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公开(公告)号：US5235400A
公开(公告)日：1993-08-10
申请号：US418525
申请日：1989-10-10
IPC分类号： G01N21/45 , G01N21/956 , G03F7/20
CPC分类号： G03F7/70866 , G01N21/956 , G01N21/45
摘要： A method of and an apparatus for detecting a defect on a phase-shifting mask for use in a projection aligner in which either or both of respective intensities of transmitted and reflected light beams from the mask illuminated with light are used for detecting a defect on the mask.
摘要翻译： 一种用于检测用于投影对准器的相移掩模上的缺陷的方法和装置，其中使用由光照射的掩模的透射和反射光束的各个强度中的任一个或两个来检测 面具。
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2.发明授权
公开(公告)号：US4992825A
公开(公告)日：1991-02-12
申请号：US369150
申请日：1989-06-21
IPC分类号： G03F7/20
CPC分类号： G03F7/70575 , G03F7/2022 , G03F7/70241 , G03F7/70333 , G03F7/70858
摘要： An area on a photoresist film which is formed on a substrate surface having a topography, is exposed a plurality of times in such a manner that the image plane of a mask pattern is formed at a plurality of positions which are spaced apart from a reference plane in the substrate in the direction of an optical axis, and then the photoresist film is developed to form a resist pattern. According to the above method, the effective focal depth of the projection aligner used is enhanced, and moreover the reduction of the image contrast at the photoresist film is very small by the plural exposure operations. Accordingly, a fine pattern can be formed accurately on the substrate surface having the topography.
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3.发明授权
公开(公告)号：US4904569A
公开(公告)日：1990-02-27
申请号：US144065
申请日：1988-01-15
申请人： Hiroshi Fukuda , Norio Hasegawa , Toshihiko Tanaka , Toshiei Kurosaki , Saburo Nonogaki , Yoshio Taniguchi , Toshiharu Matsuzawa
发明人： Hiroshi Fukuda , Norio Hasegawa , Toshihiko Tanaka , Toshiei Kurosaki , Saburo Nonogaki , Yoshio Taniguchi , Toshiharu Matsuzawa
IPC分类号： G03F7/20
CPC分类号： G03F7/70575 , G03F7/2022 , G03F7/70241 , G03F7/70333 , G03F7/70858
摘要： An area on a photoresist film which is formed on a substrate surface having a topography, is exposed a plurality of times in such a manner that the image plane of a mask pattern is formed at a plurality of positions which are spaced apart from a reference plane in the substrate in the direction of an optical axis, and then the photoresist film is developed to form a resist pattern. According to the above method, the effective focal depth of the projection aligner used is enhanced, and moreover the reduction of the image contrast at the photoresist film is made very small by the plural exposure operations. Accordingly, a fine pattern can be formed accurately on the substrate surface having the topography.
摘要翻译： 在具有形貌的基板表面上形成的光致抗蚀剂膜上的区域被曝光多次，使得掩模图案的像平面形成在与参考平面间隔开的多个位置 在光轴方向上的基板中，然后使光致抗蚀剂膜显影以形成抗蚀剂图案。 根据上述方法，增强了所使用的投影对准器的有效焦深，并且通过多次曝光操作使得光致抗蚀剂膜上的图像对比度的降低非常小。 因此，可以在具有形貌的基板表面上精确地形成精细图案。
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4.再颁专利
公开(公告)号：USRE36731E
公开(公告)日：2000-06-13
申请号：US190580
申请日：1994-02-02
CPC分类号： G03F7/70575 , G03F7/2022 , G03F7/70241 , G03F7/70333 , G03F7/70858
摘要： An area on a photoresist film which is formed on a substrate surface having a topography, is exposed a plurality of times in such a manner that the image plane of a mask pattern is formed at a plurality of positions which are spaced apart from a reference plane in the substrate in the direction of an optical axis, and then the photoresist film is developed to form a resist pattern. According to the above method, the effective focal depth of the projection aligner used is enhanced, and moreover the reduction of the image contrast at the photoresist film is very small by the plural exposure operations. Accordingly, a fine pattern can be formed accurately on the substrate surface having the topography.
