over the insulating layer. A defect inspection parameter is set and the wafer is scanned with an electron beam to obtain a plurality of defect signals. The number of defect signals is checked to determine if it is equal to the number of defect inspection devices. If the number of defect signals is smaller than the number of defect inspection devices, the defect inspection parameter is readjusted and the aforementioned step of performing an electron beam scanning and checking for equality between the number of defect signals and the number of defect inspection devices are repeated. The process is complete when the number of defect signals is at least equal to the number of defect inspection devices.

摘要翻译： 检查方法包括以下步骤。 在晶片上形成多个缺陷检查装置。 每个缺陷检查装置包括绝缘层和层叠在绝缘层上的导电层。 设置缺陷检查参数，并用电子束扫描晶片以获得多个缺陷信号。 检查缺陷信号的数量以确定其是否等于缺陷检查装置的数量。 如果缺陷信号的数量小于缺陷检查装置的数量，则重新调整缺陷检查参数，进行电子束扫描的检查和缺陷信号的数量与缺陷检查装置的数量的相等的上述步骤是 重复。 当缺陷信号的数量至少等于缺陷检查装置的数量时，该过程完成。

公开(公告)号：US20060226356A1

公开(公告)日：2006-10-12

申请号：US10907678

申请日：2005-04-12

申请人： Henry Huang ,  YongSeng Tan

发明人： Henry Huang ,  YongSeng Tan

IPC分类号： G01N23/00

CPC分类号： G01N23/2251

摘要： An inspecting method comprises the following steps. A plurality of defect inspection devices is formed on a wafer. Each defect inspection device comprises an insulating layer and a conductive layer stacked over the insulating layer. A defect inspection parameter is set and the wafer is scanned with an electron beam to obtain a plurality of defect signals. The number of defect signals is checked to determine if it is equal to the number of defect inspection devices. If the number of defect signals is smaller than the number of defect inspection devices, the defect inspection parameter is readjusted and the aforementioned step of performing an electron beam scanning and checking for equality between the number of defect signals and the number of defect inspection devices are repeated. The process is complete when the number of defect signals is at least equal to the number of defect inspection devices.

摘要翻译： 检查方法包括以下步骤。 在晶片上形成多个缺陷检查装置。 每个缺陷检查装置包括绝缘层和层叠在绝缘层上的导电层。 设置缺陷检查参数，并用电子束扫描晶片以获得多个缺陷信号。 检查缺陷信号的数量以确定其是否等于缺陷检查装置的数量。 如果缺陷信号的数量小于缺陷检查装置的数量，则重新调整缺陷检查参数，进行电子束扫描的检查和缺陷信号的数量与缺陷检查装置的数量的相等的上述步骤是 重复。 当缺陷信号的数量至少等于缺陷检查装置的数量时，该过程完成。

公开(公告)号：US20130191493A1

公开(公告)日：2013-07-25

申请号：US13355397

申请日：2012-01-20

申请人： Robert Le ,  Timothy Bean ,  Henry Huang

发明人： Robert Le ,  Timothy Bean ,  Henry Huang

IPC分类号： G06F15/16 ,  G06F11/30

CPC分类号： H04L51/12 ,  G06F11/30 ,  H04L41/28 ,  H04L63/302 ,  H04L63/306 ,  H04L2012/5685 ,  H04W12/02

摘要： A system, method, and apparatus for collecting data streams, such as data packets, on a network, such as the Internet, are disclosed. Evaluation of the metadata and the relationships can be performed algorithmically, as predetermined by an analyst or as provided as preset options by the network monitoring system (NMS). The collected data associated with the users of the network may be accessed by multiple analysts belonging to different groups having a NMS of their own. The system may allow access to multiple analysts belonging to separate groups by parsing through a single instance of the stored data. Multiple analysts belonging to different groups may allow to access to a single instance of the stored data.

摘要翻译： 公开了一种用于在诸如因特网的网络上收集诸如数据分组之类的数据流的系统，方法和装置。 元数据和关系的评估可以由分析人员预先确定或由网络监控系统（NMS）提供的预设选项进行算法执行。 与网络用户相关联的收集的数据可以由属于具有自己的NMS的不同组的多个分析者访问。 系统可以通过解析存储的数据的单个实例来允许访问属于单独组的多个分析人员。 属于不同组的多个分析人员可能允许访问存储数据的单个实例。

公开(公告)号：US20110080782A1

公开(公告)日：2011-04-07

申请号：US12967743

申请日：2010-12-14

申请人： Hai Li ,  Yiran Chen ,  Harry Hongyue Liu ,  Henry Huang ,  Ran Wang

发明人： Hai Li ,  Yiran Chen ,  Harry Hongyue Liu ,  Henry Huang ,  Ran Wang

IPC分类号： G11C11/15

CPC分类号： G11C8/08 ,  G11C11/1659 ,  G11C11/1675 ,  G11C13/0028 ,  G11C13/0069 ,  G11C2013/0071

摘要： Apparatus and method for write current compensation in a non-volatile memory cell, such as but not limited to spin-torque transfer random access memory (STRAM) or resistive random access memory (RRAM). In accordance with some embodiments, a non-volatile memory cell has a resistive sense element (RSE) coupled to a switching device, the RSE having a hard programming direction and an easy programming direction opposite the hard programming direction. A voltage boosting circuit includes a capacitor which adds charge to a nominal non-zero voltage supplied by a voltage source to a node to generate a temporarily boosted voltage. The boosted voltage is applied to the switching device when the RSE is programmed in the hard programming direction.

