公开(公告)号：US10030266B2

公开(公告)日：2018-07-24

申请号：US14895923

申请日：2013-06-27

Applicant: HITACHI, LTD.

Inventor： Itaru Yanagi ,  Riichiro Takemura ,  Yoshimitsu Yanagawa ,  Takahide Yokoi ,  Takashi Anazawa

IPC: C12Q1/6874 ,  H01L29/49 ,  H01L29/66 ,  G01N27/414 ,  H01L21/02 ,  H01L21/283 ,  H01L21/306 ,  H01L21/8234

Abstract: In the field of the next generation DNA sequencer, a method for integrating very high sensitive FET sensors having side gates and nanopores as devices used for identifying four kinds of base and for mapping the base sequence of DNA without using reagents, and a semiconductor device having selection transistors and amplifier transistors respectively corresponding to the FET sensors having side gates and nanopores respectively so as to be able to read the variation of a detection current based on the differences among the charges of the four kinds of base without deteriorating the detection sensitivity of the FET sensor, are presented.

公开(公告)号：US10908121B2

公开(公告)日：2021-02-02

申请号：US16082431

申请日：2016-04-28

Applicant: Hitachi, Ltd.

Inventor： Itaru Yanagi

IPC: G01N27/447 ,  G01N21/64 ,  G01N33/487 ,  H01L21/02

Abstract: The present invention provides a membrane device having a configuration capable of reducing the frequency of clogging of a sample in a nanopore when the sample passes through the nanopore. In the membrane device according to the present invention, a membrane and a semiconductor layer are stacked on a Si substrate, and an insulating film is formed on a side wall of a through hole included in the semiconductor layer.

公开(公告)号：US10761057B2

公开(公告)日：2020-09-01

申请号：US15545431

申请日：2015-02-13

Applicant: Hitachi, Ltd.

Inventor： Itaru Yanagi ,  Kenichi Takeda

IPC: G01N27/447 ,  C23C16/34 ,  G01N33/487 ,  C23C16/24

Abstract: A method for producing a membrane device includes: forming an insulating film as a first film on a Si substrate; forming a Si film as a second film on the entire surface or a part of the first film; forming an insulating film as a third film on the second film; forming an aperture so as to pass through a part of the third film positioned on the second film and not to pass through the second film; etching a part of the substrate on one side of the first film with a solution that does not etch the first film; and etching a part or all of the second film on the other side of the first film with a gas or a solution that does not etch the first film and has an etching rate for the third film lower than an etching rate for the second film.

公开(公告)号：US10338057B2

公开(公告)日：2019-07-02

申请号：US15508072

申请日：2014-09-11

Applicant: Hitachi, Ltd.

Inventor： Itaru Yanagi ,  Kenichi Takeda

IPC: G01N27/447 ,  G01N33/487 ,  G01N27/327 ,  B82B1/00 ,  B82B3/00 ,  C12Q1/6869 ,  B81C1/00 ,  B82Y5/00 ,  B82Y40/00

Abstract: The membrane of a conventional solid-state nanopore device, which is believed to be promising for understanding the structural characteristics of DNA and determining a nucleotide sequence, has been thick, and the accuracy in determining a nucleotide sequence in the DNA chain has been insufficient. A method characterized by forming a membrane by forming a first film on a first substrate having a surface of Si, then forming a hole in the first film in such a manner that the surface of the first substrate is exposed, then forming a second film on the first film and on the surface of the first substrate and then etching the first substrate with a solution which does not remove the second film.

公开(公告)号：US20140243214A1

公开(公告)日：2014-08-28

申请号：US14241041

申请日：2013-02-26

Applicant: Hitachi, Ltd.

Inventor： Takanobu Haga ,  Itaru Yanagi ,  Naoshi Itabashi ,  Yoshimitsu Yanagawa ,  Takeshi Ohura ,  Takashi Anazawa

IPC: G01N33/487 ,  G01N27/414

CPC classification number: G01N33/48721 ,  G01N27/4145 ,  Y10T436/143333

Abstract: In an FET configuration having a channel with a small thickness, transistor characteristics vary for different FETs in the same array, and therefore when the same gate voltage is applied, the sensitivities of DNA detection may be insufficient. To this end, the change in the channel current when DNA passes through the nanopore is detected while applying an optimum gate voltage for each nanopore FET to attain a predetermined channel current value to a plurality of nanopore FETs disposed on the same substrate, and four types of bases constituting DNA are distinguished.

Abstract translation: 在具有小厚度的沟道的FET配置中，晶体管特性对于同一阵列中的不同FET而变化，因此当施加相同的栅极电压时，DNA检测的灵敏度可能不足。 为此，检测DNA通过纳米孔时的通道电流的变化，同时对每个纳米孔FET施加最佳的栅极电压，以对设置在同一基板上的多个纳米孔FET获得预定的通道电流值， 区分构成DNA的碱基。

公开(公告)号：US11656218B2

公开(公告)日：2023-05-23

申请号：US16464835

申请日：2017-10-12

Applicant: HITACHI, LTD.

