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1.发明授权
公开(公告)号：US4904569A
公开(公告)日：1990-02-27
申请号：US144065
申请日：1988-01-15
申请人： Hiroshi Fukuda , Norio Hasegawa , Toshihiko Tanaka , Toshiei Kurosaki , Saburo Nonogaki , Yoshio Taniguchi , Toshiharu Matsuzawa
发明人： Hiroshi Fukuda , Norio Hasegawa , Toshihiko Tanaka , Toshiei Kurosaki , Saburo Nonogaki , Yoshio Taniguchi , Toshiharu Matsuzawa
IPC分类号： G03F7/20
CPC分类号： G03F7/70575 , G03F7/2022 , G03F7/70241 , G03F7/70333 , G03F7/70858
摘要： An area on a photoresist film which is formed on a substrate surface having a topography, is exposed a plurality of times in such a manner that the image plane of a mask pattern is formed at a plurality of positions which are spaced apart from a reference plane in the substrate in the direction of an optical axis, and then the photoresist film is developed to form a resist pattern. According to the above method, the effective focal depth of the projection aligner used is enhanced, and moreover the reduction of the image contrast at the photoresist film is made very small by the plural exposure operations. Accordingly, a fine pattern can be formed accurately on the substrate surface having the topography.
摘要翻译： 在具有形貌的基板表面上形成的光致抗蚀剂膜上的区域被曝光多次，使得掩模图案的像平面形成在与参考平面间隔开的多个位置 在光轴方向上的基板中，然后使光致抗蚀剂膜显影以形成抗蚀剂图案。 根据上述方法，增强了所使用的投影对准器的有效焦深，并且通过多次曝光操作使得光致抗蚀剂膜上的图像对比度的降低非常小。 因此，可以在具有形貌的基板表面上精确地形成精细图案。
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公开(公告)号：US5235400A
公开(公告)日：1993-08-10
申请号：US418525
申请日：1989-10-10
IPC分类号： G01N21/45 , G01N21/956 , G03F7/20
CPC分类号： G03F7/70866 , G01N21/956 , G01N21/45
摘要： A method of and an apparatus for detecting a defect on a phase-shifting mask for use in a projection aligner in which either or both of respective intensities of transmitted and reflected light beams from the mask illuminated with light are used for detecting a defect on the mask.
摘要翻译： 一种用于检测用于投影对准器的相移掩模上的缺陷的方法和装置，其中使用由光照射的掩模的透射和反射光束的各个强度中的任一个或两个来检测 面具。
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3.发明授权
公开(公告)号：US4992825A
公开(公告)日：1991-02-12
申请号：US369150
申请日：1989-06-21
IPC分类号： G03F7/20
CPC分类号： G03F7/70575 , G03F7/2022 , G03F7/70241 , G03F7/70333 , G03F7/70858
摘要： An area on a photoresist film which is formed on a substrate surface having a topography, is exposed a plurality of times in such a manner that the image plane of a mask pattern is formed at a plurality of positions which are spaced apart from a reference plane in the substrate in the direction of an optical axis, and then the photoresist film is developed to form a resist pattern. According to the above method, the effective focal depth of the projection aligner used is enhanced, and moreover the reduction of the image contrast at the photoresist film is very small by the plural exposure operations. Accordingly, a fine pattern can be formed accurately on the substrate surface having the topography.
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4.再颁专利
公开(公告)号：USRE36731E
公开(公告)日：2000-06-13
申请号：US190580
申请日：1994-02-02
CPC分类号： G03F7/70575 , G03F7/2022 , G03F7/70241 , G03F7/70333 , G03F7/70858
摘要： An area on a photoresist film which is formed on a substrate surface having a topography, is exposed a plurality of times in such a manner that the image plane of a mask pattern is formed at a plurality of positions which are spaced apart from a reference plane in the substrate in the direction of an optical axis, and then the photoresist film is developed to form a resist pattern. According to the above method, the effective focal depth of the projection aligner used is enhanced, and moreover the reduction of the image contrast at the photoresist film is very small by the plural exposure operations. Accordingly, a fine pattern can be formed accurately on the substrate surface having the topography.
