公开(公告)号：US20100012993A1

公开(公告)日：2010-01-21

申请号：US12504136

申请日：2009-07-16

申请人： Hirofumi YAMASHITA ,  Junji Naruse

发明人： Hirofumi YAMASHITA ,  Junji Naruse

IPC分类号： H01L27/146

CPC分类号： H04N5/37457 ,  H04N5/3741

摘要： A solid-state imaging device includes a photodiode array having a plurality of photodiodes, read transistors each having one terminal and the other terminal of a current path, one terminal of the current path being connected to each of four photodiodes corresponding to two photodiodes adjacent in a row direction and two photodiodes adjacent in a column direction, the other terminal of the current path being connected in common to a first node, the first node provided as a set of four photodiodes being in a floating-state, read control lines to connect the gate of the read transistor corresponding to each set of the read transistors in common, and independently supplied with a read signal, and vertical signal lines supplied with a signal converted by two photodiodes adjacent in a row direction of the photodiodes for an independent period within one horizontal blanking period of image scanning.

摘要翻译： 固态成像装置包括具有多个光电二极管的光电二极管阵列，每个具有一个端子的读取晶体管和电流路径的另一个端子，电流路径的一个端子连接到与两个相邻的两个光电二极管相对应的四个光电二极管中的每一个 行方向和在列方向上相邻的两个光电二极管，电流路径的另一端共同连接到第一节点，第一节点被设置为一组四个光电二极管，处于浮置状态，读取控制线连接 读取晶体管的栅极对应于读取晶体管的每一组，并且独立地提供读取信号，以及垂直信号线，被提供有由在光电二极管的行方向上相邻的两个光电二极管转换的信号在独立时段内 图像扫描的一个水平消隐期。

公开(公告)号：US08319873B2

公开(公告)日：2012-11-27

申请号：US12504136

申请日：2009-07-16

申请人： Hirofumi Yamashita ,  Junji Naruse

发明人： Hirofumi Yamashita ,  Junji Naruse

IPC分类号： H04N5/335

CPC分类号： H04N5/37457 ,  H04N5/3741

摘要： A solid-state imaging device includes a photodiode array having a plurality of photodiodes, read transistors each having one terminal and the other terminal of a current path, one terminal of the current path being connected to one of four photodiodes corresponding to two photodiodes adjacent in a row direction and two photodiodes adjacent in a column direction, the other terminal of the current path being connected in common to a first node, the first node provided as a set of four photodiodes being in a floating-state, read control lines to connect the gate of the read transistor corresponding to each set of the read transistors in common, and independently supplied with a read signal, and vertical signal lines supplied with a signal converted by two photodiodes adjacent in a row direction of the photodiodes for an independent period within one horizontal blanking period of image scanning.

摘要翻译： 固体摄像器件包括具有多个光电二极管的光电二极管阵列，每个具有一个端子的读取晶体管和电流路径的另一个端子，电流路径的一个端子连接到与两个相邻的两个光电二极管相对应的四个光电二极管中的一个 行方向和在列方向上相邻的两个光电二极管，电流路径的另一端共同连接到第一节点，第一节点被设置为一组四个光电二极管，处于浮置状态，读取控制线连接 读取晶体管的栅极对应于读取晶体管的每一组，并且独立地提供读取信号，以及垂直信号线，被提供有由在光电二极管的行方向上相邻的两个光电二极管转换的信号在独立时段内 图像扫描的一个水平消隐期。

公开(公告)号：US07719591B2

公开(公告)日：2010-05-18

申请号：US11736315

申请日：2007-04-17

申请人： Junji Naruse ,  Nagataka Tanaka

发明人： Junji Naruse ,  Nagataka Tanaka

IPC分类号： H04N5/335

CPC分类号： H04N5/37457 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14641 ,  H01L27/14645

摘要： A solid-state imaging device that suppresses crosstalk of light in a semiconductor substrate that caused by diffraction of light is disclosed. According to one aspect of the present invention, there is provided a solid-state imaging device comprising a plurality of pixels, each pixel comprising a photoelectric conversion element that is provided in a semiconductor substrate and performs photoelectric conversion of incident light to store signal charges, a floating junction that is provided in the semiconductor substrate in the proximity of the photoelectric conversion element and temporarily stores signal charges, and a transfer transistor that transfers the signal charges stored in the photoelectric conversion element to the floating junction, wherein at least one transfer transistor includes a gate electrode extended to cover a corresponding photoelectric conversion element.

