公开(公告)号：US20170200496A1

公开(公告)日：2017-07-13

申请号：US15325358

申请日：2014-10-24

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Brent Buchanan ,  R. Stanely Williams

IPC: G11C13/00

CPC classification number: G11C13/004 ,  G11C11/1673 ,  G11C13/0002 ,  G11C13/0007 ,  G11C2013/0045 ,  G11C2013/0054

Abstract: A method of increasing a read margin in a memory cell may include sensing an input current created from the application of a read voltage across a memristive device, squaring the input current, and comparing the squared input current to a reference current. A memristive device may include a memristor and a sense amplifier communicatively coupled to the memristor wherein a sensed input current created from the application of a reference voltage across a memristor is squared and wherein the sense amplifier compares the squared input current to a reference current.