公开(公告)号：US20240282665A1

公开(公告)日：2024-08-22

申请号：US18570145

申请日：2022-03-02

Applicant: Hitachi Astemo, Ltd.

Inventor： Junpei KUSUKAWA ,  Eiichi IDE ,  Takashi HIRAO ,  Yujiro KANEKO

IPC: H01L23/42 ,  H01L23/14 ,  H01L23/31

CPC classification number: H01L23/42 ,  H01L23/142 ,  H01L23/3107

Abstract: Provided is a power semiconductor device including: a circuit body in which a conductor plate and a semiconductor element mounted on the conductor plate are sealed with a sealing resin; a cooler disposed opposite to at least one surface of the circuit body; and an insulating member disposed between the circuit body and the cooler, the insulating member including: an insulating sheet bonded to the cooler; a conductor layer bonded to a surface of the insulating sheet, the surface facing the circuit body; and electrically insulating heat dissipation grease filled between the circuit body and the cooler, and formed covering the insulating sheet and the conductor layer.

公开(公告)号：US20220375820A1

公开(公告)日：2022-11-24

申请号：US17772943

申请日：2020-09-29

Applicant: HITACHI ASTEMO, LTD.

Inventor： Hiromi SHIMAZU ,  Yujiro KANEKO ,  Eiichi IDE ,  Yusuke TAKAGI ,  Hisashi TANIE

IPC: H01L23/40 ,  H01L25/07 ,  H01L25/18 ,  H05K7/20

Abstract: A problem is that close contact with a heat dissipation surface of a power semiconductor device is not sufficient, and thus heat dissipation performance is low. A thermally conductive layer 5 abuts on a heat dissipation surface 4a of a circuit body 100, and a heat dissipation member 7 abuts on the outside of the thermally conductive layer 5, which is a side of the heat dissipation surface 4a of the circuit body 100. A fixing member 8 abuts on a side of the circuit body 100 opposite to the heat dissipation surface 4a. A connection member 9 is penetrated at the respective end portions of the heat dissipation member 7 and the fixing member 8. FIG. 3 illustrates a state before a bolt and a nut of the connection member 9 are tightened. The heat dissipation member 7 holds a curved shape such that the central portion of the heat dissipation member 7 protrudes toward the circuit body 100. The bolt and the nut of the connection member 9 are fastened and fixed at both ends of the heat dissipation member 7 and the fixing member 8 so as to sandwich the circuit body 100. The heat dissipation member 7 is elastically deformed to bring the heat dissipation member 7 into close contact with the heat dissipation surface 4a of the circuit body 100 via the thermally conductive layer 5, and surface pressure is applied from the heat dissipation member 7 to the heat dissipation surface 4a.

公开(公告)号：US20220013432A1

公开(公告)日：2022-01-13

申请号：US17293168

申请日：2019-11-05

Applicant: Hitachi Astemo, Ltd.

Inventor： Hiromi SHIMAZU ,  Yujiro KANEKO ,  Toru KATO ,  Akira MATSUSHITA ,  Eiichi IDE

IPC: H01L23/373 ,  H01L25/07 ,  H01L23/367 ,  H01L21/48 ,  H01L25/00

Abstract: A power semiconductor device includes an insulating substrate on which a first conductor layer is arranged on one surface, a first conductor that is connected to the first conductor layer via a first connecting material, and a semiconductor element that is connected to the first conductor via a first connecting material. When viewed from a direction perpendicular to an electrode surface of the semiconductor element, the first conductor includes a peripheral portion formed larger than the semiconductor element. A first recess is formed in the peripheral portion so that a thickness of the first connecting material becomes thicker than other portions.

公开(公告)号：US20240038611A1

公开(公告)日：2024-02-01

申请号：US18039896

申请日：2021-09-29

Applicant: Hitachi Astemo, Ltd.