摘要翻译： 在具有形貌的基板表面上形成的光致抗蚀剂膜上的区域被曝光多次，使得掩模图案的像面形成在与参考平面间隔开的多个位置 在光轴方向上的基板中，然后使光致抗蚀剂膜显影以形成抗蚀剂图案。 根据上述方法，增强了所使用的投影对准器的有效焦深，并且通过多次曝光操作，光致抗蚀剂膜的图像对比度的降低非常小。 因此，可以在具有形貌的基板表面上精确地形成精细图案。
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5.发明授权
公开(公告)号：US4869999A
公开(公告)日：1989-09-26
申请号：US83211
申请日：1987-08-10
IPC分类号： G03F7/20
CPC分类号： G03F7/70575 , G03F7/2022 , G03F7/70241 , G03F7/70333 , G03F7/70858
摘要： An area on a photoresist film which is formed on a substrate surface having a topography, is exposed a plurality of times in such a manner that the image plane of a mask pattern is formed at a plurality of positions which are spaced apart from a reference plane in the substrate in the direction of an optical axis, and then the photoresist film is developed to form a resist pattern. According to the above method, the effective focal depth of the projection aligner used is enhanced, and moreover the reduction of the image contrast at the photoresist film is very small by the plural exposure operations. Accordingly, a fine pattern can be formed accurately on the substrate surface having the topography.
摘要翻译： 在具有形貌的基板表面上形成的光致抗蚀剂膜上的区域被曝光多次，使得掩模图案的像面形成在与参考平面间隔开的多个位置 在光轴方向上的基板中，然后使光致抗蚀剂膜显影以形成抗蚀剂图案。 根据上述方法，增强了所使用的投影对准器的有效焦深，并且通过多次曝光操作，光致抗蚀剂膜的图像对比度的降低非常小。 因此，可以在具有形貌的基板表面上精确地形成精细图案。
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公开(公告)号：US5656397A
公开(公告)日：1997-08-12
申请号：US282543
申请日：1994-07-29
申请人： Akira Imai , Norio Hasegawa , Hiroshi Fukuda , Toshihiko Tanaka
发明人： Akira Imai , Norio Hasegawa , Hiroshi Fukuda , Toshihiko Tanaka
摘要： There is disclosed a mask which includes a first phase shifter layer and a second phase shifter layer formed on the first phase shifter layer and has a structure capable of easily effecting highly precise control of the phase of exposure light and correction for a defect in the phase shifter layers. There are also disclosed a method of manufacturing the mask and a method of forming by use of the mask a pattern which has a smaller local error in pattern dimension and is free of a defect.
摘要翻译： 公开了一种掩模，其包括形成在第一移相器层上的第一移相器层和第二移相器层，并且具有能够容易地实现对曝光光的相位的高度精确控制和对相的缺陷进行校正的结构 移位层。 还公开了一种制造掩模的方法以及通过使用掩模形成图案的图案尺寸较小的局部误差并且没有缺陷的图案的方法。
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公开(公告)号：US5328807A
公开(公告)日：1994-07-12
申请号：US711954
申请日：1991-06-07
申请人： Toshihiko Tanaka , Norio Hasegawa , Toshiaki Yamanaka , Akira Imai , Hiroshi Shiraishi , Takumi Ueno , Hiroshi Fukuda
发明人： Toshihiko Tanaka , Norio Hasegawa , Toshiaki Yamanaka , Akira Imai , Hiroshi Shiraishi , Takumi Ueno , Hiroshi Fukuda
CPC分类号： G03F1/34 , G03F7/2022
摘要： A comb-like or dot-like phase shifter pattern is added to a phase shifter used in phase shifting mask technology, which is then exposed onto a wafer. This enables the formation of extremely fine line patterns or space patterns having widths different from each other simultaneously. Further, when two reticles are disposed such that phase shifter patterns disposed therein intersect each other and are exposed consecutively onto a wafer, a fine hole pattern or dot pattern can be formed at a position where the phase shifter patterns intersect each other.