公开(公告)号：US20100110761A1

公开(公告)日：2010-05-06

申请号：US12398256

申请日：2009-03-05

申请人： Yiran Chen ,  Hai Li ,  Wenzhong Zhu ,  Xiaobin Wang ,  Henry Huang ,  Hongyue Liu

发明人： Yiran Chen ,  Hai Li ,  Wenzhong Zhu ,  Xiaobin Wang ,  Henry Huang ,  Hongyue Liu

IPC分类号： G11C11/00

CPC分类号： G11C5/025 ,  G11C11/1653 ,  G11C11/1673

摘要： The present disclosure relates to methods of selectively placing a reference column or reference row in a memory array. The method includes measuring a resistance state resistance value for a plurality of variable resistive memory cells within a memory array and mapping a location of each measured variable resistive memory cell to form a map of the resistance state resistance values for a plurality of variable resistive memory cells within a memory array. Then a column or row is selected to be a reference column or reference row based on the map of the resistance state resistance value for a plurality of variable resistive memory cells within a memory array, to minimize read operation errors, and forming a variable resistive memory cell memory array.

摘要翻译： 本公开涉及将参考列或参考行选择性地放置在存储器阵列中的方法。 该方法包括测量存储器阵列内的多个可变电阻存储器单元的电阻状态电阻值，并映射每个测量的可变电阻存储单元的位置，以形成多个可变电阻存储单元的电阻状态电阻值的映射 在内存阵列内。 然后，基于存储器阵列内的多个可变电阻存储器单元的电阻状态电阻值的映射来选择列或行作为参考列或参考行，以最小化读取操作错误，以及形成可变电阻存储器 单元存储器阵列。

公开(公告)号：US20060089131A1

公开(公告)日：2006-04-27

申请号：US11021831

申请日：2004-12-24

申请人： Henry Huang

发明人： Henry Huang

IPC分类号： H04Q7/20

CPC分类号： H04W4/10 ,  H04W76/00 ,  H04W76/45

摘要： Timers in push-to-talk (PTT) enabled client devices are used to regulate packet traffic to and from the client device. In one embodiment, during a real-time multimedia session, a suspend timer is activated during data communication channel suspension. The session is held until suspend timer times out. If the data communication channel is restored before the suspend timer times out, the session is not reset, and the user is still able to continue the session with little noticeable loss of service. If the suspend timer times out, and the data communication channel has not been restored, then the session is terminated.

摘要翻译： 一键通（PTT）启用的客户端设备中的定时器用于调节到客户端设备的数据包流量。 在一个实施例中，在实时多媒体会话期间，暂停定时器在数据通信信道暂停期间被激活。 会话持续到暂停定时器超时。 如果在暂停定时器超时之前数据通信通道被恢复，则会话不会重置，并且用户仍然能够继续会话，几乎没有显着的服务丢失。 如果挂起定时器超时，并且数据通信信道尚未恢复，则会话终止。

公开(公告)号：USD405049S

公开(公告)日：1999-02-02

申请号：US78986

申请日：1997-11-04

申请人： Henry Huang ,  Danny Chou ,  Marty Wu ,  Ken Chen

设计人： Henry Huang ,  Danny Chou ,  Marty Wu ,  Ken Chen

公开(公告)号：US5221439A

公开(公告)日：1993-06-22

申请号：US716083

申请日：1991-06-17

申请人： Yao-Tzu Li ,  Henry Huang ,  I-Chieng Ho ,  Albert P. Yundt, Jr.

发明人： Yao-Tzu Li ,  Henry Huang ,  I-Chieng Ho ,  Albert P. Yundt, Jr.