Inventor： Ning TANG ,  Nobutake TSUYUNO ,  Yujiro KANEKO ,  Eiichi IDE

IPC: H01L23/31 ,  H01L23/473 ,  H01L25/18 ,  H01L23/00 ,  H01L21/56 ,  H01L25/00

CPC classification number: H01L23/3121 ,  H01L23/473 ,  H01L25/18 ,  H01L24/40 ,  H01L24/37 ,  H01L21/566 ,  H01L25/50 ,  H01L2224/40137 ,  H01L2224/40101 ,  H01L2224/37147 ,  H01L2224/37124 ,  H01L2224/37639 ,  H01L2224/37655 ,  H01L23/49575

Abstract: An electrical circuit body includes a power semiconductor element joined to one face of a conductor plate, a sheet member including an insulating layer joined to the other face of the conductor plate, a sealing member integrally sealing the sheet member, the conductor plate, and the power semiconductor element in a state where a face, of the sheet member, opposite to a face joined to the conductor plate is exposed, and a cooling member bonded to the opposite face of the sheet member via a heat conduction member, wherein the sealing member has a recess along an outer edge of the sheet member on a surface where the sheet member is exposed, the recess being located outside the sheet member.

公开(公告)号：US20230231487A1

公开(公告)日：2023-07-20

申请号：US17924569

申请日：2021-01-22

Applicant: Hitachi Astemo, Ltd.

Inventor： Junpei KUSUKAWA ,  Masahito MOCHIZUKI ,  Eiichi IDE

IPC: H02M7/00 ,  H01L25/07 ,  H01L23/049 ,  H01L23/00

CPC classification number: H02M7/003 ,  H01L25/072 ,  H01L23/049 ,  H01L24/48 ,  H01L2924/30107 ,  H01L2924/13055 ,  H01L2224/48137

Abstract: Provided are a semiconductor device, a busbar, and a power converter that can suppress an increase in the size of the device and in inductance while ensuring insulation performance between terminals. For example, a semiconductor device 1 includes a first terminal 110 projecting from a sealing body 100 along a given direction, and a second terminal 120 adjacent to the first terminal 110 with a space formed between the second terminal 120 and the first terminal 110, the second terminal 120 projecting from the sealing body 100 along a given direction in a direction of projection that is the same as a direction of projection of the first terminal 110. The first terminal 110 has a first exposed part 112 exposed outside the sealing body 100. The second terminal 120 has a second sheathed part 121 projecting from the sealing body 100, the second sheathed part 121 being sheathed with an insulating material, and a second exposed part 122 projecting from the second sheathed part 121, the second exposed part 122 being exposed outside the sealing body 100. A distance D2 along a given direction from a front end 121a of the second sheathed part 121 to the sealing body 100 is longer than a distance D1 along the given direction from a front end 112a of the first exposed part 112 to the sealing body 100.

公开(公告)号：US20230059509A1

公开(公告)日：2023-02-23

申请号：US17797148

申请日：2020-10-23

Applicant: Hitachi Astemo, Ltd.

Inventor： Akira MIMA ,  Yukio HATTORI ,  Eiichi IDE

IPC: H02M7/00 ,  H02K11/33 ,  H02K5/22

Abstract: An object of the present invention is to provide a power conversion device configured to attain suppression of heat concentration and miniaturization of the device. The power conversion device 40 includes a power module 17 for converting dc power into ac power, a first circuit substrate (power circuit substrate) 16 including a capacitor 31 for smoothing the dc power, and a casing 20 for storing the power module 17 and the first circuit substrate 16. Either the first circuit substrate 16 or the power module 17 is disposed on an inner surface 20bb of a side wall 20b having an outer wall surface 20ba of the casing 20, and the other is disposed on a predetermined inner wall surface 20a of the casing 20 to form an angle with the inner surface 20bb.

公开(公告)号：US20250006566A1

公开(公告)日：2025-01-02

申请号：US18712774

申请日：2022-11-25

Applicant: HITACHI ASTEMO, LTD.

