Abstract:
A magnetic measurement device has a magnetic sensor including a glass cell having alkali metal gas encapsulated therein that is configured to detect a magnetic field using a magneto-optical characteristic of spin-polarized alkali metal. A laser light source is configured to generate pump light introduced into the magnetic sensor and a coil provided in the same magnetically shielded space as the magnetic sensor is configured to apply a static magnetic field and a RF magnetic field to the magnetic sensor. A signal processor is configured to perform lock-in detection of a light detection signal transmitted through the glass cell of the magnetic sensor, control an intensity of the static magnetic field and a frequency of the RF magnetic field generated by the coil according to a lock-in detection output, and obtain a measurement signal reflecting a magnetic field intensity of an object to be measured in the magnetically shielded space.
Abstract:
Stable magnetic field measurement is enabled without collapse of polarization or fluctuation of intensity of a laser beam incident on a glass cell of an optical pumping magnetic sensor. Excitation light generated with a light source, having optimized light intensity and polarized wave, through frequency stabilization, intensity control and polarized-wave control, is introduced via a polarized wave holding optical fiber to a magnetic sensor provided in a magnetic shield, and magnetic field measurement is performed by optical pumping using magneto-optical properties of spin-polarized alkali metal. The magnetic sensor has a structure where a lens, a polarization optical device, the glass cell and a photodetector, are integrally accommodated in a non-magnetic case.
Abstract:
Detection accuracy of a semiconductor device for detecting various kinds of substances including biological matter such as DNA is to be increased. This semiconductor device includes: a channel region CH placed on a first surface of a silicon oxide film 110; source/drain regions placed on both sides of the channel region CH; a gate electrode G placed on the first surface at a distance from the channel region CH, the gate electrode G being located to face a side surface xz1 of the channel region CH; an insulating film Z located between the channel region CH and the gate electrode G; and a pore P extending parallel to the side surface xz1 of the channel region CH, the pore P being perpendicular to the first surface. A test object such as DNA 200 is introduced into the pore P, and field changes caused by the test object in an inversion layer 10 formed in the side surface xz1 of the channel region CH is detected as changes in the current flowing between the source/drain regions.