IPC分类号： A23G9/12 ,  A23G9/22 ,  B01D1/06 ,  B01D1/22 ,  B01D1/28 ,  F25C1/14 ,  F28F13/12

CPC分类号： B01D1/28 ,  A23G9/12 ,  A23G9/224 ,  B01D1/065 ,  B01D1/222 ,  F25C1/145 ,  F28F13/125 ,  Y10S159/31

摘要： An orbital evaporator has a vertical heat transfer tube or tubes mounted in a container driven in an orbital motion. A stiff whip rod is freely movable within the tube. Its lower end rests on a horizontal plate. The orbital motion causes the rod to roll over the interior surface of the tube to distribute the liquid in a thin film and to control fouling. A set of fins is mounted on the exterior of the tube to collect and channel the condensate to improve heat transfer through the tube. The fins are preferably longitudinal and the whip rod is preferably hydrophobic. Operating the evaporator with boiling temperatures substantially below 100.degree. C. in combination with the fins and a rolling whip rod allows operation as a desalinization unit for an indefinite period of time with a high total heat transfer coefficient. The evaporator preferably also includes a degasser to control the formation of a gas barrier at the exterior surface of the tube.

摘要翻译： 轨道蒸发器具有安装在以轨道运动驱动的容器中的垂直传热管或管。 刚性的鞭杆可在管内自由移动。 其下端位于水平板上。 轨道运动导致杆在管的内表面上滚动以将液体分布在薄膜中并控制结垢。 一组翅片安装在管的外部以收集和引导冷凝物以改善通过管的热传递。 翅片优选地是纵向的，并且鞭杆优选是疏水的。 操作沸腾温度基本上低于100℃的蒸发器与翅片组合，并且滚动鞭杆可以作为脱盐单元操作，具有高的总传热系数的无限期。 蒸发器优选还包括脱气器以控制在管的外表面处形成气体阻挡层。

公开(公告)号：US20120163065A1

公开(公告)日：2012-06-28

申请号：US13410783

申请日：2012-03-02

申请人： Yiran Chen ,  Hai Li ,  Wenzhong Zhu ,  Xiaobin Wang ,  Henry Huang ,  Hongyue Liu

发明人： Yiran Chen ,  Hai Li ,  Wenzhong Zhu ,  Xiaobin Wang ,  Henry Huang ,  Hongyue Liu

IPC分类号： G11C11/00

CPC分类号： G11C5/025 ,  G11C11/1653 ,  G11C11/1673

摘要： The present disclosure relates to methods of selectively placing a reference column or reference row in a memory array. The method includes measuring a resistance state resistance value for a plurality of variable resistive memory cells within a memory array and mapping a location of each measured variable resistive memory cell to form a map of the resistance state resistance values for a plurality of variable resistive memory cells within a memory array. Then a column or row is selected to be a reference column or reference row based on the map of the resistance state resistance value for a plurality of variable resistive memory cells within a memory array, to minimize read operation errors, and forming a variable resistive memory cell memory array.

摘要翻译： 本公开涉及将参考列或参考行选择性地放置在存储器阵列中的方法。 该方法包括测量存储器阵列内的多个可变电阻存储器单元的电阻状态电阻值，并映射每个测量的可变电阻存储单元的位置，以形成多个可变电阻存储单元的电阻状态电阻值的映射 在内存阵列内。 然后，基于存储器阵列内的多个可变电阻存储器单元的电阻状态电阻值的映射来选择列或行作为参考列或参考行，以最小化读取操作错误，以及形成可变电阻存储器 单元存储器阵列。

公开(公告)号：US08203893B2

公开(公告)日：2012-06-19

申请号：US13210934

申请日：2011-08-16

申请人： Hai Li ,  Yiran Chen ,  Harry Hongyue Liu ,  Henry Huang ,  Ran Wang

发明人： Hai Li ,  Yiran Chen ,  Harry Hongyue Liu ,  Henry Huang ,  Ran Wang

IPC分类号： G11C5/14 ,  G11C11/00 ,  G11C17/00 ,  G11C11/14

CPC分类号： G11C8/08 ,  G11C11/1659 ,  G11C11/1675 ,  G11C13/0028 ,  G11C13/0069 ,  G11C2013/0071

摘要： Apparatus and method for write current compensation in a non-volatile memory cell, such as but not limited to spin-torque transfer random access memory (STRAM) or resistive random access memory (RRAM). In accordance with some embodiments, a non-volatile memory cell has a resistive sense element (RSE) coupled to a switching device, the RSE having a hard programming direction and an easy programming direction opposite the hard programming direction. A voltage boosting circuit includes a capacitor which adds charge to a nominal non-zero voltage supplied by a voltage source to a node to generate a temporarily boosted voltage. The boosted voltage is applied to the switching device when the RSE is programmed in the hard programming direction.

摘要翻译： 非易失性存储单元中的写入电流补偿的装置和方法，例如但不限于自旋转矩传递随机存取存储器（STRAM）或电阻随机存取存储器（RRAM）。 根据一些实施例，非易失性存储器单元具有耦合到开关器件的电阻感测元件（RSE），RSE具有硬编程方向和与硬编程方向相反的简单编程方向。 升压电路包括电容器，该电容器将电压加到由电压源向节点提供的标称非零电压以产生暂时提升的电压。 当RSE在硬编程方向编程时，升压电压施加到开关器件。