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    METHOD OF PREPARING SOLID PARTICULATES AND SOLID PARTICULATES PREPARED USING SAME
    3.
    发明申请
    METHOD OF PREPARING SOLID PARTICULATES AND SOLID PARTICULATES PREPARED USING SAME 审中-公开
    制备固体颗粒的方法和使用其制备的固体颗粒

    公开(公告)号：US20090061228A1

    公开(公告)日：2009-03-05

    申请号：US12204144

    申请日：2008-09-04

    申请人： Hae-Ryong CHUNG ,  Eun-Sang KWON ,  Hachiro NAKANISHI ,  Hidetoshi OIKAWA ,  Hitoshi KASAI

    发明人： Hae-Ryong CHUNG ,  Eun-Sang KWON ,  Hachiro NAKANISHI ,  Hidetoshi OIKAWA ,  Hitoshi KASAI

    IPC分类号： B32B5/16 ,  C07C15/02

    CPC分类号： C07C15/38 ,  C07C2603/28 ,  Y10T428/2982

    摘要： The present invention relates to a method of preparing solid particulates and solid particulates prepared by using the method. The method of preparing solid particulates includes dissolving an organic or inorganic compound in a first solvent to provide an organic or inorganic compound-included solution, dispersing the organic or inorganic compound-included solution in a second solvent to provide an emulsion, and concentrating the emulsion in a dispersing medium to precipitate the organic or inorganic compound as solid particulates to provide a dispersion including the solid particulates. The first solvent is an organic solvent or an aqueous solvent, and the second solvent is an organic solvent or an aqueous solvent that is not compatible with the first solvent. It is possible to prepare solid particulates from a wide range of organic or inorganic compounds in accordance with the present invention, and in addition, it is possible to prepare a dispersion including organic or inorganic compound particulates in a high concentration. Therefore, according to the method of the present invention, the solid particulates can be mass-produced.

    摘要翻译： 本发明涉及使用该方法制备固体颗粒和固体颗粒的方法。 制备固体颗粒的方法包括将有机或无机化合物溶解在第一溶剂中以提供含有机或无机化合物的溶液，将含有机或无机化合物的溶液分散在第二溶剂中以提供乳液，并将乳液浓缩 在分散介质中将有机或无机化合物沉淀为固体颗粒，以提供包括固体颗粒的分散体。 第一溶剂是有机溶剂或水性溶剂，第二溶剂是与第一溶剂不相容的有机溶剂或水性溶剂。 可以根据本发明从广泛的有机或无机化合物制备固体颗粒，此外，可以制备高浓度有机或无机化合物颗粒的分散体。 因此，根据本发明的方法，能够大量生产固体微粒。

    SUBSTRATE HAVING THIN FILM OF GaN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GaN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    4.
    发明申请
    SUBSTRATE HAVING THIN FILM OF GaN JOINED THEREON AND METHOD OF FABRICATING THE SAME, AND A GaN-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
    具有GaN的薄膜的衬底及其制造方法以及GaN基半导体器件及其制造方法

    公开(公告)号：US20100210089A1

    公开(公告)日：2010-08-19

    申请号：US12765357

    申请日：2010-04-22

    申请人： Hitoshi KASAI ,  Akihiro Hachigo ,  Yoshiki Miura ,  Katsushi Akita

    发明人： Hitoshi KASAI ,  Akihiro Hachigo ,  Yoshiki Miura ,  Katsushi Akita

    IPC分类号： H01L21/30

    CPC分类号： H01L22/26 ,  H01L21/187 ,  H01L21/76251 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/0075 ,  H01L2924/0002 ,  H01L2924/00

    摘要： There is provided a method of producing a thin GaN film-joined substrate, including the steps of: joining on a GaN bulk crystalline body a substrate different in type or chemical composition from GaN; and dividing the GaN bulk crystalline body at a plane having a distance of at least 0.1 μm and at most 100 μm from an interface thereof with the substrate different in type, to provide a thin film of GaN on the substrate different in type, wherein the GaN bulk crystalline body had a surface joined to the substrate different in type, that has a maximum surface roughness Rmax of at most 20 μm. Thus a GaN-based semiconductor device including a thin GaN film-joined substrate including a substrate different in type and a thin film of GaN joined firmly on the substrate different in type, and at least one GaN-based semiconductor layer deposited on the thin film of GaN, can be fabricated at low cost.

    摘要翻译： 提供了一种制造薄GaN膜接合衬底的方法，包括以下步骤：将GaN体结构体与GaN的类型或化学组成不同的衬底接合; 并且将GaN本体结晶体在距离其不同类型的衬底的界面至少0.1μm至多100μm的平面处分割，以在衬底上提供类型不同的GaN薄膜，其中， GaN体结晶体具有与不同类型的基板接合的表面，其最大表面粗糙度Rmax至多为20μm。 因此，包括具有类型不同的衬底的薄GaN接合衬底和GaN的薄膜牢固地连接在不同类型的衬底上的GaN基半导体器件和沉积在薄膜上的至少一个GaN基半导体层 的GaN，可以以低成本制造。