摘要翻译： 将梳状或点状移相器图案添加到用于相移掩模技术的移相器中，然后将其暴露在晶片上。 这使得能够同时形成彼此宽度不同的极细线图案或空间图案。 此外，当两个掩模版被布置成使得设置在其中的移相器图案彼此相交并且连续地暴露在晶片上时，可以在移相器图案彼此相交的位置处形成细孔图案或点图案。
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公开(公告)号：US4937619A
公开(公告)日：1990-06-26
申请号：US307513
申请日：1989-02-08
申请人： Hiroshi Fukuda , Norio Hasegawa , Toshihiko Tanaka
发明人： Hiroshi Fukuda , Norio Hasegawa , Toshihiko Tanaka
IPC分类号： G03F7/20
CPC分类号： G03F7/70575 , G03F7/70241 , G03F7/70333 , G03F7/70858
摘要： There are disclosed a projection aligner, and an exposure method, capable of largely increasing the effective focus latitude of a fine pattern by using light having a plurality of different wavelengths to perform projection exposure and by setting a plurality of focal planes on an identical optical axis by means of chromatic aberration of the projection lens. The present invention makes it possible to cope with insufficient depth of focus caused by a shortened wavelength of exposure light, an increased numerical aperture of the projection lens, increased uneven topography of the substrate surface incurred from the device structure formed in three dimensions, inclination of the substrate, and field curvature of the projection lens, for example.
摘要翻译： 公开了一种投影对准器和曝光方法，其能够通过使用具有多个不同波长的光来大幅提高精细图案的有效焦点宽度，以进行投影曝光，并通过在相同的光轴上设置多个焦平面 通过投影透镜的色差。 本发明使得可以应对由于曝光光的波长缩短引起的焦点不足，投影透镜的数值孔径的增加，从三维形成的元件结构引起的衬底表面的不均匀的形貌的增加， 基板和投影透镜的场曲率。
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公开(公告)号：US5885735A
公开(公告)日：1999-03-23
申请号：US834542
申请日：1997-03-31
申请人： Akira Imai , Norio Hasegawa , Hiroshi Fukuda , Toshihiko Tanaka
发明人： Akira Imai , Norio Hasegawa , Hiroshi Fukuda , Toshihiko Tanaka
摘要： There is disclosed a mask which includes a first phase shifter layer and a second phase shifter layer formed on the first phase shifter layer and has a structure capable of easily effecting highly precise control of the phase of exposure light and correction for a defect in the phase shifter layers. There are also disclosed a method of manufacturing the mask and a method of forming by use of the mask a pattern which has a smaller local error in pattern dimension and is free of a defect.
摘要翻译： 公开了一种掩模，其包括形成在第一移相器层上的第一移相器层和第二移相器层，并且具有能够容易地实现对曝光光的相位的高度精确控制和对相的缺陷进行校正的结构 移位层。 还公开了一种制造掩模的方法以及通过使用掩模形成图案的图案尺寸较小的局部误差并且没有缺陷的图案的方法。
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公开(公告)号：US5362591A
公开(公告)日：1994-11-08
申请号：US593808
申请日：1990-10-05
申请人： Akira Imai , Norio Hasegawa , Hiroshi Fukuda , Toshihiko Tanaka
发明人： Akira Imai , Norio Hasegawa , Hiroshi Fukuda , Toshihiko Tanaka
摘要： There is disclosed a mask which includes a first phase shifter layer and a second phase shifter layer formed on the first phase shifter layer and has a structure capable of easily effecting highly precise control of the phase of exposure light and correction for a defect in the phase shifter layers. There are also disclosed a method of manufacturing the mask and a method of forming by use of the mask a pattern which has a smaller local error in pattern dimension and is free of a defect.
摘要翻译： 公开了一种掩模，其包括形成在第一移相器层上的第一移相器层和第二移相器层，并且具有能够容易地实现对曝光光的相位的高度精确控制和对相的缺陷进行校正的结构 移位层。 还公开了一种制造掩模的方法以及通过使用掩模形成图案的图案尺寸较小的局部误差并且没有缺陷的图案的方法。
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