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公开(公告)号：US6135854A
公开(公告)日：2000-10-24
申请号：US233852
申请日：1999-01-19
CPC分类号： B24B49/12 , B24B37/08 , B24B37/345
摘要： An automatic workpiece transport apparatus for a double-side polishing machine is disclosed. A carrier is positioned at a predetermined position by a positioning unit, and an image of the top surface of the carrier is captured by use of a visual sensor. A computer performs image processing to obtain the center coordinates of the wafers or the workpiece holders while reference marks or the like provided on the carrier are used as references. The transport robot is moved and controlled based on the thus-detected coordinate data in order to load the wafers into the workpiece holders or to unload the wafers from the workpiece holders. Further, two visual sensors are provided at the tip end of the arm of the transport robot. These visual sensors send to the computer an image of the peripheral portion of the held wafer. Thus, the computer performs fine adjustment in positioning the wafer and the workpiece. The automatic workpiece transport apparatus can reliably load and unload semiconductor wafers to and from the carrier that holds semiconductor substrates.
摘要翻译： 公开了一种用于双面抛光机的自动工件输送装置。 载体通过定位单元定位在预定位置，并且通过使用视觉传感器捕获载体的顶表面的图像。 计算机执行图像处理以获得晶片或工件保持器的中心坐标，而使用设置在载体上的参考标记等作为参考。 基于由此检测的坐标数据来移动和控制传送机器人，以便将晶片加载到工件保持器中或者从工件保持器卸载晶片。 此外，在运输机器人的臂的末端设置有两个视觉传感器。 这些视觉传感器向计算机发送保持的晶片的周边部分的图像。 因此，计算机在定位晶片和工件时进行微调。 自动工件传送装置可以可靠地将半导体晶片装载到保持半导体衬底的载体上和从载体卸载半导体晶片。
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公开(公告)号：US20090032188A1
公开(公告)日：2009-02-05
申请号：US11718484
申请日：2004-11-10
IPC分类号： H01L21/306
CPC分类号： H01L21/67051 , H01L21/67028 , H01L21/6875
摘要： The present invention provides a single wafer processor structured such that similar immersion treatment to the conventional immersion treatment can be performed in the spin treatment, that a consumption of the chemical solutions can be reduced in the chemical solution treatment per wafer, that energy saving can be realized by using reaction heat of the chemical solutions to eliminate a necessity of a heating heater, that a problem of deterioration of the chemical solutions can be eliminated since the blending of the chemical solutions is implemented on the rotary disk part and the chemical solutions are used immediately thereafter, and that the maximum effective point of the chemical solutions can be utilized. The processor of the present invention includes: a rotary disk (12) having medium flow passages on an upper surface thereof; a plurality of wafer receiving parts (18) provided on the upper surface of the rotary disk; an annular dam member (48) located outward of an outer circumferential edge of a wafer (w) mounted on the wafer receiving parts and provided so that an upper edge of the annular dam member can be located at an upper level than an upper surface of the wafer thus mounted; and nozzle means (60a-d), provided above the wafer mounted on the wafer receiving parts, for supplying a chemical solution and rinse water.