摘要翻译： 在具有形貌的基板表面上形成的光致抗蚀剂膜上的区域被曝光多次，使得掩模图案的像面形成在与参考平面间隔开的多个位置 在光轴方向上的基板中，然后使光致抗蚀剂膜显影以形成抗蚀剂图案。 根据上述方法，增强了所使用的投影对准器的有效焦深，并且通过多次曝光操作，光致抗蚀剂膜的图像对比度的降低非常小。 因此，可以在具有形貌的基板表面上精确地形成精细图案。
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5.发明授权
公开(公告)号：US4869999A
公开(公告)日：1989-09-26
申请号：US83211
申请日：1987-08-10
IPC分类号： G03F7/20
CPC分类号： G03F7/70575 , G03F7/2022 , G03F7/70241 , G03F7/70333 , G03F7/70858
摘要： An area on a photoresist film which is formed on a substrate surface having a topography, is exposed a plurality of times in such a manner that the image plane of a mask pattern is formed at a plurality of positions which are spaced apart from a reference plane in the substrate in the direction of an optical axis, and then the photoresist film is developed to form a resist pattern. According to the above method, the effective focal depth of the projection aligner used is enhanced, and moreover the reduction of the image contrast at the photoresist film is very small by the plural exposure operations. Accordingly, a fine pattern can be formed accurately on the substrate surface having the topography.
摘要翻译： 在具有形貌的基板表面上形成的光致抗蚀剂膜上的区域被曝光多次，使得掩模图案的像面形成在与参考平面间隔开的多个位置 在光轴方向上的基板中，然后使光致抗蚀剂膜显影以形成抗蚀剂图案。 根据上述方法，增强了所使用的投影对准器的有效焦深，并且通过多次曝光操作，光致抗蚀剂膜的图像对比度的降低非常小。 因此，可以在具有形貌的基板表面上精确地形成精细图案。
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6.发明授权Photomask, manufacture of photomask, formation of pattern, manufacture of semiconductor device, and mask pattern design system 失效光掩模，光掩模的制造，图案的形成，半导体器件的制造和掩模图案设计系统
公开(公告)号：US5700601A
公开(公告)日：1997-12-23
申请号：US495836
申请日：1995-06-28
申请人： Norio Hasegawa , Tsuneo Terasawa , Hiroshi Fukuda , Katsuya Hayano , Akira Imai , Akemi Moniwa , Shinji Okazaki
发明人： Norio Hasegawa , Tsuneo Terasawa , Hiroshi Fukuda , Katsuya Hayano , Akira Imai , Akemi Moniwa , Shinji Okazaki
CPC分类号： G03F1/32 , G03F1/26 , G03F1/36 , G03F7/70283 , G03F7/70433
摘要： A photomask used for printing a mask pattern by projection optics, in which a main pattern formed of a transparent area is provided in a semitransparent area formed of a semitransparent film and a phase shifter, and the phase angles of light beams passing through respective areas are different from each other substantially by 180.degree.. The photomask is intended to prevent a reduction in a production yield due to a resolution failure of the photomask, and to prevent generation of an unnecessary projected image. In this photomask, a transparent auxiliary pattern having the same phase angle of light as that of the transparent area is disposed around a main pattern formed of the transparent area, and a distance D between the center or a desired center line of the main pattern and that of the auxiliary pattern satisfies the relationship of D=b.lambda./NAm , where NAm is a mask-side numerical aperture of a projection lens, .lambda. is a wavelength of exposure light, and is a coefficient in the range of 1.35
摘要翻译： 用于通过投影光学器件打印掩模图案的光掩模，其中由透明区域形成的半透明区域设置在由半透明膜和移相器形成的半透明区域中，并且通过各个区域的光束的相位角为 彼此相差180度。 光掩模旨在防止由于光掩模的分辨率故障导致的产量降低，并且防止产生不必要的投影图像。 在该光掩模中，具有与透明区域相同的相位相位角的透明辅助图案设置在由透明区域形成的主图案周围，并且主图案的中心或期望中心线之间的距离D和 辅助图案的图案满足D =bλ/ NAm的关系，其中NAm是投影透镜的掩模侧数值孔径，λ是曝光光的波长，并且b是1.35的范围内的系数
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7.发明授权Method for measuring aberration of projection lens, method for forming patterns, mask, and method for correcting a projection lens 失效用于测量投影透镜的像差的方法，用于形成图案的方法，掩模和用于校正投影透镜的方法公开(公告)号：US06329112B1
公开(公告)日：2001-12-11
申请号：US09438481
申请日：1999-11-12
IPC分类号： G03F900
CPC分类号： G01M11/0264 , G03F7/706
摘要： Optical systems of projection exposure apparatuses may have aberrations, and this fact may hamper the achievement of predetermined accuracy of dimensions and position of a circuit pattern which is necessary to attain desired device performance. Further, because of the difficulty in measuring the above-described aberrations, it was not possible to correct the optical system so as to realize a substantially aberration-free characteristic. The aberrations of a projection lens can be found accurately by steps of: measuring the light intensities of a projected image of a particular pattern on a mask at n different points in the projected image; and solving n simultaneous equations with m (m
