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126 条记录 (耗时 0.034 秒)

    Traction control device
    2.
    发明授权
    Traction control device 有权
    牵引控制装置

    公开(公告)号：US08725360B2

    公开(公告)日：2014-05-13

    申请号：US13140537

    申请日：2009-12-25

    申请人： Koji Uematsu ,  Kazuhiro Hatake ,  Yuya Kusumoto

    发明人： Koji Uematsu ,  Kazuhiro Hatake ,  Yuya Kusumoto

    IPC分类号： G06G7/70

    CPC分类号： B60W30/18172 ,  B60K17/35 ,  B60T8/175 ,  B60T8/4809 ,  B60T10/00 ,  B60T2201/14 ,  B60T2210/16 ,  B60W10/14 ,  B60W10/16 ,  B60W10/184 ,  B60W2300/17 ,  B60W2510/0233 ,  B60W2520/263 ,  B60W2520/266 ,  B60W2520/28 ,  B60W2720/403 ,  B60W2720/406

    摘要： The invention provides a traction control device capable of ensuring a sufficient acceleration and course traceability during the turning of a vehicle irrespective of the type of driving system or a road surface condition. A traction control device of the invention includes: a control-start determiner that determines whether or not to control a braking mechanism; and a traction force estimating section that estimates a traction force between each of wheels and the road surface. The traction force estimating section includes: a control condition determining section that determines a control condition of the braking mechanism based on a result of the determination of the control-start determiner; a traction force initial value setting section that sets an initial value in accordance with a result of the determination of the control condition determining section; and a traction force modifying section that modifies the traction force based on a control deviation.

    摘要翻译： 本发明提供了一种牵引力控制装置，其能够确保在车辆转动期间的足够的加速度和行程可追溯性，而与驾驶系统的类型或路面状况无关。 本发明的牵引力控制装置包括：控制启动确定器，其确定是否控制制动机构; 以及牵引力估计部，其估计各车轮与路面之间的牵引力。 牵引力估计部分包括：控制条件确定部，其基于控制开始确定器的确定结果确定制动机构的控制状态; 牵引力初始值设定部，其根据所述控制条件决定部的判定结果来设定初始值; 以及牵引力调整部，其基于控制偏差来修正牵引力。

    METHOD OF MANUFACTURING SEMICONDUCTOR WAFER, AND COMPOSITE BASE AND COMPOSITE SUBSTRATE FOR USE IN THAT METHOD
    4.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR WAFER, AND COMPOSITE BASE AND COMPOSITE SUBSTRATE FOR USE IN THAT METHOD 有权
    制造半导体波形的方法以及用于该方法的复合基底和复合基板

    公开(公告)号：US20120228613A1

    公开(公告)日：2012-09-13

    申请号：US13107286

    申请日：2011-05-13

    申请人： Yuki SEKI ,  Issei Satoh ,  Koji Uematsu ,  Yoshiyuki Yamamoto

    发明人： Yuki SEKI ,  Issei Satoh ,  Koji Uematsu ,  Yoshiyuki Yamamoto

    IPC分类号： H01L29/04 ,  B32B3/00 ,  H01L27/12 ,  H01L29/02 ,  H01L21/762 ,  H01L29/22

    CPC分类号： H01L29/0684 ,  B32B2264/102 ,  B32B2307/704 ,  B32B2457/14 ,  H01L21/76254

    摘要： A method of manufacturing a semiconductor wafer of the present invention includes the steps of: obtaining a composite base by forming a base surface flattening layer having a surface RMS roughness of not more than 1.0 nm on a base; obtaining a composite substrate by attaching a semiconductor crystal layer to a side of the composite base where the base surface flattening layer is located; growing at least one semiconductor layer on the semiconductor crystal layer of the composite substrate; and obtaining the semiconductor wafer including the semiconductor crystal layer and the semiconductor layer by removing the base surface flattening layer by wet etching and thereby separating the semiconductor crystal layer from the base. Thus, a method of manufacturing a semiconductor wafer capable of efficiently manufacturing the semiconductor wafer regardless of the type of a base, and a composite base and a composite substrate suitably used in that manufacturing method are provided to efficiently manufacture a semiconductor device.

