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    CONTINUOUSLY VARIABLE TRANSMISSION AND SHIFT CONTROL METHOD
    1.
    发明申请
    CONTINUOUSLY VARIABLE TRANSMISSION AND SHIFT CONTROL METHOD 有权
    连续可变传输和移位控制方法

    公开(公告)号：US20120083977A1

    公开(公告)日：2012-04-05

    申请号：US13230026

    申请日：2011-09-12

    申请人： Hiroyasu TANAKA ,  Takuichiro Inoue ,  Ryousuke Nonomura ,  Takashi Eguchi ,  Mamiko Inoue ,  Seiichiro Takahashi

    发明人： Hiroyasu TANAKA ,  Takuichiro Inoue ,  Ryousuke Nonomura ,  Takashi Eguchi ,  Mamiko Inoue ,  Seiichiro Takahashi

    IPC分类号： F16H61/66

    CPC分类号： F16H61/66259 ,  F16H37/022 ,  F16H61/702 ,  F16H2037/023 ,  F16H2059/663 ,  F16H2061/163

    摘要： Continuously variable transmission includes: a variator; a stepwise auxiliary transmission mechanism; and a shift controller configured to set a desired through transmission ratio based on the calculated desired target rotational speed, the shift control section including; a slope road upshift prohibiting section configured to prohibit upshift of the auxiliary transmission mechanism when the vehicle runs on a slope road, and a slope road upshift section configured to upshift the auxiliary transmission mechanism when the vehicle runs in a predetermined running state when the slope road upshift prohibiting section prohibits upshift of the auxiliary transmission mechanism, and to perform the shift of the auxiliary transmission mechanism while the transmission ratio of the variator is varied in accordance with the variation of the transmission ratio of the auxiliary transmission mechanism to prevent varying the through transmission ratio even when the vehicle runs on the slope road.

    摘要翻译： 连续可变变速器包括：变速器; 逐步辅助传动机构; 以及变速控制器，其构造成基于所计算的期望目标转速来设定期望的通过传动比，所述变速控制部分包括： 斜坡加坡禁止部，被配置为当在所述车辆在斜坡道路上行驶时禁止所述辅助传动机构的升档;以及坡道道路换高档部，其构造成当所述车辆在所述斜坡道路处于预定的行驶状态时行驶时升档所述辅助传动机构 换档禁止部分禁止辅助传动机构的升挡，并且在变速器的传动比根据辅助传动机构的传动比的变化而变化的情况下执行辅助传动机构的换档，以防止改变传动装置 即使车辆在斜坡路上行驶也是如此。

    SHIFT CONTROL OF AUTOMATIC TRANSMISSION
    2.
    发明申请
    SHIFT CONTROL OF AUTOMATIC TRANSMISSION 有权
    自动变速箱换档控制

    公开(公告)号：US20110015840A1

    公开(公告)日：2011-01-20

    申请号：US12836172

    申请日：2010-07-14

    申请人： Seiichiro TAKAHASHI ,  Hiroyasu TANAKA ,  Ryousuke NONOMURA ,  Jouji SEKI ,  Takuichiro INOUE ,  Mamiko INOUE

    发明人： Seiichiro TAKAHASHI ,  Hiroyasu TANAKA ,  Ryousuke NONOMURA ,  Jouji SEKI ,  Takuichiro INOUE ,  Mamiko INOUE

    IPC分类号： F16H59/14

    CPC分类号： F16H61/061 ,  F16H3/663 ,  F16H37/022 ,  F16H61/66259 ,  F16H61/702 ,  F16H2037/023 ,  F16H2061/0087 ,  F16H2061/064 ,  F16H2342/04

    摘要： A subtransmission mechanism 30 comprises a Ravigneaux planetary gear mechanism 31, a Low brake 32 and a High clutch 33, shifts between a first speed gear position in which the Low brake 32 is engaged whereas the High clutch 33 is disengaged and a second speed gear position in which the Low brake 32 is disengaged and the High clutch 33 is engaged. A minute slip is caused at the Low brake 32 and then terminated by engaging the High clutch 33. A value representing the engaging state variation such as an engaging time period and/or an engaging speed of the High clutch 33 is learned and the pressure of oil supplied during the engaging operation of the High clutch 33 is corrected based upon the learned value, thereby assuring a smooth shift operation by compensating for any inconsistency in the torque transmission characteristics of the High clutch 33.