摘要翻译： 本发明提供了一种单晶片处理器，其结构使得可以在旋转处理中进行与常规浸渍处理相似的浸渍处理，可以在每个晶片的化学溶液处理中消除化学溶液的消耗，节能可以 通过使用化学溶液的反应热消除加热加热器的需要，可以消除化学溶液劣化的问题，因为化学溶液的混合在旋转盘部分上进行并且使用化学溶液 之后，可以利用化学溶液的最大有效点。 本发明的处理器包括：在其上表面上具有中流动通道的旋转盘（12）; 设置在旋转盘的上表面上的多个晶片接收部件（18） 位于安装在晶片接收部分上的晶片（w）的外周边缘的外侧的环形阻挡构件（48），并且设置成使得环形阻挡构件的上边缘可以位于比上表面 如此安装的晶片; 以及设置在安装在晶片接收部件上的晶片上方的用于提供化学溶液和冲洗水的喷嘴装置（60a-d）。
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公开(公告)号：US07659212B2
公开(公告)日：2010-02-09
申请号：US10586873
申请日：2004-03-22
IPC分类号： H01L21/306
CPC分类号： H01L22/20 , H01L21/30604
摘要： The present invention provides a process control method in spin etching capable of realizing uniformity in etching amount in etching treatment for even wafers each having various conditions, and achieving uniformity of thickness values among etched wafers. In the present invention, weight of a wafer before etching is measured in units of 1/1000 g, followed by predetermined etching treatment in a spin etching section. Thereafter, weight of the wafer is again measured in units of 1/1000 g after rinsing and drying treatment of the wafer, and then an actual etching amount is calculated from a difference between weight before and after etching of the wafer, confirming an etching rate each time etching to thereby control an etching time.
摘要翻译： 本发明提供了一种旋转蚀刻中的工艺控制方法，其能够实现在具有各种条件的均匀晶片的蚀刻处理中的蚀刻量的均匀性，并且实现了蚀刻晶片之间的厚度值的均匀性。 在本发明中，蚀刻前的晶片的重量以1/1000g为单位进行测定，接着在旋转刻蚀部中进行规定的蚀刻处理。 此后，晶片的漂洗和干燥处理之后再次以1/1000g为单位测量晶片的重量，然后根据晶片蚀刻之前和之后的重量差来计算实际蚀刻量，确认蚀刻速率 每次蚀刻从而控制蚀刻时间。
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公开(公告)号：US20090032498A1
公开(公告)日：2009-02-05
申请号：US11908275
申请日：2005-03-30
CPC分类号： H01L21/6708
摘要： There are provided a spin processing method and a spin processing apparatus with which the improvement of a processing speed in spin processing can be compatible with the saving of a processing solution. The spin processing method comprises holding and fixing the wafer on the upper surface of the spin table, and supplying the processing solution to the surface of the wafer by the predetermined amount while rotating the spin table, to process the surface of the wafer, wherein the processing solution is supplied while the wafer is heated and maintained at the predetermined temperature, to process the wafer. The predetermined temperature for heating the wafer is equal to or higher than 25° C.
摘要翻译： 提供了旋转处理方法和旋转处理装置，其中旋转处理中的处理速度的提高可以与处理解决方案的保存兼容。 旋转处理方法包括将晶片保持并固定在旋转台的上表面上，并且在旋转旋转台的同时将处理溶液提供给晶片的表面预定量，以处理晶片的表面，其中 在将晶片加热并保持在预定温度的同时提供处理溶液以处理晶片。 用于加热晶片的预定温度等于或高于25℃
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公开(公告)号：US20100101726A1
公开(公告)日：2010-04-29
申请号：US12628603
申请日：2009-12-01
IPC分类号： C23F1/02
CPC分类号： H01L22/20 , H01L21/30604
摘要： The present invention provides a process control method in spin etching capable of realizing uniformity in etching amount in etching treatment for even wafers each having various conditions, and achieving uniformity of thickness values among etched wafers. In the present invention, weight of a wafer before etching is measured in units of 1/1000 g, followed by predetermined etching treatment in a spin etching section. Thereafter, weight of the wafer is again measured in units of 1/1000 g after rinsing and drying treatment of the wafer, and then an actual etching amount is calculated from a difference between weight before and after etching of the wafer, confirming an etching rate each time etching to thereby control an etching time.
