公开(公告)号：US20170213959A1

公开(公告)日：2017-07-27

申请号：US15324691

申请日：2014-07-30

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Gary GIBSON ,  James Elmer ABBOTT Jr. ,  Zhiyong LI

IPC: H01L45/00 ,  C22C30/00 ,  C22C27/04 ,  C22C5/04 ,  H01L27/24 ,  C22C27/02

CPC classification number: H01L45/128 ,  C22C5/04 ,  C22C27/02 ,  C22C27/04 ,  C22C30/00 ,  H01L27/2427 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/142 ,  H01L45/143 ,  H01L45/146 ,  H01L45/148 ,  H01L45/16

Abstract: A non-volatile memory device includes two electrodes and an active region disposed between and in electrical contact with the electrodes. The active region contains a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field. The electrode is an amorphous conductive material comprising 5 to 90 at % of a first metal, 5 to 90 at % of a second metal, and 5 to 90 at % of a metalloid, wherein the metalloid is any of carbon, silicon, and boron. The metalloid, the first metal, and the second metal account for at least 70 at % of the amorphous conductive material.