公开(公告)号：US20230023345A1

公开(公告)日：2023-01-26

申请号：US17785297

申请日：2020-11-27

Applicant: HITACHI ASTEMO, LTD.

Inventor： Nobutake TSUYUNO ,  Akira MATSUSHITA ,  Toru KATO

IPC: H05K7/20 ,  H05K5/03 ,  H02M7/00

Abstract: The resin material 336 is arranged in a first region 421 surrounded by the fin base 440, the inclined portion 343 of the cover member 340, and the outermost peripheral heat dissipation fins 334 arranged on the outermost peripheral side. Then, the resin material 336 is caused to protrude to the first region 421. That is, the resin material 336 is arranged in the first region 421. In a cross section perpendicular to the refrigerant flow direction (Y direction), a cross-sectional area of the first region 421 is larger than an average cross-sectional area 423 of the adjacent heat dissipation fins 331. Then, a cross-sectional area of a second region 422 formed between the resin material 336 arranged in the first region 421 and the outermost peripheral heat dissipation fin 334 arranged on the outermost peripheral side is smaller than the average cross-sectional area 423 of the heat dissipation fins.

公开(公告)号：US20220338370A1

公开(公告)日：2022-10-20

申请号：US17760729

申请日：2020-07-31

Applicant: HITACHI ASTEMO, LTD.

Inventor： Takashi HIRAO ,  Takeshi TOKUYAMA ,  Noriyuki MAEKAWA ,  Akira MATSUSHITA ,  Toshiya SATOH

IPC: H05K7/20 ,  H02M7/00 ,  H02K9/00

Abstract: No consideration is given to heat transferred from a semiconductor module to a capacitor via a bus bar module. The heat generated by a semiconductor module (1) is transferred to a bus bar module (3) via a DC terminal (1A) of the semiconductor module (1). As illustrated in FIG. 4(B), the heat transferred to the bus bar module 3 is then transferred to the pressing member 5 via the annular conductor 8 and the bolt 5A. Since the pressing member 5 is in close contact with the second cooler 2B, the heat transferred to the pressing member 5 is cooled by the second cooler 2B. On the other hand, the heat transferred to the convex portion 6A of the housing 6 is transferred to the first cooler 2A via the housing 6 and cooled. As a result, in the configuration in which a capacitor (4) is connected to the semiconductor module (1) via the bus bar module (3), the heat transferred from the semiconductor module (1) to the capacitor (4) can be suppressed.

公开(公告)号：US20220336324A1

公开(公告)日：2022-10-20

申请号：US17760722

申请日：2020-08-14

Applicant: HITACHI ASTEMO, LTD.

Inventor： Nobutake TSUYUNO ,  Yujiro KANEKO ,  Akira MATSUSHITA ,  Masahito MOCHIZUKI ,  Eiichi IDE ,  Junpei KUSUKAWA

IPC: H01L23/473 ,  H02M7/00 ,  H02M7/5387 ,  H05K7/20 ,  H01L25/07 ,  H01L21/48

Abstract: A sheet-shaped member 440 including a resin insulating layer 441 and a metal foil 442 is used. The sheet-shaped member 440 is deformed following warpage or step difference in a second conductor plate 431 and a fourth conductor plate 433, and therefore, the thickness of the resin insulating layer 441 can be set to a constant thickness of, for example, 120 μm capable of securing insulation properties. By plastically deforming a metal-based heat conduction member 450 having a thickness of, for example, 120 μm interposed between the sheet-shaped member 440 and a cooling member 340, the thickness of the metal-based heat conduction member 450 is changed to absorb the warpage or step difference generated in the second conductor plate 431 and the fourth conductor plate 433. This results in remarkable improvement in heat dissipation as compared with a case where the conductor plates are brought into contact with the cooling member 340 via an insulating layer alone.

公开(公告)号：US20220013432A1

公开(公告)日：2022-01-13

申请号：US17293168

申请日：2019-11-05

Applicant: Hitachi Astemo, Ltd.

Inventor： Hiromi SHIMAZU ,  Yujiro KANEKO ,  Toru KATO ,  Akira MATSUSHITA ,  Eiichi IDE

IPC: H01L23/373 ,  H01L25/07 ,  H01L23/367 ,  H01L21/48 ,  H01L25/00

Abstract: A power semiconductor device includes an insulating substrate on which a first conductor layer is arranged on one surface, a first conductor that is connected to the first conductor layer via a first connecting material, and a semiconductor element that is connected to the first conductor via a first connecting material. When viewed from a direction perpendicular to an electrode surface of the semiconductor element, the first conductor includes a peripheral portion formed larger than the semiconductor element. A first recess is formed in the peripheral portion so that a thickness of the first connecting material becomes thicker than other portions.

公开(公告)号：US20210391236A1

公开(公告)日：2021-12-16

申请号：US17295713

申请日：2019-11-08

Applicant: HITACHI ASTEMO, LTD.

Inventor： Nobutake TSUYUNO ,  Akira MATSUSHITA ,  Yujiro KANEKO

IPC: H01L23/367 ,  H01L23/373 ,  H01L21/48 ,  H05K7/20

Abstract: A semiconductor module 900 includes a semiconductor device 300 that includes first and second fin bases 800 having first and second connecting portions 810 and a resin 850 for sealing the outer peripheral side surfaces of first to fourth conductors 410 to 413, and a flow path forming body 600 connected to the first and second connecting portions 810 of the first and second fin bases 800. A first elastically deformed portion 801, which is elastically deformed, is provided such that a distance in a thickness direction between the outer peripheral ends 810a of the first and second connecting portions 810 becomes smaller than a distance in a thickness direction between intermediate portions 804 of the first and second connecting portions 810. The resin 850 is filled between the first and second connecting portions 810 of the first and second fin bases 800 are filled with the resin 850 therebetween.

公开(公告)号：US20220263425A1

公开(公告)日：2022-08-18

申请号：US17628997

申请日：2020-07-14

Applicant: HITACHI ASTEMO, LTD.

Inventor： Takuma HAKUTO ,  Takayuki OSHIMA ,  Akira MATSUSHITA

IPC: H02M7/00 ,  H02M1/34 ,  H01L23/367

Abstract: An inductance reduction effect is improved by reducing the distortion of an inductance loop generated when a switching element is turned on and off. An upper arm circuit portion (201U) and a lower arm circuit portion (201L) are provided so as to be shifted in the second direction orthogonal to the first direction in which the upper arm circuit portion (201U) and the lower arm circuit portion (201L) are separated from each other, and at least a part of a snubber circuit connection portion region (202) constituted by a positive electrode terminal portion (181), a negative electrode terminal portion (155), and a snubber element (30) is provided in the first region generated by shifting the upper arm circuit portion (201U) from the lower arm circuit portion (201L) in the second direction.