公开(公告)号：US08344404B2

公开(公告)日：2013-01-01

申请号：US12866922

申请日：2009-01-28

申请人： Shunsuke Fujita ,  Yoshio Umayahara ,  Akihiko Sakamoto

发明人： Shunsuke Fujita ,  Yoshio Umayahara ,  Akihiko Sakamoto

IPC分类号： H01L33/00

CPC分类号： C03C12/00 ,  C03B19/06 ,  C03B32/005 ,  C03B2201/70 ,  C03C3/19 ,  C03C14/006 ,  C03C2214/16 ,  H01L33/501 ,  H01L33/505 ,  H01L2933/0041 ,  Y10T428/1036 ,  Y10T428/24479 ,  Y10T428/2457 ,  Y10T428/24612

摘要： To provide a wavelength conversion member having good surface accuracy and dimensional accuracy even when processed in various shapes, and a method for manufacturing the same. A method for manufacturing a wavelength conversion member, including the steps of: subjecting a preform made of a powder mixture containing a glass powder and an inorganic phosphor powder to heat treatment, thereby obtaining a sintered powder product; and re-press molding the sintered powder product with a die.

摘要翻译： 为了提供即使在各种形状的处理时也具有良好的表面精度和尺寸精度的波长转换构件及其制造方法。 一种制造波长转换部件的方法，包括以下步骤：对由玻璃粉末和无机荧光体粉末组成的粉末混合物制成的预制件进行热处理，从而获得烧结粉末产品; 并用模具再次压制烧结粉末产品。

公开(公告)号：US20110065265A1

公开(公告)日：2011-03-17

申请号：US12949268

申请日：2010-11-18

申请人： Hitoshi KASAI ,  Takuji Okahisa ,  Shunsuke Fujita ,  Naoki Matsumoto ,  Hideuki Ijiri ,  Fumitaka Sato ,  Kensaku Motoki ,  Seiji Nakahata ,  Koji Uematsu ,  Ryu Hirota

发明人： Hitoshi KASAI ,  Takuji Okahisa ,  Shunsuke Fujita ,  Naoki Matsumoto ,  Hideuki Ijiri ,  Fumitaka Sato ,  Kensaku Motoki ,  Seiji Nakahata ,  Koji Uematsu ,  Ryu Hirota

IPC分类号： H01L21/20

CPC分类号： H01L21/02617 ,  C23C16/303 ,  C23C16/4405 ,  C23C16/4488 ,  C30B23/02 ,  C30B25/02 ,  C30B29/403

摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。 因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

公开(公告)号：US07825409B2

公开(公告)日：2010-11-02

申请号：US11730649

申请日：2007-04-03

申请人： Shunsuke Fujita ,  Hitoshi Kasai

发明人： Shunsuke Fujita ,  Hitoshi Kasai

IPC分类号： H01L23/58

CPC分类号： C30B29/406 ,  C30B33/00 ,  Y10S117/902

摘要： A GaN crystal substrate has a crystal growth surface on which a crystal is grown, and a rear surface opposite to the crystal growth surface. The crystal growth surface has a roughness Ra(C)of at most 10 nm, and the rear surface has a roughness Ra(R) of at least 0.5 μm and at most 10 μm. A ratio Ra(R)/Ra(C) of the surface roughness Ra(R) to the surface roughness Ra(C) is at least 50. Thus, a GaN crystal substrate of which front and rear surfaces are distinguishable from each other is provided, without impairing the morphology of a semiconductor layer grown on the GaN crystal substrate.

摘要翻译： GaN晶体衬底具有生长晶体的晶体生长表面和与晶体生长表面相对的后表面。 晶体生长面的粗糙度Ra（℃）为10nm以下，后表面的粗糙度Ra（R）为0.5μm以上且10μm以下。 表面粗糙度Ra（R）与表面粗糙度Ra（C）的比Ra（R）/ Ra（C）至少为50.因此，表面和背面彼此区分的GaN晶体基板是 而不损害在GaN晶体衬底上生长的半导体层的形态。