摘要翻译： 投影曝光装置的光学系统可能具有像差，并且这个事实可能妨碍达到预期精度的尺寸和电路图案的位置，这是实现期望的装置性能所必需的。 此外，由于难以测量上述像差，因此不可能校正光学系统以实现基本上无像差的特性。投影透镜的像差可以通过以下步骤来准确地发现：测量 在投影图像中的n个不同点的掩模上的特定图案的投影图像的光强度; 并求解m个已知波前像差函数的m（m
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8.发明授权Photomask, manufacture of photomask, formation of pattern, manufacture of semiconductor device, and mask pattern design system 失效光掩模，光掩模的制造，图案的形成，半导体器件的制造和掩模图案设计系统
公开(公告)号：US5895741A
公开(公告)日：1999-04-20
申请号：US906162
申请日：1997-08-05
申请人： Norio Hasegawa , Tsuneo Terasawa , Hiroshi Fukuda , Katsuya Hayano , Akira Imai , Akemi Moniwa , Shinji Okazaki
发明人： Norio Hasegawa , Tsuneo Terasawa , Hiroshi Fukuda , Katsuya Hayano , Akira Imai , Akemi Moniwa , Shinji Okazaki
CPC分类号： G03F1/32 , G03F1/26 , G03F1/36 , G03F7/70283 , G03F7/70433
摘要： A photomask used for printing a mask pattern by projection optics, in which a main pattern formed of a transparent area is provided in a semitransparent area formed of a semitransparent film and a phase shifter, and the phase angles of light beams passing through respective areas are different from each other substantially by 180.degree.. The photomask is intended to prevent a reduction in a production yield due to a resolution failure of the photomask, and to prevent generation of an unnecessary projected image. In this photomask, a transparent auxiliary pattern having the same phase angle of light as that of the transparent area is disposed around a main pattern formed of the transparent area, and a distance D between the center or a desired center line of the main pattern and that of the auxiliary pattern satisfies the relationship of D=b.lambda./NAm , where NAm is a mask-side numerical aperture of a projection lens, .lambda. is a wavelength of exposure light, and is a coefficient in the range of 1.35
摘要翻译： 用于通过投影光学器件印制掩模图案的光掩模，其中由透明区域形成的半透明区域设置在由半透明膜和移相器形成的半透明区域中，并且通过各个区域的光束的相位角为 彼此相差180度。 光掩模旨在防止由于光掩模的分辨率故障导致的产量降低，并且防止产生不必要的投影图像。 在该光掩模中，具有与透明区域相同的相位相位角的透明辅助图案设置在由透明区域形成的主图案周围，并且主图案的中心或期望中心线之间的距离D和 辅助图案的图案满足D =bλ/ NAm的关系，其中NAm是投影透镜的掩模侧数值孔径，λ是曝光光的波长，并且b是1.35的范围内的系数
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公开(公告)号：US5885735A
公开(公告)日：1999-03-23
申请号：US834542
申请日：1997-03-31
申请人： Akira Imai , Norio Hasegawa , Hiroshi Fukuda , Toshihiko Tanaka
发明人： Akira Imai , Norio Hasegawa , Hiroshi Fukuda , Toshihiko Tanaka
摘要： There is disclosed a mask which includes a first phase shifter layer and a second phase shifter layer formed on the first phase shifter layer and has a structure capable of easily effecting highly precise control of the phase of exposure light and correction for a defect in the phase shifter layers. There are also disclosed a method of manufacturing the mask and a method of forming by use of the mask a pattern which has a smaller local error in pattern dimension and is free of a defect.
摘要翻译： 公开了一种掩模，其包括形成在第一移相器层上的第一移相器层和第二移相器层，并且具有能够容易地实现对曝光光的相位的高度精确控制和对相的缺陷进行校正的结构 移位层。 还公开了一种制造掩模的方法以及通过使用掩模形成图案的图案尺寸较小的局部误差并且没有缺陷的图案的方法。
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公开(公告)号：US5362591A
公开(公告)日：1994-11-08
申请号：US593808
申请日：1990-10-05
申请人： Akira Imai , Norio Hasegawa , Hiroshi Fukuda , Toshihiko Tanaka
发明人： Akira Imai , Norio Hasegawa , Hiroshi Fukuda , Toshihiko Tanaka
摘要： There is disclosed a mask which includes a first phase shifter layer and a second phase shifter layer formed on the first phase shifter layer and has a structure capable of easily effecting highly precise control of the phase of exposure light and correction for a defect in the phase shifter layers. There are also disclosed a method of manufacturing the mask and a method of forming by use of the mask a pattern which has a smaller local error in pattern dimension and is free of a defect.
摘要翻译： 公开了一种掩模，其包括形成在第一移相器层上的第一移相器层和第二移相器层，并且具有能够容易地实现对曝光光的相位的高度精确控制和对相的缺陷进行校正的结构 移位层。 还公开了一种制造掩模的方法以及通过使用掩模形成图案的图案尺寸较小的局部误差并且没有缺陷的图案的方法。
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