    摘要翻译： 本发明的制造半导体晶片的方法包括以下步骤：通过在基底上形成表面RMS粗糙度不大于1.0nm的基面平坦化层来获得复合基底; 通过将半导体晶体层附着到所述复合基底的所述基面平坦化层所在的一侧来获得复合基板; 在复合衬底的半导体晶体层上生长至少一个半导体层; 以及通过湿法蚀刻去除基底表面平坦化层，从而将半导体晶体层与基底分离，从而获得包括半导体晶体层和半导体层的半导体晶片。 因此，提供一种制造半导体晶片的方法，而不管基底的类型如何，以及适用于该制造方法的复合基底和复合基底都能有效地制造半导体晶片，以有效地制造半导体器件。

    GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME
    5.
    发明申请
    GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME 有权
    GaN晶体自由显示基板及其制造方法

    公开(公告)号：US20120034149A1

    公开(公告)日：2012-02-09

    申请号：US13235989

    申请日：2011-09-19

    申请人： Shinsuke Fujiwara ,  Koji Uematsu ,  Hitoshi Kasai ,  Takuji Okahisa

    发明人： Shinsuke Fujiwara ,  Koji Uematsu ,  Hitoshi Kasai ,  Takuji Okahisa

    IPC分类号： C01B21/06 ,  C30B25/02

    CPC分类号： H01L33/325 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/02664

    摘要： The invention relates to a GaN-crystal free-standing substrate obtained from a GaN crystal grown by HVPE with a (0001) plane serving as a crystal growth plane and at least one plane of a {10-11} plane and a {11-22} plane serving as a crystal growth plane that constitutes a facet crystal region, except for the side surface of the crystal, wherein the (0001)-plane-growth crystal region has a carbon concentration of 5×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or more and 2×1018 atoms/cm3 or less, and an oxygen concentration of 1×1017 atoms/cm3 or less; and the facet crystal region has a carbon concentration of 3×1016 atoms/cm3 or less, a silicon concentration of 5×1017 atoms/cm3 or less, and an oxygen concentration of 5×1017 atoms/cm3 or more and 5×1018 atoms/cm3 or less.

    摘要翻译： 本发明涉及由具有（0001）面作为晶体生长面的HVPE生长的GaN晶体和{10-11}面和{11-11面]的至少一个平面而获得的GaN结晶自立式基板， （0001）平面生长晶体区域的碳浓度为5×1016原子/ cm3以下的构成除了晶体侧面以外的构成晶面区域的晶体生长面， 硅浓度为5×10 17原子/ cm 3以上且2×10 18原子/ cm 3以下，氧浓度为1×10 17原子/ cm 3以下。 并且小面晶体区域的碳浓度为3×1016原子/ cm3以下，硅浓度为5×10 17原子/ cm 3以下，氧浓度为5×10 17原子/ cm 3以上且5×10 18原子 / cm3以下。

    III-nitride crystal manufacturing method, III-nitride crystal substrate, and III-nitride semiconductor device
    7.
    发明授权
    III-nitride crystal manufacturing method, III-nitride crystal substrate, and III-nitride semiconductor device 有权
    III族氮化物晶体制造方法，III族氮化物晶体衬底和III族氮化物半导体器件

    公开(公告)号：US07998847B2

    公开(公告)日：2011-08-16

    申请号：US12297311

    申请日：2007-11-15

    申请人： Ryu Hirota ,  Koji Uematsu ,  Tomohiro Kawase

    发明人： Ryu Hirota ,  Koji Uematsu ,  Tomohiro Kawase

    IPC分类号： H01L21/36

    CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B19/00 ,  C30B33/10 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02625 ,  H01L21/02628 ,  H01L21/02639 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/16 ,  H01L33/32