公开(公告)号：US20100155666A1

公开(公告)日：2010-06-24

申请号：US12308371

申请日：2007-05-15

申请人： Shunsuke Fujita ,  Yoshio Umayahara ,  Masaru Iwao ,  Takemi Kikutani

发明人： Shunsuke Fujita ,  Yoshio Umayahara ,  Masaru Iwao ,  Takemi Kikutani

IPC分类号： C09K11/08

CPC分类号： C09K11/025 ,  C03C8/08 ,  C03C8/14 ,  C09K11/7734

摘要： Disclosed is a phosphor composite material which can be fired at low temperatures and enables to obtain a phosphor composite member which is excellent in weather resistance and reduced in deterioration after long use. Also disclosed is a phosphor composite member obtained by firing such a phosphor composite material. Specifically disclosed is a phosphor composite material composed of a glass powder and a phosphor powder, which is characterized in that the glass powder is composed of SnO—P2O5—B2O3 glass.

摘要翻译： 公开了一种能够在低温下烧制的荧光体复合材料，能够得到耐久性优异，长时间使用后的劣化降低的荧光体复合部件。 还公开了通过烧制这种荧光体复合材料而获得的荧光体复合部件。 具体公开了由玻璃粉末和荧光体粉末组成的荧光体复合材料，其特征在于，玻璃粉末由SnO-P 2 O 5 -B 2 O 3玻璃构成。

公开(公告)号：US20070280872A1

公开(公告)日：2007-12-06

申请号：US11806888

申请日：2007-06-05

申请人： Takuji Okahisa ,  Kensaku Motoki ,  Koji Uematsu ,  Seiji Nakahata ,  Ryu Hirota ,  Hideyuki Ijiri ,  Hitoshi Kasai ,  Shunsuke Fujita ,  Fumitaka Sato ,  Toru Matsuoka

发明人： Takuji Okahisa ,  Kensaku Motoki ,  Koji Uematsu ,  Seiji Nakahata ,  Ryu Hirota ,  Hideyuki Ijiri ,  Hitoshi Kasai ,  Shunsuke Fujita ,  Fumitaka Sato ,  Toru Matsuoka

IPC分类号： C30B19/00 ,  C01B21/06 ,  H01L21/322

CPC分类号： C30B29/406 ,  C01B21/0632 ,  C01P2002/54 ,  C30B25/183 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0257 ,  H01L21/02609 ,  H01L21/02639 ,  H01L21/02642

摘要： The GaN facet growth method produces defect accumulating regions H on masks by forming a dotmask or a stripemask on an undersubstrate, growing GaN in a reaction furnace in vapor phase, inducing GaN crystals on exposed parts without covering the masks, inviting facets starting from verges of the masks and producing defect accumulating regions H on the mask. The defect accumulating regions H have four versions, that is, non (O), polycrystal (P), c-axis inclining single crystal (A) and orientation inversion (J). The best is the orientation inversion region (J). A sign of occurrence of the orientation inversion regions (J) is beaks of inversion orientation appearing on facets. GaN is grown on a masked undersubstrate by supplying a carbon material at a hydrocarbon partial pressure of 10 Pa to 5 kPa for 0.5 hour to 2 hour by an HVPE facet growth method without burying facets.

摘要翻译： GaN面生长方法通过在下衬底上形成网状掩模或剥离掩模来形成掩模上的缺陷积聚区H，在气相中在反应炉中生长GaN，在不覆盖掩模的情况下在暴露部分上诱导GaN晶体， 掩模，并在掩模上产生缺陷累积区域H. 缺陷积聚区H具有四种形式，即非（O），多晶（P），c轴倾斜单晶（A）和取向反转（J）。 最好的是取向反演区（J）。 取向反转区域（J）的发生的标志是出现在面上的反转取向的喙。 通过在没有掩埋面的HVPE刻面生长法中，通过以10Pa〜5kPa的烃分压供给0.5小时〜2小时的碳材料，在掩蔽的底基板上生长GaN。

