Electron emitter device for data storage applications and method of manufacture
    2.
    发明授权
    Electron emitter device for data storage applications and method of manufacture 失效
    用于数据存储应用的电子发射器件和制造方法

    公开(公告)号:US07585687B2

    公开(公告)日:2009-09-08

    申请号:US10932695

    申请日:2004-09-01

    IPC分类号: H01L21/66

    摘要: A field emission device, which among other things may be used within an ultra-high density storage system, is disclosed. The emitter device includes an emitter electrode, an extractor electrode, and a solid-state field controlled emitter that utilizes a Schottky metal-semiconductor junction or barrier. The Schottky metal-semiconductor barrier is formed on the emitter electrode and electrically couples with the extractor electrode such that when an electric potential is placed between the emitter electrode and the extractor electrode, a field emission of electrons is generated from an exposed surface of the semiconductor layer. Further, the Schottky metal may be selected from typical conducting layers such as platinum, gold, silver, or a conductive semiconductor layer that is able to provide a high electron pool at the barrier. The semiconductor layer placed on the Schottky metal is typically very weakly conductive of n-type and has a wide band gap in order to create conditions conducive to creating induced negative electron affinity at applied fields necessary to provide electron emission. One type of wide band-gap material can be selected from titanium dioxide or titanium nitride or other comparable materials.

    摘要翻译: 公开了一种场致发射装置,其可以在超高密度存储系统内使用。 发射器件包括发射电极,提取器电极和利用肖特基金属 - 半导体结或势垒的固态场控制的发射极。 肖特基金属半导体势垒形成在发射极电极上并与提取器电极电耦合,使得当在发射电极和提取器电极之间放置电位时,从半导体的暴露表面产生电子的场发射 层。 此外,肖特基金属可以选自能够在屏障处提供高电子池的典型的导电层,例如铂,金,银或导电半导体层。 放置在肖特基金属上的半导体层通常是n型非常弱的导电性并且具有宽的带隙,以便产生有助于在提供电子发射所必需的施加场产生诱导的负电子亲和力的条件。 一种类型的宽带隙材料可以选自二氧化钛或氮化钛或其他可比较的材料。

    See-through display
    3.
    发明申请
    See-through display 有权
    透视显示

    公开(公告)号:US20080018555A1

    公开(公告)日:2008-01-24

    申请号:US11491360

    申请日:2006-07-21

    IPC分类号: G09G5/00

    CPC分类号: G02B17/006

    摘要: In a particular embodiment, a see-through display includes a screen having transparent layer of material with a front side and a back side. At least one plurality of shaped louver members is disposed between the front side and the back side. The plurality of the louver members allow transmission of a fraction of light through the screen with minimum scattering within a range of incident angles. The plurality of the louvers also redirect image signal light from an image source into a range of angles centered about a normal to the screen. The louver members combine the image signal light with the light emitted from background objects located on the backside of the screen. The background image light is transmitted through the display screen with minimal scattering. For embodiments providing two sets of louver members, the image signal light may be redirected to observers on either side of the screen, such that the observers may see each other as well as the intended image.

    摘要翻译: 在特定实施例中,透视显示器包括具有前侧和后侧的透明材料层的屏幕。 至少一个成形百叶窗构件设置在前侧和后侧之间。 多个百叶窗构件允许一定数量的光在入射角的范围内以最小的散射透过屏幕。 多个百叶窗还将来自图像源的图像信号光重定向到以屏幕垂直为中心的范围内。 百叶窗构件将图像信号光与位于屏幕背面的背景物体发出的光组合。 背景图像光通过显示屏以最小的散射传播。 对于提供两组百叶窗构件的实施例,图像信号光可以被重定向到屏幕两侧的观察者,使得观察者可以看到彼此以及预期图像。

    See-through display
    4.
    发明授权
    See-through display 有权
    透视显示

    公开(公告)号:US08462081B2

    公开(公告)日:2013-06-11

    申请号:US13043973

    申请日:2011-03-09

    IPC分类号: G09G5/00

    CPC分类号: G02B17/006

    摘要: A screen includes a first set of louver members at least partially disposed in the screen and located proximate to a first side of the screen, and a second set of louver members at least partially disposed in the screen and located proximate to a second side of the screen. An observer on either side of the screen sees an image produced by light directed to that observer by that set of louvers on the same side of the screen as the observer. Objects on the other side of the screen from the observer are visible to the observer between the louvers.

