公开(公告)号：US20230314128A1

公开(公告)日：2023-10-05

申请号：US18127858

申请日：2023-03-29

Applicant: Hitachi High-Tech Corporation

Inventor： Masaya GOTO ,  Kei SAKAI ,  Satoru YAMAGUCHI ,  Junichi KAKUTA

IPC: H01J37/28 ,  G01B21/30

CPC classification number: G01B21/30 ,  H01J37/28 ,  H01J2237/0437 ,  H01J2237/24592 ,  H01J2237/2817

Abstract: A processing system and a charged particle beam apparatus for the purpose of determining the degree of growth or the presence or absence of a defect in an epitaxial layer grown in a groove or a hole such as between inner spacers from an image of the groove or the hole are proposed. In a processing system including a computer system, the computer system calculates a distance and a brightness value related to a layer between a plurality of structures from a signal profile in accordance with one direction on a two-dimensional plane related to the layer, which is obtained by irradiating the layer with an electron beam, and determines or outputs a state of the layer based on the distance and the brightness value.