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19 条记录 (耗时 0.025 秒)

    Perpendicular magnetic recording medium having an interlayer of a non-magnetic nickel alloy
    3.
    发明授权
    Perpendicular magnetic recording medium having an interlayer of a non-magnetic nickel alloy 有权
    具有非磁性镍合金中间层的垂直磁记录介质

    公开(公告)号：US07632580B2

    公开(公告)日：2009-12-15

    申请号：US11146348

    申请日：2005-06-06

    申请人： Yoshihiro Ikeda ,  Mary F. Minardi ,  Kentaro Takano ,  Qi-Fan Xiao

    发明人： Yoshihiro Ikeda ,  Mary F. Minardi ,  Kentaro Takano ,  Qi-Fan Xiao

    IPC分类号： G11B5/66

    CPC分类号： G11B5/667 ,  G11B5/7325

    摘要： Perpendicular magnetic recording media and methods of fabricating perpendicular magnetic recording media are described. The perpendicular magnetic recording medium of one embodiment includes an interlayer, an underlayer, and a perpendicular magnetic recording layer. The interlayer is comprised of a Ni-alloy having the characteristics of being nonmagnetic and having an FCC structure. The alloying element for the Ni-alloy may comprise one of V or Cr, or may comprise one of V, Cr, or W. The concentration of the alloying element is set such that the concentration of the alloying element is high enough to make the Ni-alloy non-magnetic, while low enough to maintain an FCC structure for the Ni-alloy.

    摘要翻译： 描述垂直磁记录介质和制造垂直磁记录介质的方法。 一个实施例的垂直磁记录介质包括中间层，底层和垂直磁记录层。 中间层由具有非磁性并具有FCC结构的特性的Ni合金构成。 用于Ni合金的合金元素可以包括V或Cr中的一种，或者可以包括V，Cr或W中的一种。合金元素的浓度被设定为使合金元素的浓度高到足以使 Ni合金非磁性，同时足够低以维持Ni合金的FCC结构。

    Thin film media with a dual seed layer of RuAI/NiAIB
    6.
    发明授权
    Thin film media with a dual seed layer of RuAI/NiAIB 有权
    具有RuAI / NiAIB双种子层的薄膜介质

    公开(公告)号：US06863993B1

    公开(公告)日：2005-03-08

    申请号：US10676735

    申请日：2003-09-30

    申请人： Mary Frances Doerner ,  Kai Tang ,  Qi-Fan Xiao

    发明人： Mary Frances Doerner ,  Kai Tang ,  Qi-Fan Xiao

    IPC分类号： G11B5/738 ,  G11B5/64 ,  G11B5/65 ,  G11B5/66 ,  G11B5/73 ,  H01F10/26 ,  H01F10/32 ,  G11B5/70 ,  H01J1/00

    CPC分类号： B82Y25/00 ,  G11B5/656 ,  G11B5/66 ,  G11B5/732 ,  H01F10/26 ,  H01F10/324 ,  Y10T428/12465 ,  Y10T428/12861

    摘要： A thin film structure for a magnetic thin film recording medium including a dual seed layer of RuAl/NiAlB is disclosed. The use of the RuAl/NiAlB structure provides reduced grain size, an increased Mrt orientation ratio (OR), increased SNR and lower PW50 at higher amplitude. The RuAl and NiAlB seed layers each have a B2 crystallographic structure. The RuAl/NiAlB dual seed layer can be used to obtain an underlayer with a preferred in-plane orientation of (200) and a cobalt alloy magnetic film with the preferred in-plane orientation of (11{overscore ( )}20).

    摘要翻译： 公开了一种用于包括RuAl / NiAlB的双种子层的磁性薄膜记录介质的薄膜结构。 使用RuAl / NiAlB结构提供了降低的晶粒尺寸，增加的Mrt取向比（OR），增加的SNR和在较高幅度下降低PW50。 RuAl和NiAlB种子层各自具有B2晶体结构。 可以使用RuAl / NiAlB双种子层来获得具有（200）的优选面内取向的底层和具有优选的面内取向的（11（超芯）（20））的钴合金磁性膜。

    Method for minimizing magnetically dead interfacial layer during COC process
    7.
    发明授权
    Method for minimizing magnetically dead interfacial layer during COC process 有权
    在COC过程中磁化死层界面最小化的方法

    公开(公告)号：US08815060B2

    公开(公告)日：2014-08-26

    申请号：US10930377

    申请日：2004-08-30

    申请人： Eric Wayne Flint ,  Ning Shi ,  Qi-Fan Xiao

    发明人： Eric Wayne Flint ,  Ning Shi ,  Qi-Fan Xiao

    IPC分类号： C23C14/00 ,  C23C14/32 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C23C14/02

    CPC分类号： G11B5/3163 ,  G11B5/3106

    摘要： A method for applying a protective layer to an electronic device such as the ABS of a slider, magnetic head, etc. for reducing paramagnetic deadlayer thickness includes selecting an etching angle for minimizing formation of a paramagnetic deadlayer at an interface of an electronic device and an adhesive layer subsequently formed on the electronic device, etching a surface of an electronic device at the selected angle, the selected angle being less than about 75 degrees from an imaginary line extending perpendicular to the surface, forming an adhesive layer on the etched surface of the electronic device, and forming a protective layer on the adhesive layer. A magnetic head formed by the process is also disclosed.

    摘要翻译： 将保护层施加到诸如滑块，磁头等的ABS的用于降低顺磁性层的厚度的电子设备的方法包括选择蚀刻角度以最小化在电子设备的界面处形成顺磁性残留层 随后形成在电子设备上的粘合剂层，以选定的角度蚀刻电子器件的表面，所选择的角度距离垂直于该表面延伸的假想线小于约75度，在该蚀刻表面上形成粘合剂层 电子器件，并在粘合剂层上形成保护层。 还公开了通过该方法形成的磁头。

    Polychannel multiple-total-external reflection neutron radiography
    10.
    发明授权
    Polychannel multiple-total-external reflection neutron radiography 失效
    多通道多全反射中子射线成像

    公开(公告)号：US5553105A

    公开(公告)日：1996-09-03

    申请号：US332410

    申请日：1994-10-31

    申请人： Qi-Fan Xiao

    发明人： Qi-Fan Xiao

    IPC分类号： G01N23/05

    CPC分类号： G01N23/05

    摘要： A method of generating a neutron-radiographic image of a sample by passing a generated neutron beam through a multiple-channel, multiple-total-external reflection neutron bender/filter manipulator which includes at least one multiple-channel element, directing an output beam from the neutron bender/filter manipulator onto the sample; passing a neutron beam exiting the sample though a multiple-channel, multiple-total-external reflection neutron scatter-rejection manipulator which includes at least one multiple-channel element, the multiple-channel element being comprised of a material containing a nuclear isotope which is highly absorptive to neutrons with energies less than approximately 10,000 eV; and detecting a beam which exits the scatter-rejection manipulator.

    摘要翻译： 通过使产生的中子束通过多通道多总体外部反射中子弯曲/滤波器操纵器来产生样品的中子射线照相图像的方法，所述多通道多重全反射中子弯曲/滤波器操纵器包括至少一个多通道元件，将输出光束从 中子弯曲/过滤器操纵器到样品上; 使穿过样品的中子束通过包含至少一个多通道元件的多通道多全反射中子散射 - 斥力操纵器，所述多通道元件由含有核同位素的材料组成，所述核同位素是 高度吸收能量小于约10,000 eV的中子; 以及检测离开该分散拒斥操纵器的光束。