公开(公告)号：US20180006449A1

公开(公告)日：2018-01-04

申请号：US15540192

申请日：2015-01-28

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Brent Buchanan ,  Richard J. Auletta ,  Ning Ge

IPC: H02H9/04 ,  H01L21/8234 ,  H01L45/00 ,  H01L27/02 ,  H01L27/092 ,  G11C13/00

CPC classification number: H02H9/046 ,  G11C13/004 ,  G11C13/0097 ,  G11C2029/5002 ,  H01L21/823475 ,  H01L27/0266 ,  H01L27/0288 ,  H01L27/092 ,  H01L45/1608

Abstract: In the examples provided herein, an electrostatic discharge (ESD) recording circuit has a first memristive element coupled to a pin of an integrated circuit. The first memristive element switches from a first resistance to a second resistance when an ESD event occurs at the pin, and the first resistance is less than the second resistance. The ESD recording circuit also has shunting circuitry to shunt energy from an additional ESD event away from the first memristive element.

公开(公告)号：US10418810B2

公开(公告)日：2019-09-17

申请号：US15540192

申请日：2015-01-28

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Brent Buchanan ,  Richard J. Auletta ,  Ning Ge

IPC: H02H9/04 ,  G11C13/00 ,  H01L27/02 ,  H01L45/00 ,  H01L27/092 ,  H01L21/8234 ,  G11C29/50

Abstract: In the examples provided herein, an electrostatic discharge (ESD) recording circuit has a first memristive element coupled to a pin of an integrated circuit. The first memristive element switches from a first resistance to a second resistance when an ESD event occurs at the pin, and the first resistance is less than the second resistance. The ESD recording circuit also has shunting circuitry to shunt energy from an additional ESD event away from the first memristive element.