公开(公告)号：US06685800B2

公开(公告)日：2004-02-03

申请号：US10003195

申请日：2001-11-14

申请人： Hong Seub Kim ,  Gi Chung Kwon ,  Sun Seok Han ,  Choong Won Lee ,  Sung Weon Lee ,  Hong Sik Byun

发明人： Hong Seub Kim ,  Gi Chung Kwon ,  Sun Seok Han ,  Choong Won Lee ,  Sung Weon Lee ,  Hong Sik Byun

IPC分类号： C23C1600

CPC分类号： H01J37/32522 ,  H01J37/321

摘要： Disclosed is an apparatus for generating ICP, which has a heater having a hot wire as a heating source for heating elements in a chamber and inner wall of the chamber and also efficiently transfers heat of the heater through a heat transferring gas to the elements in the chamber and the inner wall of the chamber. According to the present invention, the elements in the chamber and the inner wall of the chamber can be heated up to a temperature of about 200° C., thereby reducing the adhesion of the by-product served as the source generating the undesirable particles. In addition, since the hot wire having a longer life span than the halogen lamp is used as heat radiating means, the life span of the apparatus is also increased.

摘要翻译： 公开了一种用于产生ICP的装置，其具有加热器，该加热器具有热丝作为加热室，用于加热腔室中的元件和腔室的内壁，并且还通过传热气体将加热器的热量有效地传递到 室和室的内壁。 根据本发明，室中的元件和室的内壁可被加热至约200℃的温度，从而降低了作为产生不期望的颗粒的源的副产物的粘附。 此外，由于使用寿命比卤素灯长的热丝作为散热装置，因此装置的使用寿命也增加。

公开(公告)号：US06653988B2

公开(公告)日：2003-11-25

申请号：US10185676

申请日：2002-06-27

申请人： Gi Chung Kwon ,  Hong Sik Byun ,  Sung Weon Lee ,  Hong Seub Kim ,  Sun Seok Han ,  Bu Jin Ko ,  Joung Sik Kim

发明人： Gi Chung Kwon ,  Hong Sik Byun ,  Sung Weon Lee ,  Hong Seub Kim ,  Sun Seok Han ,  Bu Jin Ko ,  Joung Sik Kim

IPC分类号： H01Q136

CPC分类号： H01Q21/24 ,  H01Q1/38 ,  H01Q9/27 ,  H01Q21/20

摘要： Disclosed is a parallel resonance antenna comprising: a whirl antenna having a plurality of antenna units installed two-dimensionally and radially around a central point, each of the antenna units having a ground point at a predetermined position thereof, portions outside the ground points respectively being bent in a same direction, the antenna units having a same size and direction, angles between the antenna units at the central point being all the same; a central conductive line connected to the central point to be normal to the whirl antenna, for being supplied with an RF power; a metal plate installed over and apart from the whirl antenna, the metal plate being connected with end portions of the antenna units, and having a penetration hole through which the central conductive line passes without contacting with the metal plate; and a variable resonance capacitor installed in series between the central conductive line and the metal plate. According to a parallel resonance antenna, the geometrical structure enables to obtain a uniform plasma. Since the antenna has a small inductance, impedance matching is easy even at the VHF band. Also, at the resonance point, since the potential of the inner portions (Z1, Z2, Z3 and Z4) of the ground points of the antenna units is low, it becomes possible to decrease a non-desired sputtering phenomenon.

公开(公告)号：US06683274B1

公开(公告)日：2004-01-27

申请号：US10295954

申请日：2002-11-18

申请人： Gi Chung Kwon ,  Soo Sik Yoon ,  Hong Sik Byun

发明人： Gi Chung Kwon ,  Soo Sik Yoon ,  Hong Sik Byun

IPC分类号： B23K1000

CPC分类号： H01L21/67103 ,  C23C16/4586 ,  C23C16/505 ,  H01J37/32082

摘要： Disclosed is a wafer susceptor which includes: a ceramic body; a RF electrode mounted within the ceramic body; a heater mounted within the ceramic body and spaced apart from the RF electrode by a predetermined distance to be disposed below the RF electrode; and an RF shield of a metal material, the RF shield being electrically grounded and mounted within the ceramic body, the RF shield being disposed between the RF electrode and the heater without being in contact with either the heater or the RF electrode. In case where an RF power is applied to the RF electrode, it is possible to minimize an influence of an RF noise on the heater 24. Accordingly, since the RF power can be applied to the susceptor while heating the susceptor at a high temperature, it is possible to deposit a high-density thin film and also control properties of the thin film such as stress and step coverage. Further, the invention may take the stabilization of the power system.

摘要翻译： 公开了一种晶片基座，其包括：陶瓷体; 安装在陶瓷体内的RF电极; 安装在陶瓷体内并与RF电极隔开预定距离的加热器，以设置在RF电极下方; 以及金属材料的RF屏蔽层，RF屏蔽层电接地并安装在陶瓷体内，RF屏蔽件设置在RF电极和加热器之间，而不与加热器或RF电极接触。 在向RF电极施加RF功率的情况下，可以使RF噪声对加热器24的影响最小化。因此，由于可以在高温下加热基座的同时向基座施加RF功率， 可以沉积高密度薄膜，并且还可以控制薄膜的性能，例如应力和台阶覆盖。 此外，本发明可以实现电力系统的稳定。