公开(公告)号：US20220130638A1

公开(公告)日：2022-04-28

申请号：US17501249

申请日：2021-10-14

Applicant: Hitachi High-Tech Corporation

Inventor： Keiichiro HITOMI ,  Kenji TANIMOTO ,  Yusuke ABE ,  Takuma YAMAMOTO ,  Kei SAKAI ,  Satoru YAMAGUCHI ,  Yasunori GOTO ,  Shuuichirou TAKAHASHI

IPC: H01J37/22 ,  H01J37/147 ,  H01J37/21

Abstract: Provided is a charged particle beam device capable of focusing with high accuracy even when a charged particle beam has a large off-axis amount. The charged particle beam device generates an observation image of a sample by irradiating the sample with a charged particle beam, and includes: a deflection unit that inclines the charged particle beam; a focusing lens that focuses the charged particle beam; an adjustment unit that adjusts a lens strength of the focusing lens based on an evaluation value calculated from the observation image; a storage unit that stores a relationship between a visual field movement amount and the lens strength; and a filter setting unit that calculates the visual field movement amount based on an inclination angle of the charged particle beam and the relationship, and sets an image filter to be superimposed on the observation image based on the calculated visual field movement amount.

公开(公告)号：US20230314128A1

公开(公告)日：2023-10-05

申请号：US18127858

申请日：2023-03-29

Applicant: Hitachi High-Tech Corporation

Inventor： Masaya GOTO ,  Kei SAKAI ,  Satoru YAMAGUCHI ,  Junichi KAKUTA

IPC: H01J37/28 ,  G01B21/30

CPC classification number: G01B21/30 ,  H01J37/28 ,  H01J2237/0437 ,  H01J2237/24592 ,  H01J2237/2817

Abstract: A processing system and a charged particle beam apparatus for the purpose of determining the degree of growth or the presence or absence of a defect in an epitaxial layer grown in a groove or a hole such as between inner spacers from an image of the groove or the hole are proposed. In a processing system including a computer system, the computer system calculates a distance and a brightness value related to a layer between a plurality of structures from a signal profile in accordance with one direction on a two-dimensional plane related to the layer, which is obtained by irradiating the layer with an electron beam, and determines or outputs a state of the layer based on the distance and the brightness value.

公开(公告)号：US20220165537A1

公开(公告)日：2022-05-26

申请号：US17449286

申请日：2021-09-29

Applicant: Hitachi High-Tech Corporation

Inventor： Motonobu HOMMI ,  Satoru YAMAGUCHI ,  Kei SAKAI ,  Hiroshi NISHIHAMA

IPC: H01J37/28 ,  H01J37/22 ,  H01J37/244

Abstract: To shorten a time required for evaluation of a recipe while suppressing an increase in a data amount. A charged particle beam device includes a microscope that scans a charged particle beam on a sample, detects secondary particles emitted from the sample, and outputs a detection signal and a computer system that generates a frame image based on the detection signal and processes an image based on the frame images. The computer system calculates a moment image between a plurality of the frame images, and calculates a feature amount data of the frame image based on a moment.

公开(公告)号：US20230317406A1

公开(公告)日：2023-10-05

申请号：US18127864

申请日：2023-03-29

Applicant: Hitachi High-Tech Corporation

Inventor： Yuto KAWASHIMA ,  Satoru YAMAGUCHI ,  Yasunori TAKASUGI

IPC: H01J37/21 ,  H01J37/244 ,  H01J37/28

CPC classification number: H01J37/21 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/2448 ,  H01J2237/216 ,  H01J2237/24578 ,  H01J37/1472

Abstract: A charged particle beam system that improves throughput by applying an approximate expression created using a wafer to be actually measured is provided. The invention is directed to a charged particle beam system including a charged particle beam device that includes a detector configured to detect a signal particle obtained by irradiating a sample with a charged particle beam and a computer system that controls an operation of the charged particle beam device, in which the computer system executes a process of performing autofocus on each of a plurality of peripheral AF points set in the sample and outside a measurement area, and acquiring focus information of the plurality of AF points, a process of approximating focus distribution within the measurement area based on the focus information of the plurality of peripheral AF points, and a process of measuring each measurement point within the measurement area of the same sample as the sample from which the focus information is acquired, using the approximated focus distribution.

公开(公告)号：US20220277434A1

公开(公告)日：2022-09-01

申请号：US17634805

申请日：2019-08-30

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Ryou YUMIBA ,  Kei SAKAI ,  Satoru YAMAGUCHI

IPC: G06T7/00 ,  G06V10/774 ,  G06T7/11 ,  G06V10/82 ,  G06T7/66 ,  G06V10/764 ,  G06V10/72 ,  G01N21/95

Abstract: The present invention proposes a technique for enabling the execution of measurement processing without referring to a design drawing for which it is difficult to adjust or obtain parameters for image processing that requires knowhow. This measurement system according to the present disclosure refers to a learning model generated on the basis of teaching data, which is generated from a sample image of a semiconductor, and the sample image, generates a region-segmented image from an input image (measurement subject) of a semiconductor having a predetermined structure, and uses the region-segmented image to perform image measurement. Here, the teaching data is an image in which labels, which include a structure of the semiconductor in the sample image, are assigned to each pixel of the image, and the learning model includes parameters for deducing teaching data from the sample image (see indicator 1).