公开(公告)号：US20090068822A1

公开(公告)日：2009-03-12

申请号：US12177490

申请日：2008-07-22

申请人： Yong-Jin KIM ,  Ji-Hoon KIM ,  Dong-Kun LEE ,  Doo-Soo KIM ,  Ho-Jun LEE

发明人： Yong-Jin KIM ,  Ji-Hoon KIM ,  Dong-Kun LEE ,  Doo-Soo KIM ,  Ho-Jun LEE

IPC分类号： H01L21/20 ,  C30B25/00

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/18

摘要： Provided is a method for preparing a substrate for growing gallium nitride and a gallium nitride substrate. The method includes performing thermal cleaning on a surface of a silicon substrate, forming a silicon nitride (Si3N4) micro-mask on the surface of the silicon substrate in an in situ manner, and growing a gallium nitride layer through epitaxial lateral overgrowth (ELO) using an opening in the micro-mask. According to the method, by improving the typical ELO, it is possible to simplify the method for preparing the substrate for growing gallium nitride and the gallium nitride substrate and reduce process cost.

摘要翻译： 提供一种制备用于生长氮化镓和氮化镓衬底的衬底的方法。 该方法包括在硅衬底的表面上进行热清洗，以原位方式在硅衬底的表面上形成氮化硅（Si 3 N 4）微掩模，并通过外延横向过度生长（ELO）生长氮化镓层， 在微面罩中使用开口。 根据该方法，通过改善典型的ELO，可以简化制备用于生长氮化镓和氮化镓衬底的衬底的方法，并降低工艺成本。

公开(公告)号：US20090111250A1

公开(公告)日：2009-04-30

申请号：US12177917

申请日：2008-07-23

申请人： Ho-Jun LEE ,  Yong-Jin KIM ,  Dong-Kun LEE ,  Doo-Soo KIM ,  Ji-Hoon KIM

发明人： Ho-Jun LEE ,  Yong-Jin KIM ,  Dong-Kun LEE ,  Doo-Soo KIM ,  Ji-Hoon KIM

IPC分类号： H01L21/20

CPC分类号： H01L21/0254 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02664

摘要： Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls on a substrate, growing a compound semiconductor epitaxial layer on the substrate coated with the spherical balls while allowing voids to be formed under the spherical balls, and cooling the substrate on which the compound semiconductor epitaxial layer is grown so that the substrate and the compound semiconductor epitaxial layer are self-separated along the voids. The spherical ball treatment can reduce dislocation generations. In addition, because the substrate and the compound semiconductor epitaxial layer are separated through the self-separation, there is no need for laser lift-off process.

摘要翻译： 提供了一种制备化合物半导体衬底的方法。 该方法包括在基板上涂覆多个球形球，在涂覆有球形球的基材上生长化合物半导体外延层，同时允许在球形球下方形成空隙，并且冷却其上化合物半导体外延层为 生长，使得衬底和化合物半导体外延层沿着空隙自我分离。 球形球处理可以减少错位几代。 此外，由于基板和化合物半导体外延层通过自分离分离，因此不需要激光剥离处理。

公开(公告)号：US20100330784A1

公开(公告)日：2010-12-30

申请号：US12878225

申请日：2010-09-09

申请人： Ho-Jun LEE ,  Yong-Jin KIM ,  Dong-Kun LEE ,  Doo-Soo KIM ,  Ji-Hoon KIM

发明人： Ho-Jun LEE ,  Yong-Jin KIM ,  Dong-Kun LEE ,  Doo-Soo KIM ,  Ji-Hoon KIM

IPC分类号： H01L21/20

CPC分类号： H01L21/0254 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02664

摘要： Provided is a method for preparing a compound semiconductor substrate. The method includes coating a plurality of spherical balls on a substrate, growing a compound semiconductor epitaxial layer on the substrate coated with the spherical balls while allowing voids to be formed under the spherical balls, and cooling the substrate on which the compound semiconductor epitaxial layer is grown so that the substrate and the compound semiconductor epitaxial layer are self-separated along the voids. The spherical ball treatment can reduce dislocation generations. In addition, because the substrate and the compound semiconductor epitaxial layer are separated through the self-separation, there is no need for laser lift-off process.

摘要翻译： 提供了一种制备化合物半导体衬底的方法。 该方法包括在基板上涂覆多个球形球，在涂覆有球形球的基材上生长化合物半导体外延层，同时允许在球形球下方形成空隙，并且冷却其上化合物半导体外延层为 生长，使得衬底和化合物半导体外延层沿着空隙自我分离。 球形球处理可以减少错位几代。 此外，由于基板和化合物半导体外延层通过自分离分离，因此不需要激光剥离处理。