公开(公告)号：US20180025888A1

公开(公告)日：2018-01-25

申请号：US15548531

申请日：2015-02-09

Applicant: Hitachi, Ltd.

Inventor： Hiroyasu SHICHI ,  Masaki HASEGAWA ,  Teruo KOHASHI ,  Shinichi MATSUBARA

IPC: H01J37/29 ,  H01J37/22 ,  H01J37/08 ,  H01J37/26

CPC classification number: H01J37/29 ,  H01J37/08 ,  H01J37/22 ,  H01J37/265 ,  H01J37/28 ,  H01J37/317

Abstract: To provide a device particularly including an imaging-type or a projection-type ion detection system, not a scanning type such as in a scanning ion microscope, and capable of performing observation or inspection at high speed with an ultrahigh resolution in a sample observation device using an ion beam. To further provide a device capable of performing observation after surface cleaning, which has been difficult in an electron beam device, or a device capable of observing structures and defects in a depth direction. The device includes a gas field ion source that generates an ion beam, an irradiation optical system that irradiates a sample with the generated ion beam, a potential controller that controls an accelerating voltage of the ion beam and a positive potential to be applied to the sample and an ion detection unit that images or projects ions reflected from the sample as a microscope image, in which the potential controller includes a storage unit storing a first positive potential allowing the ion beam to collide with the sample and a second positive potential for reflecting the ion beam before allowing the ion beam to collide with the sample. Then, the potential controller includes a sputter controller for removing part of a sample surface by setting the first positive potential and an image acquisition controller for obtaining a microscope image by setting the second positive potential.