公开(公告)号：US20110141333A1

公开(公告)日：2011-06-16

申请号：US12970160

申请日：2010-12-16

申请人： Junji Naruse ,  Nagataka Tanaka

发明人： Junji Naruse ,  Nagataka Tanaka

IPC分类号： H04N5/335 ,  H01L31/0232

CPC分类号： H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14689 ,  H04N5/2253 ,  H04N5/2254 ,  H04N5/35563 ,  H04N5/374 ,  H04N5/37457 ,  H04N9/045

摘要： According to one embodiment, a back side illumination type solid-state imaging device includes an imaging area in which a plurality of unit pixels each including a photoelectric conversion section and a signal scan circuit section are arranged on a semiconductor substrate, and a light illumination surface formed on a surface of the semiconductor substrate located opposite a surface of the semiconductor substrate on which the signal scan circuit section is formed, wherein the unit pixel comprises a high-sensitivity pixel and a low-sensitivity pixel with a lower sensitivity than the high-sensitivity pixel. And each of the high-sensitivity pixel and the low-sensitivity element comprises a first pixel separation layer located on the light illumination surface side in the semiconductor substrate to separate the pixels from each other.

摘要翻译： 根据一个实施例，背面照明型固态成像装置包括其中在半导体衬底上布置有包括光电转换部分和信号扫描电路部分的多个单位像素的成像区域，以及光照明表面 形成在与形成有所述信号扫描电路部的所述半导体基板的表面相对的所述半导体基板的表面上，所述单位像素包括高灵敏度像素和低灵敏度的低灵敏度像素， 灵敏度像素。 并且高敏感度像素和低灵敏度元件中的每一个包括位于半导体衬底中的光照明表面侧上的第一像素分离层，以将像素彼此分离。

公开(公告)号：US07719591B2

公开(公告)日：2010-05-18

申请号：US11736315

申请日：2007-04-17

申请人： Junji Naruse ,  Nagataka Tanaka

发明人： Junji Naruse ,  Nagataka Tanaka

IPC分类号： H04N5/335

CPC分类号： H04N5/37457 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14641 ,  H01L27/14645

摘要： A solid-state imaging device that suppresses crosstalk of light in a semiconductor substrate that caused by diffraction of light is disclosed. According to one aspect of the present invention, there is provided a solid-state imaging device comprising a plurality of pixels, each pixel comprising a photoelectric conversion element that is provided in a semiconductor substrate and performs photoelectric conversion of incident light to store signal charges, a floating junction that is provided in the semiconductor substrate in the proximity of the photoelectric conversion element and temporarily stores signal charges, and a transfer transistor that transfers the signal charges stored in the photoelectric conversion element to the floating junction, wherein at least one transfer transistor includes a gate electrode extended to cover a corresponding photoelectric conversion element.

摘要翻译： 公开了抑制由光的衍射引起的半导体衬底中的光的串扰的固态成像装置。 根据本发明的一个方面，提供了一种包括多个像素的固态成像装置，每个像素包括设置在半导体衬底中并执行入射光的光电转换以存储信号电荷的光电转换元件， 在所述光电转换元件附近设置在所述半导体衬底中并临时存储信号电荷的浮置接点，以及将存储在所述光电转换元件中的信号电荷传送到所述浮置结的转移晶体管，其中至少一个转移晶体管 包括延伸以覆盖对应的光电转换元件的栅电极。

公开(公告)号：US20110228149A1

公开(公告)日：2011-09-22

申请号：US13051095

申请日：2011-03-18

申请人： Junji NARUSE ,  Nagataka Tanaka

发明人： Junji NARUSE ,  Nagataka Tanaka

IPC分类号： H04N5/335

CPC分类号： H04N5/35563 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14641

摘要： According to one embodiment, a solid-state imaging device includes a photodiode module in which first photodiodes corresponding to high-sensitivity pixels and second photodiodes corresponding to low-sensitivity pixels are alternately arranged at preset pitch P in a semiconductor substrate, high-sensitivity pixel interconnection lines formed at preset pitch C on the substrate, low-sensitivity pixel interconnection lines that are formed at preset pitch D on the substrate, high-sensitivity pixel color filters formed at preset pitch A on the opposite side of the respective interconnection lines with respect to the substrate, and low-sensitivity pixel interconnection lines that are formed at preset pitch B on the other side of the interconnection lines with respect to the substrate. The relationship between the above pitches is set to D=B