Inventor： Nobutake TSUYUNO ,  Akira MIMA ,  Yujiro KANEKO ,  Eiichi IDE

IPC: H01L23/051 ,  H01L21/56 ,  H01L23/31 ,  H01L23/473 ,  H01L23/64 ,  H01L25/07 ,  H01L25/18 ,  H02M7/00

Abstract: A semiconductor module includes: a plurality of power semiconductor elements arranged in parallel to each other; a first conductor plate and a second conductor plate respectively bonded to an upper surface and a lower surface of the power semiconductor elements arranged in parallel to each other; a wiring substrate provided on the second conductor plate; and an electronic component mounted on the wiring substrate, the power semiconductor elements, the first conductor plate, the second conductor plate, the wiring substrate, and the electronic component being sealed with a sealing member. The first conductor plate positioned on the upper surface side of the wiring substrate has at least one of a recess and a through hole in a region facing with the electronic component on the wiring substrate.

公开(公告)号：US20240047231A1

公开(公告)日：2024-02-08

申请号：US18266405

申请日：2021-09-29

Applicant: HITACHI ASTEMO, LTD.

Inventor： Yasuhiro TSUYUKI ,  Nobutake TSUYUNO ,  Eiichi IDE ,  Yujiro KANEKO

IPC: H01L21/56 ,  H01L23/473 ,  H01L25/11 ,  H01L25/18 ,  H01L23/31

CPC classification number: H01L21/566 ,  H01L23/473 ,  H01L25/115 ,  H01L25/18 ,  H01L23/3121 ,  H01L24/32

Abstract: An electric circuit body including a power semiconductor element joined to one surface of a conductor plate; a sheet member including an insulating layer joined to the other surface of the conductor plate; a sealing member that integrally seals the sheet member, the conductor plate, and the power semiconductor element in a state where a surface of the sheet member opposite to a surface joined to the conductor plate is exposed; a cooling member that cools heat of the power semiconductor element; and a heat conduction member provided between the opposite surface of the sheet member and the cooling member, where the heat conduction member is provided over a first projection region facing the conductor plate and a second projection region facing the sealing member, and a thickness of the heat conduction member is thicker in the second projection region than in the first projection region.

公开(公告)号：US20250167059A1

公开(公告)日：2025-05-22

申请号：US18841795

申请日：2023-03-16

Applicant: HITACHI ASTEMO, LTD.

Inventor： Junpei KUSUKAWA ,  Eiichi IDE

IPC: H01L23/31 ,  H01L21/48 ,  H01L23/13 ,  H01L23/14 ,  H01L23/36 ,  H01L23/498

Abstract: A power conversion device according to the present invention comprises a semiconductor device and a wiring board. The wiring board has a through-hole, and a portion of an insulating resin and a heat spreader of the semiconductor device are disposed so as to pass through the through-hole and protrude to the other side of the wiring board. The semiconductor device has a flange section. A gap between the inner circumferential surface of the through-hole and the insulating resin of the semiconductor device inside the through-hole and/or a gap between one side of the wiring board and the flange section is filled with a first resin material, and a second resin material covering at least a connection portion between an external terminal and a power wiring layer is coated onto the one side of the wiring board.

公开(公告)号：US20220394881A1

公开(公告)日：2022-12-08

申请号：US17776857

申请日：2020-11-20

Applicant: Hitachi Astemo, Ltd.

Inventor： Yasuhiro TSUYUKI ,  Yoshio KAWAI ,  Toshiaki ISHII ,  Eiichi IDE

IPC: H05K7/20 ,  H05K5/00

Abstract: The present invention provides an in-vehicle electronic control device which further improves heat dissipation by forming a protrusion extending toward an electronic component on an inner surface of a cover portion formed of a highly thermally conductive resin in consideration of orientation of a filling material contained in the highly thermally conductive resin. An in-vehicle electronic control device of the present invention includes: a circuit board on which an electronic component is mounted; a base portion in which the circuit board is installed; and a cover portion with which the circuit board is covered together with the base portion, which is formed of a resin containing a filling material, and which has a protrusion protruding toward the electronic component, in which the protrusion is formed of a resin containing a filling material and a width of the protrusion is smaller than a width of the electronic component.