    摘要翻译: 屏幕包括至少部分地布置在屏幕中并且位于屏幕的第一侧附近的第一组百叶窗构件,以及第二组百叶窗构件,其至少部分地布置在屏幕中并且位于靠近屏幕的第二侧 屏幕。 屏幕两侧的观察者看到由与观察者在屏幕同一侧上的该组百叶窗指向该观察者的光产生的图像。 来自观察者的屏幕另一侧的对象对于观察者在百叶窗之间是可见的。

    See-through display
    5.
    发明授权
    See-through display 有权
    透视显示

    公开(公告)号:US08212744B2

    公开(公告)日:2012-07-03

    申请号:US11491360

    申请日:2006-07-21

    IPC分类号: G09G5/00

    CPC分类号: G02B17/006

    摘要: In a particular embodiment, a see-through display includes a screen having transparent layer of material with a front side and a back side. At least one plurality of shaped louver members is disposed between the front side and the back side. The plurality of the louver members allow transmission of a fraction of light through the screen with minimum scattering within a range of incident angles. The plurality of the louvers also redirect image signal light from an image source into a range of angles centered about a normal to the screen. The louver members combine the image signal light with the light emitted from background objects located on the backside of the screen. The background image light is transmitted through the display screen with minimal scattering. For embodiments providing two sets of louver members, the image signal light may be redirected to observers on either side of the screen, such that the observers may see each other as well as the intended image.

    摘要翻译: 在特定实施例中,透视显示器包括具有前侧和后侧的透明材料层的屏幕。 至少一个成形百叶窗构件设置在前侧和后侧之间。 多个百叶窗构件允许一定数量的光在入射角的范围内以最小的散射透过屏幕。 多个百叶窗还将来自图像源的图像信号光重定向到以屏幕垂直为中心的范围内。 百叶窗构件将图像信号光与位于屏幕背面的背景物体发出的光组合。 背景图像光通过显示屏以最小的散射传播。 对于提供两组百叶窗构件的实施例,图像信号光可以被重定向到屏幕两侧的观察者,使得观察者可以看到彼此以及期望的图像。

    Data storage device
    6.
    发明授权
    Data storage device 有权
    数据存储设备

    公开(公告)号:US06872964B2

    公开(公告)日:2005-03-29

    申请号:US10644503

    申请日:2003-08-20

    摘要: The present disclosure relates to a data storage device, comprising a plurality of electron emitters adapted to emit electron beams, the electron emitters each having a planar emission surface, and a storage medium in proximity to the electron emitter, the storage medium having a plurality of storage areas that are capable of at least two distinct states that represent data, the state of the storage areas being changeable in response to bombardment by electron beams emitted by the electron emitters.

    摘要翻译: 本公开涉及一种数据存储装置,包括适于发射电子束的多个电子发射器,每个具有平面发射表面的电子发射器和靠近电子发射器的存储介质,所述存储介质具有多个 能够具有表示数据的至少两个不同状态的存储区域,存储区域的状态可响应于由电子发射器发射的电子束的轰击而变化。

    Electron emitter device for data storage applications
    7.
    发明授权
    Electron emitter device for data storage applications 失效
    用于数据存储应用的电子发射器件