摘要翻译： 根据一个实施例，固态成像装置包括光电二极管模块，其中对应于高灵敏度像素的第一光电二极管和对应于低灵敏度像素的第二光电二极管以预设间距P交替布置在半导体衬底中，高灵敏度像素 在衬底上以预设间距C形成的互连线，以衬底上预设间距D形成的低灵敏度像素互连线，在相应互连线相对侧以预设间距A形成的高灵敏度像素滤色器， 以及相对于基板在互连线的另一侧上以预设间距B形成的低灵敏度像素互连线。 上述间距之间的关系设定为D = B

公开(公告)号：US20070247537A1

公开(公告)日：2007-10-25

申请号：US11736315

申请日：2007-04-17

申请人： Junji Naruse ,  Nagataka Tanaka

发明人： Junji Naruse ,  Nagataka Tanaka

IPC分类号： H04N5/335

CPC分类号： H04N5/37457 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14641 ,  H01L27/14645

摘要： A solid-state imaging device that suppresses crosstalk of light in a semiconductor substrate that caused by diffraction of light is disclosed. According to one aspect of the present invention, there is provided a solid-state imaging device comprising a plurality of pixels, each pixel comprising a photoelectric conversion element that is provided in a semiconductor substrate and performs photoelectric conversion of incident light to store signal charges, a floating junction that is provided in the semiconductor substrate in the proximity of the photoelectric conversion element and temporarily stores signal charges, and a transfer transistor that transfers the signal charges stored in the photoelectric conversion element to the floating junction, wherein at least one transfer transistor includes a gate electrode extended to cover a corresponding photoelectric conversion element.

摘要翻译： 公开了抑制由光的衍射引起的半导体衬底中的光的串扰的固态成像装置。 根据本发明的一个方面，提供了一种包括多个像素的固态成像装置，每个像素包括设置在半导体衬底中并执行入射光的光电转换以存储信号电荷的光电转换元件， 在所述光电转换元件附近设置在所述半导体衬底中并临时存储信号电荷的浮置接点，以及将存储在所述光电转换元件中的信号电荷传送到所述浮置结的转移晶体管，其中至少一个转移晶体管 包括延伸以覆盖对应的光电转换元件的栅电极。

公开(公告)号：US08508640B2

公开(公告)日：2013-08-13

申请号：US12970160

申请日：2010-12-16

申请人： Junji Naruse ,  Nagataka Tanaka

发明人： Junji Naruse ,  Nagataka Tanaka

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14689 ,  H04N5/2253 ,  H04N5/2254 ,  H04N5/35563 ,  H04N5/374 ,  H04N5/37457 ,  H04N9/045

摘要： According to one embodiment, a back side illumination type solid-state imaging device includes an imaging area in which a plurality of unit pixels each including a photoelectric conversion section and a signal scan circuit section are arranged on a semiconductor substrate, and a light illumination surface formed on a surface of the semiconductor substrate located opposite a surface of the semiconductor substrate on which the signal scan circuit section is formed, wherein the unit pixel comprises a high-sensitivity pixel and a low-sensitivity pixel with a lower sensitivity than the high-sensitivity pixel. And each of the high-sensitivity pixel and the low-sensitivity element comprises a first pixel separation layer located on the light illumination surface side in the semiconductor substrate to separate the pixels from each other.

摘要翻译： 根据一个实施例，背面照明型固态成像装置包括其中在半导体衬底上布置有包括光电转换部分和信号扫描电路部分的多个单位像素的成像区域，以及光照明表面 形成在与形成有所述信号扫描电路部的所述半导体基板的表面相对的所述半导体基板的表面上，所述单位像素包括高灵敏度像素和低灵敏度的低灵敏度像素， 灵敏度像素。 并且高敏感度像素和低灵敏度元件中的每一个包括位于半导体衬底中的光照明表面侧上的第一像素分离层，以将像素彼此分离。

公开(公告)号：US08610186B2

公开(公告)日：2013-12-17

申请号：US12883564

申请日：2010-09-16

申请人： Nagataka Tanaka

发明人： Nagataka Tanaka

IPC分类号： H01L31/062

CPC分类号： H01L27/14645 ,  H01L27/14609 ,  H01L27/14621 ,  H04N5/35563 ,  H04N5/37457 ,  H04N9/045 ,  H04N2209/045

摘要： According to one embodiment, a solid-state imaging device includes an area and color filters. The area includes pixels. Each of the pixels includes a first photodiode, a first read transistor, a second photodiode, a second read transistor, a floating diffusion, a reset transistor, and an amplifying transistor. The first photodiode performs photoelectric conversion. The first read transistor reads a signal charge. The second photodiode has a photosensitivity lower than the first photodiode. The second read transistor reads a signal charge. The floating diffusion stores the signal charges. The reset transistor resets a potential of the floating diffusion. The amplifying transistor amplifies the potential of the floating diffusion. The color filters include a first and a second filters. The relationship QSAT1 > QSAT2 is satisfied. When a saturation level of the first filter is denoted by QSAT1 and a saturation level of the second filter is denoted by QSAT2.