公开(公告)号：US5235542A

公开(公告)日：1993-08-10

申请号：US776642

申请日：1991-10-15

申请人： Yutaka Hayashi ,  Iwao Hamaguchi ,  Shunsuke Fujita

发明人： Yutaka Hayashi ,  Iwao Hamaguchi ,  Shunsuke Fujita

IPC分类号： H01L27/146

CPC分类号： H01L27/14643

摘要： An apparatus for converting optical information into an electrical information signal includes a plurality of one-dimensional conversion arrays arranged in parallel form. Each one-dimensional conversion array has first and second photoelectric conversion structures integrally formed. The first photoelectric conversion structure has photoelectric conversion elements each having a light receiving surface onto which an information light is projected. The second photoelectric conversion structure has photoelectric conversion elements each having a sweep light receiving surface onto which a sweep light is projected. The sweep light has a cross section which simultaneously scans the sweep light receiving surface of one of the photoelectric conversion elements included in each of the one-dimensional conversion arrays. The electrical information signal is read out from the photoelectric conversion elements provided in the first photoelectric conversion structure when the sweep light is projected onto the photoelectric conversion elements provided in the second photoelectric conversion structure.

摘要翻译： 用于将光学信息转换为电信息信号的装置包括以并行形式布置的多个一维转换阵列。 每一维转换阵列具有一体形成的第一和第二光电转换结构。 第一光电转换结构具有各自具有投影信息光的受光面的光电转换元件。 第二光电转换结构具有光电转换元件，每个光电转换元件具有投射有扫描光的扫掠光接收表面。 扫描光具有同时扫描包括在每个一维转换阵列中的一个光电转换元件的扫描光接收表面的横截面。 当扫描光投射到设置在第二光电转换结构中的光电转换元件上时，从设置在第一光电转换结构中的光电转换元件读出电信息信号。

公开(公告)号：US08404569B2

公开(公告)日：2013-03-26

申请号：US12949268

申请日：2010-11-18

申请人： Hitoshi Kasai ,  Takuji Okahisa ,  Shunsuke Fujita ,  Naoki Matsumoto ,  Hideyuki Ijiri ,  Fumitaka Sato ,  Kensaku Motoki ,  Seiji Nakahata ,  Koji Uematsu ,  Ryu Hirota

发明人： Hitoshi Kasai ,  Takuji Okahisa ,  Shunsuke Fujita ,  Naoki Matsumoto ,  Hideyuki Ijiri ,  Fumitaka Sato ,  Kensaku Motoki ,  Seiji Nakahata ,  Koji Uematsu ,  Ryu Hirota

IPC分类号： H01L21/00

CPC分类号： H01L21/02617 ,  C23C16/303 ,  C23C16/4405 ,  C23C16/4488 ,  C30B23/02 ,  C30B25/02 ,  C30B29/403

摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

公开(公告)号：US5091982A

公开(公告)日：1992-02-25

申请号：US550569

申请日：1990-07-10

申请人： Kiyoshi Yokomori ,  Shunsuke Fujita ,  Shigeyoshi Misawa

发明人： Kiyoshi Yokomori ,  Shunsuke Fujita ,  Shigeyoshi Misawa

IPC分类号： G02B6/12 ,  G02B6/42 ,  G11B7/12 ,  G11B7/13

CPC分类号： G02B6/12004 ,  G02B6/42 ,  G11B7/1245 ,  G11B7/13

摘要： A waveguide type optical detection apparatus which is provided on an optical integrated circuit that has a waveguide for transmitting a light from point to point through the waveguide, one or more sets of two adjacent photodetectors provided on the waveguide, and one or more light-insensitive areas existing between the two adjacent photodetectors of each set. The waveguide type optical detection apparatus includes a waveguide focusing part and one or more reflection parts, the waveguide focusing part being provided on the waveguide for allowing a light beam passing through the waveguide to be focused on each of the two adjacent photodetectors of each set, and the reflection parts provided adjacent to each of the light-insensitive areas for reflecting each of light beams sent from the waveguide focusing means forward each of the two adjacent photodetectors of each set so that the light beams are received by the photodetectors. The waveguide type optical detection apparatus can be applied to a pickup for an optical disk and a photodetector array for an optical spectrum analyzer.

