摘要:
A control unit capable of reliably preventing loss of data also when losing power during data processing is obtained. This control unit comprises a volatile memory temporarily storing data used in the control unit and a nonvolatile memory holding data of the volatile memory, for writing the same data as that written in the volatile memory also in the nonvolatile memory upon occurrence of writing in the volatile memory.
摘要:
A memory capable of preventing a memory cell from disappearance of data resulting from accumulated disturbances is obtained. This memory comprises a nonvolatile memory cell and a refresh portion for rewriting data in the memory cell. The refresh portion reads data from and rewrites data in the memory cell in a power-down state.
摘要:
This memory comprises a first frequency detecting portion detecting access frequencies with respect to a plurality of memory cell blocks respectively, a comparator comparing the access frequencies with respect to the plurality of memory cell blocks detected by the first frequency detecting portion with each other and a refresh portion exercising control for selecting a prescribed memory cell block from among the plurality of memory cell blocks on the basis of comparison data output from the comparator and preferentially rewriting data in the memory cells included in the selected memory cell block.
摘要:
A memory wherein any “disturb effect” can be suppressed in which data in unselected memory cells are lost. This memory has a memory cell array(1) including bit lines, word lines, which are disposed to intersect the bit lines, and memory cells(12) each connected between bit and word lines. In this memory, an access operation, which includes at least one of read, rewrite and write operations, is made to a selected memory cell(12). During this access operation, it is performed to apply to the memory cell(12) a first voltage pulse, which provides an electrical field in a first direction so as to invert a stored data, and a second voltage pulse, which provides as electrical field in the opposite direction to the first one so as not to invert the stored data. In addition, a recovery operation for recovering a residual polarization amount is made to the memory cell(12).
摘要:
This memory comprises a first frequency detecting portion detecting access frequencies with respect to a plurality of memory cell blocks respectively, a comparator comparing the access frequencies with respect to the plurality of memory cell blocks detected by the first frequency detecting portion with each other and a refresh portion exercising control for selecting a prescribed memory cell block from among the plurality of memory cell blocks on the basis of comparison data output from the comparator and preferentially rewriting data in the memory cells included in the selected memory cell block.
摘要:
A memory capable of suppressing reduction of a reading voltage in data reading regardless of dispersion in a manufacturing process is provided. This memory comprises charge storage means, a first field-effect transistor and data determination means. The memory sets a voltage between a control terminal and a remaining first terminal of the first field-effect transistor to a threshold voltage for bringing the first field-effect transistor into an OFF-state in the vicinity of a boundary state between ON- and OFF-states through the threshold voltage of the first field-effect transistor.
摘要:
A memory capable of preventing a memory cell from disappearance of data resulting from accumulated disturbances is obtained. This memory comprises a nonvolatile memory cell and a refresh portion for rewriting data in the memory cell. The refresh portion reads and rewrites data from and in the memory cell in a power-down state.
摘要:
A memory capable of suppressing reduction of a reading voltage in data reading regardless of dispersion in a manufacturing process is provided. This memory comprises charge storage means, a first field-effect transistor and data determination means. The memory sets a voltage between a control terminal and a remaining first terminal of the first field-effect transistor to a threshold voltage for bringing the first field-effect transistor into an OFF-state in the vicinity of a boundary state between ON- and OFF-states through the threshold voltage of the first field-effect transistor.
摘要:
A memory wherein any “disturb effect” can be suppressed in which data in unselected memory cells are lost. This memory has a memory cell array (1) including bit lines, word lines, which are disposed to intersect the bit lines, and memory cells (12) each connected between bit and word lines. In this memory, an access operation, which includes at least one of read, rewrite and write operations, is made to a selected memory cell (12). During this access operation, it is performed to apply to the memory cell (12) a first voltage pulse, which provides an electrical field in a first direction so as to invert a stored data, and a second voltage pulse, which provides as electrical field in the opposite direction to the first one so as not to invert the stored data. In addition, a recovery operation for recovering a residual polarization amount is made to the memory cell (12).
摘要:
A memory allowing reduction of the period of an external access operation is provided. This memory comprises an access control portion performing an internal access operation on the basis of an external access operation, a refresh control portion performing a refresh operation and a refresh division control portion dividing the refresh operation into a read operation RFRD and rewrite operations RFRS1 and RFRS2. The memory performs the read operation RFRD and the rewrite operations RFRS1 and RFRS2 at least either before or after different internal access operations corresponding to different external access operations respectively.