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    Positive-working photoresist composition
    2.
    发明授权
    Positive-working photoresist composition 有权
    正光刻胶组合物

    公开(公告)号：US06749989B2

    公开(公告)日：2004-06-15

    申请号：US09996676

    申请日：2001-11-30

    申请人： Hideo Hada ,  Satoshi Fujimura ,  Kazuhito Sasaki ,  Takeshi Iwai

    发明人： Hideo Hada ,  Satoshi Fujimura ,  Kazuhito Sasaki ,  Takeshi Iwai

    IPC分类号： G03F7004

    CPC分类号： G03F7/0397 ,  Y10S430/106 ,  Y10S430/115

    摘要： The invention discloses a positive-working photoresist composition suitable for patterning light-exposure with light having a wavelength of 200 nm or shorter. The photoresist composition comprises a resinous compound capable of being imparted with increased solubility in an aqueous alkaline solution by interaction with an acid, a radiation-sensitive acid generating compound capable of generating an acid by irradiation with a radiation and an organic solvent, in which the resinous compound is a copolymer consisting of a combination of three types of specific (meth)acrylate units as the monomeric units. The patterned resist layer formed from the photoresist composition has an advantage in respect of decreased line slimming caused by electron beam irradiation in SEM inspection.

    摘要翻译： 本发明公开了一种正性光致抗蚀剂组合物，其适用于利用波长为200nm或更短的光图案曝光。 光致抗蚀剂组合物包括能够通过与酸的相互作用赋予在碱性水溶液中更高的溶解度的树脂化合物，能够通过辐射和有机溶剂照射产生酸的辐射敏感的产酸化合物，其中 树脂化合物是由作为单体单元的三种特定（甲基）丙烯酸酯单元的组合构成的共聚物。 由光致抗蚀剂组合物形成的图案化抗蚀剂层在SEM检查中对于由电子束照射引起的减少的线减少具有优点。

    Resist composition, multilayer body, and method for forming resist pattern
    3.
    发明授权
    Resist composition, multilayer body, and method for forming resist pattern 有权
    抗蚀剂组合物，多层体和形成抗蚀剂图案的方法

    公开(公告)号：US07544460B2

    公开(公告)日：2009-06-09

    申请号：US10563705

    申请日：2004-07-07

    申请人： Hideo Hada ,  Kazuhito Sasaki ,  Satoshi Fujimura ,  Takeshi Iwai

    发明人： Hideo Hada ,  Kazuhito Sasaki ,  Satoshi Fujimura ,  Takeshi Iwai

    IPC分类号： G03F7/004 ,  G03F7/30

    CPC分类号： G03F7/40 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

    摘要： A resist composition is disclosed that enables formation of a favorable resist pattern using a shrink process in which, following formation of the resist pattern, a treatment such as heating is used to narrow the resist pattern, and also disclosed are a laminate and a method for forming a resist pattern that use such a resist composition. This resist composition includes a resin component (A) that displays changed alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure. The component (A) contains structural units derived from a (meth)acrylate ester, and exhibits a glass transition temperature that falls within a range from 120 to 170° C.

    摘要翻译： 公开了一种抗蚀剂组合物，其能够使用收缩方法形成良好的抗蚀剂图案，其中，在形成抗蚀剂图案之后，使用诸如加热的处理来缩小抗蚀剂图案，并且还公开了层压体和方法 形成使用这种抗蚀剂组合物的抗蚀剂图案。 该抗蚀剂组合物包含在酸的作用下显示出碱溶解性变差的树脂成分（A）和曝光时产生酸的酸发生剂成分（B）。 组分（A）含有衍生自（甲基）丙烯酸酯的结构单元，其玻璃化转变温度为120-170℃。

    Positive type resist composition and resist pattern formation method using same
    4.
    发明授权
    Positive type resist composition and resist pattern formation method using same 有权
    正型抗蚀剂组合物和使用其的抗蚀剂图案形成方法

