公开(公告)号：US5084751A

公开(公告)日：1992-01-28

申请号：US708844

申请日：1991-05-30

申请人： Hitoshi Iwata ,  Yasuo Imaeda ,  Koichi Jinkai ,  Kenichi Kinoshita

发明人： Hitoshi Iwata ,  Yasuo Imaeda ,  Koichi Jinkai ,  Kenichi Kinoshita

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/08 ,  H01L29/732

CPC分类号： H01L29/0813

摘要： A bipolar transistor of a multi-emitter construction comprises a base diffusion layer formed in a substrate, a number of emitter diffusion layers formed in the base diffusion layer and arranged in a two-dimensional pattern, a base electrode film formed on the base diffusion layer, the base electrode film having a branch connection portion of a mesh-like shape surrounding each group consisting of at least one of the emitter diffusion layers, the base electrode film also having a main connection portion connected to said branch connection portion, and emitter electrode films formed respectively on said emitter electrode layers.

摘要翻译： 多发射极结构的双极晶体管包括形成在基板中的基极扩散层，形成在基极扩散层中并以二维图案配置的多个发射极扩散层，形成在基极扩散层上的基极膜 所述基极电极膜具有围绕由至少一个所述发射极扩散层构成的组的网状形状的分支连接部，所述基极电极膜也具有连接到所述分支连接部的主连接部，以及发射极 分别形成在所述发射极电极层上的膜。

公开(公告)号：US5594271A

公开(公告)日：1997-01-14

申请号：US354085

申请日：1994-12-06

申请人： Hitoshi Iwata ,  Koichi Jinkai ,  Yasuo Imaeda

发明人： Hitoshi Iwata ,  Koichi Jinkai ,  Yasuo Imaeda

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/8222 ,  H01L27/06 ,  H01L29/06 ,  H01L29/08 ,  H01L29/72 ,  H01L29/732 ,  H03K17/08 ,  H01L27/102

CPC分类号： H01L29/0692 ,  H01L29/0813

摘要： A bipolar transistor of the multi-emitter type which is provided with a large number of emitter diffusion layers formed in the two-dimensionally arranged state on a base diffusion layer of a substrate, a large number of emitter electrode films formed respectively correspondingly on the emitter diffusion layers, a base electrode film formed on the base diffusion layer, and a collector electrode film formed on the substrate, and the transistor is further provided with a wiring film commonly connected to the large number of emitter electrode films except at least one of the emitter electrode films.

摘要翻译： 一种多发射体型双极晶体管，其在基板的基极扩散层上设置有以二维排列状态形成的大量发射极扩散层，分别相应地形成在发射极上的多个发射极电极膜 扩散层，形成在基极扩散层上的基极电极膜和形成在基板上的集电极膜，并且晶体管还设置有通常连接到大量发射极电极膜的布线膜，除了至少一个 发射极电极膜。

公开(公告)号：US5296732A

公开(公告)日：1994-03-22

申请号：US29966

申请日：1993-03-09

申请人： Hitoshi Iwata ,  Koichi Jinkai ,  Yasuo Imaeda

发明人： Hitoshi Iwata ,  Koichi Jinkai ,  Yasuo Imaeda

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/8222 ,  H01L27/06 ,  H01L29/06 ,  H01L29/08 ,  H01L29/72 ,  H01L29/732 ,  H03K17/08 ,  H01L29/40

CPC分类号： H01L29/0692 ,  H01L29/0813

摘要： A bipolar transistor of the multi-emitter type which is provided with a large number of emitter diffusion layers formed in the two-dimensionally arranged state on a base diffusion layer of a substrate, a large number of emitter electrode films formed respectively correspondingly on the emitter diffusion layers, a base electrode film formed on the base diffusion layer, and a collector electrode film formed on the substrate, and the transistor is further provided with a wiring film commonly connected to the large number of emitter electrode films except at least one of the emitter electrode films.

摘要翻译： 一种多发射体型双极晶体管，其在基板的基极扩散层上设置有以二维排列状态形成的大量发射极扩散层，分别相应地形成在发射极上的多个发射极电极膜 扩散层，形成在基极扩散层上的基极电极膜和形成在基板上的集电极膜，并且晶体管还设置有通常连接到大量发射极电极膜的布线膜，除了至少一个 发射极电极膜。