    摘要翻译： 副传动机构30包括：Ravigneaux行星齿轮机构31，低速制动器32和高速离合器33，在低速制动器32接合的第一速度档位和高速离合器33脱离的第一档位与第二档位 其中低速制动器32分离并且高速离合器33接合。 在低速制动器32处引起微小的滑动，然后通过接合高速离合器33而终止。表示接合状态变化的值，例如接合时间段和/或高速离合器33的接合速度，并且压力 基于该学习值来校正在高速离合器33的接合操作期间供应的油，从而通过补偿高速离合器33的转矩传递特性的任何不一致来确保平滑的换档操作。

    CONTINUOUSLY VARIABLE TRANSMISSION AND SHIFT CONTROL METHOD
    5.
    发明申请
    CONTINUOUSLY VARIABLE TRANSMISSION AND SHIFT CONTROL METHOD 有权
    连续可变传输和移位控制方法

    公开(公告)号：US20120059556A1

    公开(公告)日：2012-03-08

    申请号：US13216986

    申请日：2011-08-24

    申请人： Hiroyasu TANAKA ,  Masahide Ito ,  Masato Mori ,  Takashi Eguchi ,  Ryousuke Nonomura ,  Seiichiro Takahashi ,  Mamiko Inoue

    发明人： Hiroyasu TANAKA ,  Masahide Ito ,  Masato Mori ,  Takashi Eguchi ,  Ryousuke Nonomura ,  Seiichiro Takahashi ,  Mamiko Inoue

    IPC分类号： F16H61/66

    CPC分类号： F16H61/66259 ,  F16H37/022 ,  F16H61/702 ,  F16H2037/023 ,  F16H2061/6615 ,  F16H2061/6617

    摘要： The shift control unit shifts the sub-transmission mechanism while changing the speed ratio of the variator in response to a change in the speed ratio of the sub-transmission mechanism so that the through speed ratio does not change after the through speed ratio is caused to reach the final through speed ratio by changing only the speed ratio of the variator if the speed ratio corresponding to the shift instruction from the driver is between a first speed ratio at which the sub-transmission mechanism is in the second gear position at the high speed side and the speed ratio of the variator is lowest and a second speed ratio at which the sub-transmission mechanism is in the first gear position at the low speed side and the speed ratio of the variator is highest when the manual mode is selected.

    摘要翻译： 变速控制单元根据副变速机构的变速比的变化而改变变速器的变速比，使副变速机构移动，从而在通过变速比达到后，通过变速比不变化 如果与来自驾驶员的换档指令对应的速度比在副传动机构处于高速的第二档位的第一速比之间，则仅通过改变变速器的速比来达到最终的通过速比 并且当选择手动模式时，变速器的变速比最低，副变速机构处于低速侧的第一档位的第二速比和变速器的变速比最高。

    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
    10.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
    非易失性半导体存储器件

    公开(公告)号：US20110316069A1

    公开(公告)日：2011-12-29

    申请号：US12886010

    申请日：2010-09-20

    申请人： Hiroyasu TANAKA ,  Ryota KATSUMATA

    发明人： Hiroyasu TANAKA ,  Ryota KATSUMATA

    IPC分类号： H01L29/792

    CPC分类号： H01L27/11551 ,  H01L27/11526 ,  H01L27/11548 ,  H01L27/11556 ,  H01L29/66825 ,  H01L29/7889

    摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a memory unit and a non-memory unit. The memory unit includes a stacked structure including electrode films stacked in a first direction, and a interelectrode insulating film provided between the electrode films, a select gate electrode stacked with the stacked structure along the first direction, a semiconductor pillar piercing the stacked structure and the select gate electrode along the first direction and a pillar portion memory layer provided between the electrode films and the semiconductor pillar. The non-memory unit includes a dummy conductive film including a portion in a layer being identical to at least one of the electrode films, a dummy select gate electrode in a layer being identical to the select gate electrode, a first non-memory unit contact electrode electrically connected to the dummy conductive and a second non-memory unit contact electrode electrically connected to the dummy select gate.

    摘要翻译： 根据一个实施例，非易失性半导体存储器件包括存储器单元和非存储器单元。 存储单元包括堆叠结构，其包括在第一方向上堆叠的电极膜，以及设置在电极膜之间的电极间绝缘膜，沿着第一方向堆叠层叠结构的选择栅电极，穿过层叠结构的半导体柱和 沿着第一方向选择栅电极和设置在电极膜和半导体柱之间的柱部存储层。 非存储单元包括虚拟导电膜，其包括与至少一个电极膜相同的层中的部分，与选择栅电极相同的层中的虚拟选择栅电极，第一非存储单元触点 电连接到虚拟导电体的电极和与虚拟选择栅极电连接的第二非存储单元接触电极。