摘要翻译： 公开了抑制由光的衍射引起的半导体衬底中的光的串扰的固态成像装置。 根据本发明的一个方面，提供了一种包括多个像素的固态成像装置，每个像素包括设置在半导体衬底中并执行入射光的光电转换以存储信号电荷的光电转换元件， 在所述光电转换元件附近设置在所述半导体衬底中并临时存储信号电荷的浮置接点，以及将存储在所述光电转换元件中的信号电荷传送到所述浮置结的转移晶体管，其中至少一个转移晶体管 包括延伸以覆盖对应的光电转换元件的栅电极。

公开(公告)号：US20070247537A1

公开(公告)日：2007-10-25

申请号：US11736315

申请日：2007-04-17

申请人： Junji Naruse ,  Nagataka Tanaka

发明人： Junji Naruse ,  Nagataka Tanaka

IPC分类号： H04N5/335

CPC分类号： H04N5/37457 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14641 ,  H01L27/14645

摘要： A solid-state imaging device that suppresses crosstalk of light in a semiconductor substrate that caused by diffraction of light is disclosed. According to one aspect of the present invention, there is provided a solid-state imaging device comprising a plurality of pixels, each pixel comprising a photoelectric conversion element that is provided in a semiconductor substrate and performs photoelectric conversion of incident light to store signal charges, a floating junction that is provided in the semiconductor substrate in the proximity of the photoelectric conversion element and temporarily stores signal charges, and a transfer transistor that transfers the signal charges stored in the photoelectric conversion element to the floating junction, wherein at least one transfer transistor includes a gate electrode extended to cover a corresponding photoelectric conversion element.

摘要翻译： 公开了抑制由光的衍射引起的半导体衬底中的光的串扰的固态成像装置。 根据本发明的一个方面，提供了一种包括多个像素的固态成像装置，每个像素包括设置在半导体衬底中并执行入射光的光电转换以存储信号电荷的光电转换元件， 在所述光电转换元件附近设置在所述半导体衬底中并临时存储信号电荷的浮置接点，以及将存储在所述光电转换元件中的信号电荷传送到所述浮置结的转移晶体管，其中至少一个转移晶体管 包括延伸以覆盖对应的光电转换元件的栅电极。

公开(公告)号：US08508640B2

公开(公告)日：2013-08-13

申请号：US12970160

申请日：2010-12-16

申请人： Junji Naruse ,  Nagataka Tanaka

发明人： Junji Naruse ,  Nagataka Tanaka

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14689 ,  H04N5/2253 ,  H04N5/2254 ,  H04N5/35563 ,  H04N5/374 ,  H04N5/37457 ,  H04N9/045

摘要： According to one embodiment, a back side illumination type solid-state imaging device includes an imaging area in which a plurality of unit pixels each including a photoelectric conversion section and a signal scan circuit section are arranged on a semiconductor substrate, and a light illumination surface formed on a surface of the semiconductor substrate located opposite a surface of the semiconductor substrate on which the signal scan circuit section is formed, wherein the unit pixel comprises a high-sensitivity pixel and a low-sensitivity pixel with a lower sensitivity than the high-sensitivity pixel. And each of the high-sensitivity pixel and the low-sensitivity element comprises a first pixel separation layer located on the light illumination surface side in the semiconductor substrate to separate the pixels from each other.

摘要翻译： 根据一个实施例，背面照明型固态成像装置包括其中在半导体衬底上布置有包括光电转换部分和信号扫描电路部分的多个单位像素的成像区域，以及光照明表面 形成在与形成有所述信号扫描电路部的所述半导体基板的表面相对的所述半导体基板的表面上，所述单位像素包括高灵敏度像素和低灵敏度的低灵敏度像素， 灵敏度像素。 并且高敏感度像素和低灵敏度元件中的每一个包括位于半导体衬底中的光照明表面侧上的第一像素分离层，以将像素彼此分离。

公开(公告)号：US20110141333A1

公开(公告)日：2011-06-16

申请号：US12970160

申请日：2010-12-16

申请人： Junji Naruse ,  Nagataka Tanaka

发明人： Junji Naruse ,  Nagataka Tanaka

IPC分类号： H04N5/335 ,  H01L31/0232

CPC分类号： H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14689 ,  H04N5/2253 ,  H04N5/2254 ,  H04N5/35563 ,  H04N5/374 ,  H04N5/37457 ,  H04N9/045

摘要： According to one embodiment, a back side illumination type solid-state imaging device includes an imaging area in which a plurality of unit pixels each including a photoelectric conversion section and a signal scan circuit section are arranged on a semiconductor substrate, and a light illumination surface formed on a surface of the semiconductor substrate located opposite a surface of the semiconductor substrate on which the signal scan circuit section is formed, wherein the unit pixel comprises a high-sensitivity pixel and a low-sensitivity pixel with a lower sensitivity than the high-sensitivity pixel. And each of the high-sensitivity pixel and the low-sensitivity element comprises a first pixel separation layer located on the light illumination surface side in the semiconductor substrate to separate the pixels from each other.

摘要翻译： 根据一个实施例，背面照明型固态成像装置包括其中在半导体衬底上布置有包括光电转换部分和信号扫描电路部分的多个单位像素的成像区域，以及光照明表面 形成在与形成有所述信号扫描电路部的所述半导体基板的表面相对的所述半导体基板的表面上，所述单位像素包括高灵敏度像素和低灵敏度的低灵敏度像素， 灵敏度像素。 并且高敏感度像素和低灵敏度元件中的每一个包括位于半导体衬底中的光照明表面侧上的第一像素分离层，以将像素彼此分离。