公开(公告)号：US20140317470A1

公开(公告)日：2014-10-23

申请号：US14225686

申请日：2014-03-26

申请人： Hoi-ju CHUNG ,  Chul-sung PARK ,  Tae-young OH ,  Jang-woo RYU ,  Chan-yong LEE ,  Tae-seong JANG ,  Gong-heum HAN

发明人： Hoi-ju CHUNG ,  Chul-sung PARK ,  Tae-young OH ,  Jang-woo RYU ,  Chan-yong LEE ,  Tae-seong JANG ,  Gong-heum HAN

IPC分类号： G06F11/10

CPC分类号： G06F11/1048 ,  G06F11/1008 ,  G06F11/1068 ,  G06F11/1072 ,  G06F11/1076

摘要： A method of operating a memory device includes: generating an internal read command in response to a received masked write command, the internal read command being generated one of (i) during a write latency associated with the received masked write command, (ii) after receipt of a first bit of masked write data among a plurality of bits of masked write data, and (iii) in synchronization with a rising or falling edge of a clock signal received with an address signal corresponding to the masked write command; reading, in response to the internal read command, a plurality of bits of data stored in a plurality of memory cells, the plurality of memory cells corresponding to the address signal; and storing, in response to an internal write command, the plurality of bits of masked write data in the plurality of memory cells.

摘要翻译： 一种操作存储器件的方法包括：响应于接收到的屏蔽写入命令产生内部读取命令，内部读取命令被生成（i）在与所接收的被屏蔽写入命令相关联的写入延迟期间，（ii）之后 在多个屏蔽写入数据位之间接收第一位掩蔽写入数据，以及（iii）与用与掩蔽写入命令对应的地址信号接收的时钟信号的上升沿或下降沿同步; 响应于所述内部读取命令，读取存储在多个存储器单元中的多个位数据，所述多个存储器单元对应于所述地址信号; 以及响应于内部写入命令，在所述多个存储器单元中存储所述多个掩码写入数据位。