公开(公告)号：US20060049754A1

公开(公告)日：2006-03-09

申请号：US11219747

申请日：2005-09-07

申请人： Hoi Kwok ,  Man Wong ,  Hua-Jun Peng ,  Shuang Xie

发明人： Hoi Kwok ,  Man Wong ,  Hua-Jun Peng ,  Shuang Xie

IPC分类号： H05B33/12

CPC分类号： H01L51/5088

摘要： An organic light emitting diode consisting of multiple organic layers, disposed between a transparent conducting anode and metallic cathode. The anode is provided with a metal fluoride layer to enhance the overall performance of the device, including higher power efficiency, lower voltage threshold and improved device operation stability.

摘要翻译： 由多个有机层组成的有机发光二极管，设置在透明导电阳极和金属阴极之间。 阳极设置有金属氟化物层，以提高器件的整体性能，包括更高的功率效率，更低的电压阈值和更好的器件操作稳定性。

公开(公告)号：US07402947B2

公开(公告)日：2008-07-22

申请号：US11219747

申请日：2005-09-07

申请人： Hoi Sing Kwok ,  Man Wong ,  Hua-Jun Peng ,  Shuang Xie

发明人： Hoi Sing Kwok ,  Man Wong ,  Hua-Jun Peng ,  Shuang Xie

IPC分类号： H01J1/62

CPC分类号： H01L51/5088

摘要： An organic light emitting diode consisting of multiple organic layers, disposed between a transparent conducting anode and metallic cathode. The anode is provided with a metal fluoride layer to enhance the overall performance of the device, including higher power efficiency, lower voltage threshold and improved device operation stability.

摘要翻译： 由多个有机层组成的有机发光二极管，设置在透明导电阳极和金属阴极之间。 阳极设置有金属氟化物层，以提高器件的整体性能，包括更高的功率效率，更低的电压阈值和更好的器件操作稳定性。

公开(公告)号：US07829905B2

公开(公告)日：2010-11-09

申请号：US11516632

申请日：2006-09-07

申请人： Yan Huang ,  Kuo-An Chiu ,  Hua-Jun Peng ,  Jian Feng ,  Hung-Shen Chu

发明人： Yan Huang ,  Kuo-An Chiu ,  Hua-Jun Peng ,  Jian Feng ,  Hung-Shen Chu

IPC分类号： H01L33/46

CPC分类号： H01L33/44 ,  H01L33/405 ,  H01L2933/0083

摘要： A semiconductor light emitting device for emission of light having a predetermined bandwidth in a primary direction of emission includes a light generating region for the generation of light; and a 1-dimensional photonic crystal structure having a photonic bandgap covering at least a segment of said bandwidth. The 1-dimensional photonic crystal structure is located such that upon incident of light from the light generating region, light having a wavelength within the bandgap of the 1-dimensional photonic crystal structure is reflected in the primary direction of emission.

摘要翻译： 用于发射在主发射方向上具有预定带宽的光的半导体发光器件包括用于产生光的光产生区域; 以及具有覆盖所述带宽的至少一段的光子带隙的一维光子晶体结构。 一维光子晶体结构被定位成使得当来自发光区域的光入射时，具有在一维光子晶体结构的带隙内的波长的光在主要发射方向上被反射。

公开(公告)号：US20080061304A1

公开(公告)日：2008-03-13

申请号：US11516632

申请日：2006-09-07

申请人： Yan Huang ,  Kuo-An Chiu ,  Hua-Jun Peng ,  Jian Feng ,  Hung-Shen Chu

发明人： Yan Huang ,  Kuo-An Chiu ,  Hua-Jun Peng ,  Jian Feng ,  Hung-Shen Chu

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L33/405 ,  H01L2933/0083

摘要： A semiconductor light emitting device for emission of light having a predetermined bandwidth in a primary direction of emission includes a light generating region for the generation of light; and a 1-dimensional photonic crystal structure having a photonic bandgap covering at least a segment of said bandwidth. The 1-dimensional photonic crystal structure is located such that upon incident of light from the light generating region, light having a wavelength within the bandgap of the 1-dimensional photonic crystal structure is reflected in the primary direction of emission.

摘要翻译： 用于发射在主发射方向上具有预定带宽的光的半导体发光器件包括用于产生光的光产生区域; 以及具有覆盖所述带宽的至少一段的光子带隙的一维光子晶体结构。 一维光子晶体结构被定位成使得当来自发光区域的光入射时，具有在一维光子晶体结构的带隙内的波长的光在主要发射方向上被反射。