    公开(公告)号：US07316888B2

    公开(公告)日：2008-01-08

    申请号：US11347102

    申请日：2006-02-02

    申请人： Takeshi Iwai ,  Naotaka Kubota ,  Satoshi Fujimura ,  Miwa Miyairi ,  Hideo Hada

    发明人： Takeshi Iwai ,  Naotaka Kubota ,  Satoshi Fujimura ,  Miwa Miyairi ,  Hideo Hada

    IPC分类号： G03F7/004 ,  G03F7/30

    CPC分类号： G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

    摘要： There is provided a positive type resin composition comprising (A) a resin component comprising within the principal chain a structural unit derived from a (meth)acrylate ester and incorporating an acid dissociable, dissolution inhibiting group containing a polycyclic group on an ester side chain section, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent, wherein the component (A) comprises both a structural unit derived from a methacrylate ester and a structural unit derived from an acrylate ester. According to such a resist composition, a resist pattern can be formed which displays little surface roughness and line edge roughness on etching, and also offers excellent resolution and a wide depth of focus range.

    摘要翻译： 提供一种正型树脂组合物，其包含（A）树脂组分，其在主链内包含衍生自（甲基）丙烯酸酯的结构单元，并且在酯侧链部分上并入含有多环基团的酸解离的溶解抑制基团 （B）在暴露时产生酸的酸产生剂组分和（C）有机溶剂，其中组分（A）包含衍生自甲基丙烯酸酯的结构单元 酯和衍生自丙烯酸酯的结构单元。 根据这样的抗蚀剂组合物，可以形成抗蚀剂图案，其在蚀刻时显示出很小的表面粗糙度和线边缘粗糙度，并且还提供优异的分辨率和宽的焦深范围。

    Negative-working photoresist composition
    6.
    发明授权
    Negative-working photoresist composition 有权

    公开(公告)号：US06749991B2

    公开(公告)日：2004-06-15

    申请号：US10196681

    申请日：2002-07-18

    申请人： Hideo Hada ,  Takeshi Iwai ,  Satoshi Fujimura

    发明人： Hideo Hada ,  Takeshi Iwai ,  Satoshi Fujimura

    IPC分类号： G03F7004

    CPC分类号： G03F7/0382 ,  Y10S430/106 ,  Y10S430/111

    摘要： Disclosed is a chemical-amplification negative-working photoresist composition used for photolithographic patterning in the manufacture of semiconductor devices suitable for patterning light-exposure to ArF excimer laser beams and capable of giving a high-resolution patterned resist layer free from swelling and having an orthogonal cross sectional profile by alkali-development. The characteristic ingredient of the composition is the resinous compound which has two types of functional groups, e.g., hydroxyalkyl groups and carboxyl or carboxylate ester groups, capable of reacting each with the other to form intramolecular and/or intermolecular ester linkages in the presence of an acid released from the radiation-sensitive acid generating agent to cause insolubilization of the resinous ingredient in an aqueous alkaline developer solution.

    Negative-working photoresist composition
    7.
    发明授权
    Negative-working photoresist composition 有权

    公开(公告)号：US06444397B1

    公开(公告)日：2002-09-03

    申请号：US09865530

    申请日：2001-05-29

    申请人： Hideo Hada ,  Takeshi Iwai ,  Satoshi Fujimura

    发明人： Hideo Hada ,  Takeshi Iwai ,  Satoshi Fujimura

    IPC分类号： G03F7004

    摘要： Disclosed is a chemical-amplification negative-working photoresist composition used for photolithographic patterning in the manufacture of semiconductor devices suitable for patterning light-exposure to ArF excimer laser beams and capable of giving a high-resolution patterned resist layer free from swelling and having an orthogonal cross sectional profile by alkali-development. The characteristic ingredient of the composition is the resinous compound which has two types of functional groups, e.g., hydroxyalkyl groups and carboxyl or carboxylate ester groups, capable of reacting each with the other to form intramolecular and/or intermolecular ester linkages in the presence of an acid released from the radiation-sensitive acid generating agent to cause insolubilization of the resinous ingredient in an aqueous alkaline developer solution.

