公开(公告)号：US10107221B2

公开(公告)日：2018-10-23

申请号：US14772480

申请日：2014-02-28

Applicant: Heraeus Sensor Technology GmbH

Inventor： Karlheinz Wienand ,  Matsvei Zinkevich ,  Dieter Teusch

IPC: G01N15/06 ,  F02D41/14 ,  G01K13/02 ,  G01N25/72

Abstract: A method for producing a soot sensor is provided. The method includes steps of applying a contiguous metallic layer on an electrically insulating substrate and structuring the metal coating with a laser beam by vaporizing areas of the metallic layer. At least two interlaced contiguous electrically conductive structures are produced. The electrically conductive structures are spatially separated from one another with the laser beam and are electrically insulated from one another such that the conductive structures substantially extend next to one another and close to one another in an area relative to a total length thereof. A soot sensor produced using such a method is also provided. The soot sensor has an electrically insulating substrate and at least two contiguous electrically conductive structures which are spatially separated from one another and are interlaced as structured metallic layers. An intermediate space between the conductive structures is burned free with a laser.

公开(公告)号：US10529470B2

公开(公告)日：2020-01-07

申请号：US15129288

申请日：2015-03-25

Applicant: HERAEUS SENSOR TECHNOLOGY GMBH

Inventor： Thomas Loose ,  Stefan Dietmann ,  Alfred Fleckenstein ,  Dieter Teusch

IPC: H01C1/016 ,  H01C7/00 ,  G01K7/18 ,  H01C3/12 ,  H01C17/08 ,  H01C17/065 ,  H05B3/12 ,  H01C17/075 ,  G01N15/00 ,  G01N15/06

Abstract: An Al2O3 carrier has a thin-film structure of platinum or a platinum alloy arranged thereon. The carrier and/or the thin-film structure are adapted to reduce mechanical stresses owing to different thermal expansion coefficients. The carrier and/or the thin-film structure include a surface of the carrier in the region of the thin-film structure is smoothed at least in sections to reduce the adhesion and/or a surface of the carrier has an intermediate layer on which the thin-film structure is arranged. The thermal expansion coefficient of the intermediate layer is from 8*10−6/K to 16*10−6/K, in particular from 8.5*10−6/K to 14*10−6/K, and/or the thin-film structure has at least one conductor path that is undular at least in sections, said conductor path extends laterally along the surface of the carrier.