    公开(公告)号:US06864624B2

    公开(公告)日:2005-03-08

    申请号:US10697170

    申请日:2003-10-30

    摘要: A field emission device, which among other things may be used within an ultra-high density storage system, is disclosed. The emitter device includes an emitter electrode, an extractor electrode, and a solid-state field controlled emitter that utilizes a Schottky metal-semiconductor junction or barrier. The Schottky metal-semiconductor barrier is formed on the emitter electrode and electrically couples with the extractor electrode such that when an electric potential is placed between the emitter electrode and the extractor electrode, a field emission of electrons is generated from an exposed surface of the semiconductor layer. Further, the Schottky metal may be selected from typical conducting layers such as platinum, gold, silver, or a conductive semiconductor layer that is able to provide a high electron pool at the barrier. The semiconductor layer placed on the Schottky metal is typically very weakly conductive of n-type and has a wide band gap in order to create conditions conducive to creating induced negative electron affinity at applied fields necessary to provide electron emission. One type of wide band-gap material can be selected from titanium dioxide or titanium nitride or other comparable materials.

    摘要翻译: 公开了一种场致发射装置,其可以在超高密度存储系统内使用。 发射器件包括发射电极,提取器电极和利用肖特基金属 - 半导体结或势垒的固态场控制的发射极。 肖特基金属半导体势垒形成在发射极电极上并与提取器电极电耦合,使得当在发射电极和提取器电极之间放置电位时,从半导体的暴露表面产生电子的场发射 层。 此外,肖特基金属可以选自能够在屏障处提供高电子池的典型的导电层,例如铂,金,银或导电半导体层。 放置在肖特基金属上的半导体层通常是n型非常弱的导电性并且具有宽的带隙,以便产生有助于在提供电子发射所必需的施加场产生诱导的负电子亲和力的条件。 一种类型的宽带隙材料可以选自二氧化钛或氮化钛或其他可比较的材料。

    SEE-THROUGH DISPLAY
    9.
    发明申请
    SEE-THROUGH DISPLAY 有权
    看到显示

    公开(公告)号:US20110157708A1

    公开(公告)日:2011-06-30

    申请号:US13043973

    申请日:2011-03-09

    IPC分类号: G02B27/01

    CPC分类号: G02B17/006

    摘要: A screen includes a first set of louver members at least partially disposed in the screen and located proximate to a first side of the screen, and a second set of louver members at least partially disposed in the screen and located proximate to a second side of the screen. An observer on either side of the screen sees an image produced by light directed to that observer by that set of louvers on the same side of the screen as the observer. Objects on the other side of the screen from the observer are visible to the observer between the louvers.

    摘要翻译: 屏幕包括至少部分地布置在屏幕中并且位于屏幕的第一侧附近的第一组百叶窗构件,以及第二组百叶窗构件,其至少部分地布置在屏幕中并且位于靠近屏幕的第二侧 屏幕。 屏幕两侧的观察者看到由与观察者在屏幕同一侧上的该组百叶窗指向该观察者的光产生的图像。 来自观察者的屏幕另一侧的对象对于观察者在百叶窗之间是可见的。

    Electron emitter device for data storage applications and method of manufacture

    公开(公告)号:US06806630B2

    公开(公告)日:2004-10-19

    申请号:US10042927

    申请日:2002-01-09

    IPC分类号: H01J114

    摘要: A field emission device, which among other things may be used within an ultra-high density storage system, is disclosed. The emitter device includes an emitter electrode, an extractor electrode, and a solid-state field controlled emitter that utilizes a Schottky metal-semiconductor junction or barrier. The Schottky metal-semiconductor barrier is formed on the emitter electrode and electrically couples with the extractor electrode such that when an electric potential is placed between the emitter electrode and the extractor electrode, a field emission of electrons is generated from an exposed surface of the semiconductor layer. Further, the Schottky metal may be selected from typical conducting layers such as platinum, gold, silver, or a conductive semiconductor layer that is able to provide a high electron pool at the barrier. The semiconductor layer placed on the Schottky metal is typically very weakly conductive of n-type and has a wide band gap in order to create conditions conducive to creating induced negative electron affinity at applied fields necessary to provide electron emission. One type of wide band-gap material can be selected from titanium dioxide or titanium nitride or other comparable materials.