    Positive type resist composition and resist pattern formation method using same
    8.
    发明授权
    Positive type resist composition and resist pattern formation method using same 有权
    正型抗蚀剂组合物和使用其的抗蚀剂图案形成方法

    公开(公告)号：US07501221B2

    公开(公告)日：2009-03-10

    申请号：US11347167

    申请日：2006-02-02

    申请人： Takeshi Iwai ,  Naotaka Kubota ,  Satoshi Fujimura ,  Miwa Miyairi ,  Hideo Hada

    发明人： Takeshi Iwai ,  Naotaka Kubota ,  Satoshi Fujimura ,  Miwa Miyairi ,  Hideo Hada

    IPC分类号： G03F7/004

    CPC分类号： G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

    摘要： There is provided a positive type resin composition comprising (A) a resin component comprising within the principal chain a structural unit derived from a (meth)acrylate ester and incorporating an acid dissociable, dissolution inhibiting group containing a polycyclic group on an ester side chain section, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent, whereinthe component (A) comprises both a structural unit derived from a methacrylate ester and a structural unit derived from an acrylate ester. According to such a resist composition, a resist pattern can be formed which displays little surface roughness and line edge roughness on etching, and also offers excellent resolution and a wide depth of focus range.

    摘要翻译： 提供一种正型树脂组合物，其包含（A）树脂组分，其在主链内包含衍生自（甲基）丙烯酸酯的结构单元，并且在酯侧链部分上并入含有多环基团的酸解离的溶解抑制基团 （B）在暴露时产生酸的酸产生剂组分和（C）有机溶剂，其中组分（A）包含衍生自甲基丙烯酸酯的结构单元 酯和衍生自丙烯酸酯的结构单元。 根据这样的抗蚀剂组合物，可以形成抗蚀剂图案，其在蚀刻时显示出很小的表面粗糙度和线边缘粗糙度，并且还提供优异的分辨率和宽的焦深范围。

    Positive type resist composition and resist pattern formation method using same
    9.
    发明授权
    Positive type resist composition and resist pattern formation method using same 有权
    正型抗蚀剂组合物和使用其的抗蚀剂图案形成方法

    公开(公告)号：US07435530B2

    公开(公告)日：2008-10-14

    申请号：US11621437

    申请日：2007-01-09

    申请人： Takeshi Iwai ,  Naotaka Kubota ,  Satoshi Fujimura ,  Miwa Miyairi ,  Hideo Hada

    发明人： Takeshi Iwai ,  Naotaka Kubota ,  Satoshi Fujimura ,  Miwa Miyairi ,  Hideo Hada

    IPC分类号： G03F7/004 ,  G03F7/30

    CPC分类号： G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

    摘要： A positive type resin composition comprising (A) a resin component comprising within the principal chain a structural unit derived from a (meth)acrylate ester and incorporating an acid dissociable, dissolution inhibiting group containing a polycyclic group on an ester side chain section, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent, wherein the component (A) comprises both a structural unit derived from a methacrylate ester and a structural unit derived from an acrylate ester. According to such a resist composition, a resist pattern can be formed which displays little surface roughness and line edge roughness on etching, and also offers excellent resolution and a wide depth of focus range.

    摘要翻译： 一种正型树脂组合物，其包含（A）树脂组分，其在所述主链内包含衍生自（甲基）丙烯酸酯的结构单元，并且在酯侧链部分上并入含有多环基团的酸解离的溶解抑制基团， 在碱的作用下，碱的溶解度增加，（B）暴露时产生酸的酸产生剂组分和（C）有机溶剂，其中组分（A）包含衍生自甲基丙烯酸酯的结构单元和 衍生自丙烯酸酯的结构单元。 根据这样的抗蚀剂组合物，可以形成抗蚀剂图案，其在蚀刻时显示出很小的表面粗糙度和线边缘粗糙度，并且还提供优异的分辨率和宽的焦深范围。