Inventor： Mayu Aoki ,  Itaru Yanagi ,  Kunio Harada ,  Kenichi Takeda

IPC: G01N33/487 ,  G01N27/447 ,  G01N27/04 ,  G01N27/00

CPC classification number: G01N33/48721 ,  G01N27/00 ,  G01N27/04 ,  G01N27/44791

Abstract: A method includes a step of introducing a solution between a substrate with a membrane in which the membrane is provided so as to close an opening and a substrate provided with an independent electrode in which the independent electrode is provided, a step of pressure bonding the substrate with the membrane and the substrate with the independent electrode through a partition wall, and a step of forming a sealed liquid tank surrounded by at least the membrane and the partition wall by the pressure bonding, and arraying of a solid-state type nanopore sequencer is simply performed.

公开(公告)号：US11255022B2

公开(公告)日：2022-02-22

申请号：US16905035

申请日：2020-06-18

Applicant: HITACHI, LTD.

Inventor： Itaru Yanagi ,  Rena Akahori ,  Kenichi Takeda

IPC: C25F3/14 ,  G01N33/487 ,  C12Q1/6869 ,  G01N27/447

Abstract: A pore forming method in which a pore is formed in such a way that a first voltage is applied between electrodes that are disposed with a film in an electrolytic solution therebetween; a second voltage, which is lower than the first voltage, is applied between the electrodes; a current that flows between the electrodes owing to the application of the second voltage is measured; it is judged whether a value of a current is equal to or larger than a predefined threshold; and if the value of the current is smaller than the threshold, the above sequence is repeated until a pore is formed. In this case, the second voltage is a voltage that makes the value (IPF) of the current flowing through the film practically 0. With the use of the above method, a nanopore is formed in the film simply, easily, and accurately.

公开(公告)号：US10969377B2

公开(公告)日：2021-04-06

申请号：US15513133

申请日：2014-11-12

Applicant: HITACHI, LTD.

Inventor： Kazuma Matsui ,  Itaru Yanagi ,  Kenichi Takeda

IPC: G01N33/487 ,  G01N27/447 ,  C12Q1/6869

Abstract: An apparatus for a thin film device is used for analyzing a biopolymer. The apparatus has a thin film, a first solution in contact with a first surface of the thin film, a second solution in contact with a second surface of the thin film, a flow path or a conductive wire for adjusting the potential difference between the first solution and the second solution to a small value, a control unit for controlling the flow path or the conductive wire, an inlet from which a biopolymer is introduced to at least one of the first and second solution, a first electrode provided in the first solution, a second electrode provided in the second solution and an ammeter for measuring the current which flows between the first and second electrode when the biopolymer passes through a hole in the thin film between the first and second solution.

公开(公告)号：US10724147B2

公开(公告)日：2020-07-28

申请号：US15104325

申请日：2013-12-25

Applicant: HITACHI, LTD.

Inventor： Itaru Yanagi ,  Rena Akahori ,  Kenichi Takeda

IPC: C25F3/14 ,  G01N33/487 ,  C12Q1/6869 ,  G01N27/447

Abstract: A pore forming method in which a pore is formed in such a way that a first voltage is applied between electrodes that are disposed with a film in an electrolytic solution therebetween; a second voltage, which is lower than the first voltage, is applied between the electrodes; a current that flows between the electrodes owing to the application of the second voltage is measured; it is judged whether a value of a current is equal to or larger than a predefined threshold; and if the value of the current is smaller than the threshold, the above sequence is repeated until a pore is formed. In this case, the second voltage is a voltage that makes the value (IPF) of the current flowing through the film practically 0. With the use of the above method, a nanopore is formed in the film simply, easily, and accurately.

公开(公告)号：US20240052507A1

公开(公告)日：2024-02-15

申请号：US18260879

申请日：2021-11-30

Applicant: HITACHI, LTD.

Inventor： Itaru Yanagi ,  Yoshimitsu Yanagawa

IPC: C25B13/02

CPC classification number: C25B13/02

Abstract: Realized is a formation of a nanopore having a desired size with high yields using the dielectric breakdown phenomenon. The present disclosure proposes, as an aspect, a pore forming method including disposing a membrane between a first electrolyte solution and a second electrolyte solution held in a chamber configuration, bringing a first electrode into contact with the first electrolyte solution and a second electrode into contact with the second electrolyte solution, outputting a first voltage from a voltage source to a circuit configured by disposing the voltage source and a resistor in a wiring connecting the first electrode and the second electrode, measuring a second voltage between the first electrode and the second electrode, detecting a significant change in the second voltage, and stopping output of the first voltage in response to detecting the significant change in the second voltage.