    摘要： Affords methods of manufacturing bulk III-nitride crystals whereby at least the surface dislocation density is low globally.The present III-nitride crystal manufacturing method includes: a step of preparing an undersubstrate (1) containing a III-nitride seed crystal, the III-nitride seed crystal having a matrix (1s), and inversion domains (1t) in which the polarity in the directions is inverted with respect to the matrix (1s); and a step of growing a III-nitride crystal (10) onto the matrix (1s) and inversion domains (1t) of the undersubstrate (1) by a liquid-phase technique; and is characterized in that a first region (10s), being where the growth rate of III-nitride crystal (10) growing onto the matrix (1s) is greater, covers second regions (10t), being where the growth rate of III-nitride crystal (10) growing onto the inversion domains (1t) is lesser.

    摘要翻译： 提供制造本体III族氮化物晶体的方法，其中至少表面位错密度在全局下低。 本III-氮化物晶体制造方法包括：制备含有III族氮化物晶种的下衬底（1），具有基体（1s）的III族氮化物晶种和具有极性的反转畴（1t）的步骤 在<0001>方向上相对于矩阵（1s）反转; 以及通过液相技术将III族氮化物晶体（10）生长到下衬底（1）的基体（1s）和反转畴（1t）上的步骤; 其特征在于，生长在基体（1s）上的III族氮化物晶体（10）的生长速度更大的第一区域（10s）覆盖第二区域（10t），其中III- 生长到反向域（1t）上的氮化物晶体（10）较小。

    METHOD FOR GROWING GaN CRYSTAL
    8.
    发明申请
    METHOD FOR GROWING GaN CRYSTAL 审中-公开
    GaN晶体生长方法

    公开(公告)号：US20110100292A1

    公开(公告)日：2011-05-05

    申请号：US13003540

    申请日：2009-07-14

    申请人： Koji Uematsu ,  Hiroaki Yoshida ,  Masanori Morishita ,  Shinsuke Fujiwara

    发明人： Koji Uematsu ,  Hiroaki Yoshida ,  Masanori Morishita ,  Shinsuke Fujiwara

    IPC分类号： C30B19/04

    CPC分类号： H01L21/0254 ,  C30B9/00 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/02625 ,  H01L21/02658 ,  H01L33/0075 ,  H01L33/16

    摘要： A method for growing a GaN crystal includes a step of preparing a substrate (10) that includes a main surface (10m) and includes a Gax Aly In1-x-y N seed crystal (10a) including the main surface (10m) and a step of growing a GaN crystal (20) on the main surface (10m) at an atmosphere temperature of 800° C. or more and 1500° C. or less and at an atmosphere pressure of 500 atmospheres or more and less than 2000 atmospheres by bringing a solution (7) provided by dissolving (5) nitrogen in a Ga melt (3) into contact with the main surface (10m) of the substrate (10). The method further includes, after the step of preparing the substrate (10) and before the step of growing the GaN crystal (20), a step of etching the main surface (10m) of the substrate (10). Thus, a method for growing a GaN crystal having a low dislocation density and high crystallinity is provided without adding impurities other than raw materials to the melt and without increasing the size of a crystal growth apparatus.

    摘要翻译： 一种用于生长GaN晶体的方法包括制备包括主表面（10m）并包括主表面（10m）的Gax Aly In 1-xy N晶种（10a）的衬底（10）的步骤和 在800℃以上且1500℃以下的气氛温度和500大气压以上且小于2000个大气压的气氛下，在主表面（10μm）上生长GaN晶体（20），通过使 通过将（5）氮在Ga熔体（3）中溶解以与衬底（10）的主表面（10m）接触而提供的溶液（7）。 该方法还包括在制备衬底（10）的步骤之后和生长GaN晶体（20）的步骤之前，蚀刻衬底（10）的主表面（10m）的步骤。 因此，提供了一种生长具有低位错密度和高结晶度的GaN晶体的方法，而不增加熔体中的原料以外的杂质，而不增加晶体生长装置的尺寸。