摘要翻译： 根据一个实施例，固态成像装置包括区域和滤色器。 该区域包括像素。 每个像素包括第一光电二极管，第一读晶体管，第二光电二极管，第二读晶体管，浮动扩散，复位晶体管和放大晶体管。 第一个光电二极管执行光电转换。 第一个读取晶体管读取一个信号电荷。 第二光电二极管的光敏性低于第一光电二极管。 第二个读取晶体管读取信号电荷。 浮动扩散存储信号电荷。 复位晶体管复位浮动扩散的电位。 放大晶体管放大浮动扩散的电位。 滤色器包括第一和第二滤光片。 满足QSAT1> QSAT2的关系。 当QSAT1表示第一滤波器的饱和电平，并且由QSAT2表示第二滤波器的饱和电平时。

公开(公告)号：US08085326B2

公开(公告)日：2011-12-27

申请号：US11553262

申请日：2006-10-26

申请人： Nagataka Tanaka

发明人： Nagataka Tanaka

IPC分类号： H04N5/208 ,  H04N5/335 ,  H04N3/14

CPC分类号： H04N5/335 ,  H04N5/3559

摘要： A solid imaging device includes a vertical signal line, a unit pixel including a photodiode which photoelectrically converts and stores incident light, an amplifying transistor which amplifies an input signal from the photodiode and outputs the amplified signal to the vertical signal line, and a reset transistor which resets a potential of a control electrode of the amplifying transistor, and a control circuit configured to maintain a state of a potential of the vertical signal line while the reset transistor is being driven.

摘要翻译： 固体成像装置包括垂直信号线，包括光电转换和存储入射光的光电二极管的单位像素，放大来自光电二极管的输入信号的放大晶体管，并将放大的信号输出到垂直信号线;以及复位晶体管 其复位放大晶体管的控制电极的电位，以及控制电路，被配置为在复位晶体管被驱动的同时保持垂直信号线的电位的状态。

公开(公告)号：US07554141B2

公开(公告)日：2009-06-30

申请号：US11392616

申请日：2006-03-30

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

IPC分类号： H01L31/00 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.

摘要翻译： 一种固态摄像装置，包括：半导体衬底，其包括含有P型杂质的衬底主体和包含N型杂质的第一N型半导体层，所述第一N型半导体层设置在所述衬底主体上;以及 包括含有p型杂质的第一P型半导体层，其位于基板主体上，多个光电转换部分由第二N型半导体层形成，该第二N型半导体层在相应位置彼此独立地设置 在第一N型半导体层的表面部分和形成为围绕光/电转换部分的多个第二P型半导体层，其沿着设置在表面部分中的各个位置的元件隔离区域设置 的第一N型半导体层，并且从第一N型半导体的表面部分连续地延伸 层到第一P型半导体层的表面部分。

公开(公告)号：US20060219867A1

公开(公告)日：2006-10-05

申请号：US11392616

申请日：2006-03-30

申请人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

发明人： Tetsuya Yamaguchi ,  Hiroshige Goto ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Ikuko Inoue ,  Nagataka Tanaka

IPC分类号： H01L27/00 ,  H01L31/00

CPC分类号： H01L27/14689 ,  H01L27/1463

摘要： A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.

公开(公告)号：US20060187553A1

公开(公告)日：2006-08-24

申请号：US11358410

申请日：2006-02-22

申请人： Nagataka Tanaka ,  Masatoki Nakabayashi ,  Kenichi Nakamura

发明人： Nagataka Tanaka ,  Masatoki Nakabayashi ,  Kenichi Nakamura

IPC分类号： G02B27/10

CPC分类号： H01L27/14627 ,  H01L27/14625 ,  H01L27/14685

摘要： A solid-state imaging device includes a plurality of photo receivers arranged in a two-dimensional array on a semiconductor substrate, the photo receivers receiving exit light from an imaging optical system; and a plurality of condensing lenses arranged over the said plurality of photo receivers, respectively. At least either the plurality of condensing lenses or the plurality of photo receivers are arranged at smaller pitches where an absolute value of an exit pupil position in the imaging optical system is large and at greater pitches where the absolute value of the exit pupil position is small.