摘要翻译： 本发明提供了一种旋转蚀刻中的工艺控制方法，其能够实现在具有各种条件的均匀晶片的蚀刻处理中的蚀刻量的均匀性，并且实现了蚀刻晶片之间的厚度值的均匀性。 在本发明中，蚀刻前的晶片的重量以1/1000g为单位进行测定，接着在旋转刻蚀部中进行规定的蚀刻处理。 此后，晶片的漂洗和干燥处理之后再次以1/1000g为单位测量晶片的重量，然后根据晶片蚀刻之前和之后的重量差来计算实际蚀刻量，确认蚀刻速率 每次蚀刻从而控制蚀刻时间。
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公开(公告)号：US20080242101A1
公开(公告)日：2008-10-02
申请号：US10586873
申请日：2004-03-22
IPC分类号： H01L21/306
CPC分类号： H01L22/20 , H01L21/30604
摘要： The present invention provides a process control method in spin etching capable of realizing uniformity in etching amount in etching treatment for even wafers each having various conditions, and achieving uniformity of thickness values among etched wafers. In the present invention, weight of a wafer before etching is measured in units of 1/1000 g, followed by predetermined etching treatment in a spin etching section. Thereafter, weight of the wafer is again measured in units of 1/1000 g after rinsing and drying treatment of the wafer, and then an actual etching amount is calculated from a difference between weight before and after etching of the wafer, confirming an etching rate each time etching to thereby control an etching time.
摘要翻译： 本发明提供了一种旋转蚀刻中的工艺控制方法，其能够实现在具有各种条件的均匀晶片的蚀刻处理中的蚀刻量的均匀性，并且实现了蚀刻晶片之间的厚度值的均匀性。 在本发明中，蚀刻前的晶片的重量以1/1000g为单位进行测定，接着在旋转刻蚀部中进行规定的蚀刻处理。 此后，晶片的漂洗和干燥处理之后再次以1/1000g为单位测量晶片的重量，然后根据晶片蚀刻之前和之后的重量差来计算实际蚀刻量，确认蚀刻速率 每次蚀刻从而控制蚀刻时间。
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公开(公告)号：US20080128085A1
公开(公告)日：2008-06-05
申请号：US11719985
申请日：2004-12-01
CPC分类号： H01L21/6708 , B08B3/02 , B08B11/02 , H01L21/6715
摘要： According to the present invention, when performing spin treatment on a square wafer for a solar battery, it is possible to prevent the treatment medium, which is caused to flow down onto the surface of the wafer and scattered to the outside of the wafer from the four sides thereof in droplets, from reaching the back surface of the wafer. A surface treating apparatus for a square wafer for a solar battery according to the present invention includes: a rotating disc capable of rotating at a predetermined speed; a wafer holding part protruding from the central portion of the upper surface of the rotating disc and adapted to hold a square wafer; a flow-down nozzle for supplying the treatment medium onto a surface of the square wafer from above the wafer holding part in a downflow; and four correction plates provided upright on the rotating disc so as to be situated outward respectively in correspondence with the four sides of the square wafer when the square wafer is held by the wafer holding part; when, with the square wafer being held by the wafer holding part, the rotating disc is rotated and the treatment medium is caused to flow down onto the surface of the square wafer, it is possible to prevent the treatment medium from reaching the back surface of the square wafer.
摘要翻译： 根据本发明，当在太阳能电池的正方形晶片上进行旋转处理时，可以防止从晶片的表面向下流动的处理介质从晶片的外部向 其四面是液滴，到达晶片的后表面。 根据本发明的用于太阳能电池的正方形晶片的表面处理装置包括：能够以预定速度旋转的旋转盘; 晶片保持部分，其从旋转盘的上表面的中心部分突出并适于保持正方形的晶片; 用于以下降流从所述晶片保持部件的上方将所述处理介质供给到所述正方晶片的表面的流下喷嘴; 以及当所述正方形晶片被所述晶片保持部保持时，四个校正板直立设置在所述旋转盘上，以便分别对准所述正方晶片的四个侧面; 当正方形晶片被晶片保持部保持时，旋转盘旋转并使处理介质向下流到正方晶片的表面上，可以防止处理介质到达 正方形晶圆。
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