公开(公告)号：US20170271410A1

公开(公告)日：2017-09-21

申请号：US15500049

申请日：2015-02-11

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Minxian Max Zhang ,  Kathryn Samuels ,  Jianhua Joshua Yang ,  R. Stanley Williams ,  Zhiyong Li

IPC: H01L27/24

CPC classification number: H01L27/2418 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/14 ,  H01L45/146

Abstract: Provided in one example is a nonvolatile memory crossbar array. The array includes a number of junctions formed by a number of row lines intersecting a number of column lines; and a resistive memory element in series with a selector at each of the junctions coupling between one of the row lines and one of the column lines. The selector may be a volatile switch including: a bottom electrode; an oxide layer disposed over the bottom electrode, the oxide layer including Cu2O; and a top electrode disposed over the oxide layer.