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    Semiconductor laser apparatus, semiconductor laser module, optical transmitter and wavelength division multiplexing communication system
    1.
    发明授权
    Semiconductor laser apparatus, semiconductor laser module, optical transmitter and wavelength division multiplexing communication system 有权

    公开(公告)号：US06650667B2

    公开(公告)日：2003-11-18

    申请号：US09858330

    申请日：2001-05-15

    申请人： Hideyuki Nasu ,  Sumio Sugata

    发明人： Hideyuki Nasu ,  Sumio Sugata

    IPC分类号： H01S3131

    CPC分类号： H01S5/0687 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/02446 ,  H01S5/06837

    摘要： A semiconductor laser apparatus comprises a light-emitting portion including a light-emitting device for outputting a laser beam, a light-receiving element for receiving the laser beam outputted from said light-emitting device, a wavelength monitoring portion including an optical system disposed between said light-emitting device and said light-receiving element, a control portion for controlling the wavelength of the laser beam outputted from said light-emitting device by controlling the temperature of said light-emitting device based on the wavelength of the laser beam detected by said wavelength monitoring portion, an optical isolator disposed on the optical path between said light-emitting device and said wavelength monitoring portion for preventing the light from returning from said wavelength monitoring portion back to said light-emitting device, and a temperature regulating portion for independently controlling the temperatures of said light-emitting portion and wavelength monitoring portion.

    Semiconductor laser device featuring group III and IV compounds doped with amphoteric impurity to vary electrical resistance according to direction of crystal plane
    2.
    发明授权
    Semiconductor laser device featuring group III and IV compounds doped with amphoteric impurity to vary electrical resistance according to direction of crystal plane 失效
    半导体激光器件具有掺杂有两性杂质的III和IV族化合物，以根据晶面的方向改变电阻

    公开(公告)号：US5375137A

    公开(公告)日：1994-12-20

    申请号：US932181

    申请日：1992-08-21

    申请人： Yoshiyuki Hirayama ,  Hitoshi Shimizu ,  Sumio Sugata

    发明人： Yoshiyuki Hirayama ,  Hitoshi Shimizu ,  Sumio Sugata

    IPC分类号： H01L21/203 ,  H01S5/00 ,  H01S5/223 ,  H01S5/30 ,  H01S3/19

    CPC分类号： H01L33/305 ,  H01S5/305 ,  H01S5/2231 ,  H01S5/3081

    摘要： There is provided a high-quality semiconductor laser device having a current confinement feature along with a method of manufacturing the same in a simple manner. The upper clad layer 4 of a semiconductor laser device is a semiconductive layer made of a compound of elements of the III and V groups doped with an amphoteric impurity substance and the electric resistance of the lateral slopes is greater on the top of the mesa than on the upper clad layer 4 of the mesa. A method of manufacturing a semiconductor laser device comprises a step of repeating a cycle of crystal growth operation of sequentially forming a layer of an element of the III group, a layer of an amphoteric impurity substance and a layer of an element of the V group on said substrate by means of an MBE technique to produce said upper clad layer made of a compound of elements of the III and V groups.

    摘要翻译： 提供了具有电流限制特征的高质量半导体激光器件及其制造方法。 半导体激光器件的上覆层4是由掺杂有两性杂质物质的III族和V族元素的化合物制成的半导电层，并且在台面顶部的横向斜率的电阻大于在 台面的上包层4。 一种制造半导体激光器件的方法包括以下步骤：重复一个循环的晶体生长操作，顺序地形成III族元素层，两性杂质物质层和V族元素层 所述衬底通过MBE技术产生由III族和V族元素的化合物制成的所述上覆层。