    Group III nitride crystal and method of its growth
    9.
    发明授权
    Group III nitride crystal and method of its growth 有权
    III族氮化物晶体及其生长方法

    公开(公告)号：US07892513B2

    公开(公告)日：2011-02-22

    申请号：US12359342

    申请日：2009-01-26

    申请人： Shinsuke Fujiwara ,  Hiroaki Yoshida ,  Ryu Hirota ,  Koji Uematsu ,  Haruko Tanaka

    发明人： Shinsuke Fujiwara ,  Hiroaki Yoshida ,  Ryu Hirota ,  Koji Uematsu ,  Haruko Tanaka

    IPC分类号： C01B21/06

    CPC分类号： C30B29/403 ,  C30B9/06 ,  C30B19/04 ,  C30B29/406

    摘要： Affords group III nitride crystal growth methods enabling crystal to be grown in bulk by a liquid-phase technique. One such method of growing group III nitride crystal from solution is provided with: a step of preparing a substrate having a principal face and including at least on its principal-face side a group III nitride seed crystal having the same chemical composition as the group III nitride crystal, and whose average density of threading dislocations along the principal face being 5×106 cm−2 or less; and a step of bringing into contact with the principal face of the substrate a solution in which a nitrogen-containing gas is dissolved into a group III metal-containing solvent, to grow group III nitride crystal onto the principal face.

    摘要翻译： 提供III族氮化物晶体生长方法，使得晶体能够通过液相技术在本体中生长。 提供了从溶液中生长III族氮化物晶体的一种这样的方法：制备具有主面并且至少在其主面上至少包括与III组相同的化学组成的III族氮化物晶种的基板的步骤 氮化物晶体，并且其主面上的穿透位错的平均密度为5×10 6 cm -2以下; 以及使含氮气体溶解在含有III族金属的溶剂中的溶液与基板的主面接触的步骤，将III族氮化物晶体生长到主面上。

    Method for Growing Group III Nitride Crystal
    10.
    发明申请
    Method for Growing Group III Nitride Crystal 审中-公开
    生长III族氮化物晶体的方法

    公开(公告)号：US20100229786A1

    公开(公告)日：2010-09-16

    申请号：US12681624

    申请日：2008-09-19

    申请人： Koji Uematsu ,  Hiroaki Yoshida ,  Ryu Hirota ,  Shinsuke Fujiwara ,  Haruko Tanaka

    发明人： Koji Uematsu ,  Hiroaki Yoshida ,  Ryu Hirota ,  Shinsuke Fujiwara ,  Haruko Tanaka

    IPC分类号： C30B19/12

    CPC分类号： C30B29/403 ,  C30B19/04

    摘要： A III-nitride crystal growth method that enables growing large-scale crystal under a liquid-phase technique is made available. The present III-nitride crystal growth method is a method of growing III-nitride crystal (10) by a liquid-phase technique, and is provided with: a step of preparing a III-nitride crystal substrate (1) having the same chemical composition as the III-nitride crystal (10), and having a thickness of not less than 0.5 mm; and a step of contacting onto a major surface (1m) of the III-nitride crystal substrate (1) a solution in which a nitrogen-containing gas (5) is dissolved in a solvent (3) that includes a Group-III metal, to grow III-nitride crystal (10) onto the major surface (1m).

    摘要翻译： 可以获得能够在液相技术下生长大规模晶体的III族氮化物晶体生长方法。 本III-氮化物晶体生长方法是通过液相技术生长III族氮化物晶体（10）的方法，并且具有：制备具有相同化学组成的III族氮化物晶体衬底（1）的步骤 作为III族氮化物晶体（10），并且具有不小于0.5mm的厚度; 以及将含氮气体（5）溶解在包含III族金属的溶剂（3）中的溶液与III族氮化物晶体基板（1）的主表面（1m）接触的步骤， 以将III族氮化物晶体（10）生长到主表面（1m）上。