Semiconductor light emitting element, method for producing semiconductor light emitting element and light emitting device
    1.
    发明授权
    Semiconductor light emitting element, method for producing semiconductor light emitting element and light emitting device 有权
    半导体发光元件,半导体发光元件的制造方法以及发光元件

    公开(公告)号:US08916904B2

    公开(公告)日:2014-12-23

    申请号:US13752781

    申请日:2013-01-29

    摘要: In a semiconductor light emitting element having a sapphire substrate, and a lower semiconductor layer and an upper semiconductor layer laminated on the sapphire substrate, the sapphire substrate includes a substrate top surface, a substrate bottom surface, first substrate side surfaces and second substrate side surfaces; plural first cutouts and plural second cutouts are provided at border portions between the first substrate side surface and the substrate top surface and between the second substrate side surface and the substrate top surface; the lower semiconductor layer includes a lower semiconductor bottom surface, a lower semiconductor top surface, first lower semiconductor side surfaces and second lower semiconductor side surfaces; plural first projecting portions and plural first depressing portions are provided on the first lower semiconductor side surface; and plural second protruding portions and second flat portions are provided on the second lower semiconductor side surface.

    摘要翻译: 在具有蓝宝石衬底的半导体发光元件和层叠在蓝宝石衬底上的下半导体层和上半导体层的蓝宝石衬底包括衬底顶表面,衬底底表面,第一衬底侧表面和第二衬底侧表面 ; 多个第一切口和多个第二切口设置在第一基板侧表面和基板顶表面之间以及第二基板侧表面和基板顶表面之间的边界部分处; 下半导体层包括下半导体底表面,下半导体顶表面,第一下半导体侧表面和第二下半导体侧表面; 多个第一突出部分和多个第一按压部分设置在第一下半导体侧表面上; 并且多个第二突出部分和第二平坦部分设置在第二下部半导体侧表面上。