摘要翻译： 一种波导型光学检测装置，其设置在光集成电路上，该光集成电路具有用于从点到点通过波导传输光的波导，设置在波导上的一组或多组相邻的两个光电检测器，以及一个或多个光不敏感 存在于每组的两个相邻光电检测器之间的区域。 波导型光检测装置包括波导聚焦部分和一个或多个反射部分，波导聚焦部分设置在波导上，用于允许通过波导的光束聚焦在每组的两个相邻光电检测器中的每一个上， 以及与每个不透光区域相邻设置的反射部分，用于将从波导聚焦装置发送的每个光束反射到每组的两个相邻光电检测器中的每一个，使得光束被光电检测器接收。 波导型光学检测装置可以应用于光盘的拾取器和用于光谱分析器的光电检测器阵列。

公开(公告)号：US20130049575A1

公开(公告)日：2013-02-28

申请号：US13696240

申请日：2011-06-29

申请人： Shunsuke Fujita ,  Ryota Suzuki ,  Tadahito Furuyama

发明人： Shunsuke Fujita ,  Ryota Suzuki ,  Tadahito Furuyama

IPC分类号： B32B17/06 ,  B32B37/24 ,  B32B33/00 ,  H05B33/14 ,  B32B18/00

CPC分类号： C09K11/02 ,  C03C8/08 ,  C03C8/14 ,  C04B35/44 ,  C04B35/645 ,  C04B37/042 ,  C04B41/009 ,  C04B41/5022 ,  C04B41/86 ,  C04B2111/807 ,  C04B2235/3225 ,  C04B2235/3229 ,  C04B2235/3418 ,  C04B2235/441 ,  C04B2235/5436 ,  C04B2235/6567 ,  C04B2235/658 ,  C04B2235/764 ,  C04B2235/81 ,  C04B2235/9646 ,  C04B2237/343 ,  C04B2237/58 ,  C04B2237/70 ,  C04B2237/704 ,  C09K11/7774 ,  H01L33/502 ,  Y10T428/24355 ,  C04B41/4539 ,  C04B41/5027 ,  C04B41/5053

摘要： Provided is a phosphor composite member having excellent thermal resistance, high color rendition, controllability of various chromaticities from a daylight color to a light bulb color, and high luminescence intensity. A phosphor composite member in which a sintered inorganic powder body layer containing a SnO—P2O5-based glass and an inorganic phosphor powder is formed on a surface of a ceramic base material, wherein upon irradiation with an excitation light, the ceramic base material and the sintered inorganic powder body layer emit different fluorescences having different wavelengths.

摘要翻译： 提供了具有优异的耐热性，高显色性，从日光颜色到灯泡颜色的各种色度的可控性以及高发光强度的荧光体复合部件。 在陶瓷基材的表面上形成含有SnO-P 2 O 5系玻璃和无机荧光体粉末的烧结无机粉体层的荧光体复合部件，其中，在用激发光照射时，陶瓷基材和 烧结无机粉末体层发射具有不同波长的不同荧光。

公开(公告)号：US20110006329A1

公开(公告)日：2011-01-13

申请号：US12866922

申请日：2009-01-28

申请人： Shunsuke Fujita ,  Yoshio Umayahara ,  Akihiko Sakamoto

发明人： Shunsuke Fujita ,  Yoshio Umayahara ,  Akihiko Sakamoto

IPC分类号： H01L33/50 ,  B29D11/00 ,  C09K19/02 ,  B32B3/30 ,  B32B17/10 ,  G02B1/00

CPC分类号： C03C12/00 ,  C03B19/06 ,  C03B32/005 ,  C03B2201/70 ,  C03C3/19 ,  C03C14/006 ,  C03C2214/16 ,  H01L33/501 ,  H01L33/505 ,  H01L2933/0041 ,  Y10T428/1036 ,  Y10T428/24479 ,  Y10T428/2457 ,  Y10T428/24612

摘要： To provide a wavelength conversion member having good surface accuracy and dimensional accuracy even when processed in various shapes, and a method for manufacturing the same. A method for manufacturing a wavelength conversion member, including the steps of: subjecting a preform made of a powder mixture containing a glass powder and an inorganic phosphor powder to heat treatment, thereby obtaining a sintered powder product; and re-press molding the sintered powder product with a die.

摘要翻译： 为了提供即使在各种形状的处理时也具有良好的表面精度和尺寸精度的波长转换构件及其制造方法。 一种制造波长转换部件的方法，包括以下步骤：对由玻璃粉末和无机荧光体粉末组成的粉末混合物制成的预制件进行热处理，从而获得烧结粉末产品; 并用模具再次压制烧结粉末产品。