专利检索 ap:("Hiroyaki Ibe" OR "Seiichi Terashima" OR "Tsumoru Masui") AND inv:"Hiroyaki Ibe" 第 1 页

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发明授权
Method and apparatus for detecting a crystallographic axis of a single crystal ingot for "OF" determination 失效
标题翻译：用于检测单晶晶体的晶体轴的“测定”的方法和装置

公开(公告)号：US5187729A

公开(公告)日：1993-02-16

申请号：US838046

申请日：1992-02-19

申请人： Hiroyaki Ibe , Seiichi Terashima , Tsumoru Masui

发明人： Hiroyaki Ibe , Seiichi Terashima , Tsumoru Masui

IPC分类号： G01N23/20 , G01N23/207

CPC分类号： G01N23/20008 , G01N23/207 , G01N2223/056 , G01N2223/1016 , G01N2223/3306 , G01N2223/604

摘要： A method and an apparatus for detecting a crystallographic axis of a single crystal ingot based on the X-ray diffractometry, wherein and whereby a crystal habit line of the single crystal ingot is optically detected first, and thereafter making use of the geographical relation of the crystallographic axis to the crystal habit line, the crystallographic axis is detected with improved economy of time and labor and with improved precision, so that the orientation flat (OF) is made in the right place and direction.