利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

183 条记录 (耗时 0.023 秒)

    Diode assisted switching spin-transfer torque memory unit
    4.
    发明授权
    Diode assisted switching spin-transfer torque memory unit 有权
    二极管辅助开关自旋转移转矩存储单元

    公开(公告)号：US07944742B2

    公开(公告)日：2011-05-17

    申请号：US12861932

    申请日：2010-08-24

    申请人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu ,  Xiaobin Wang

    发明人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu ,  Xiaobin Wang

    IPC分类号： G11C11/14

    CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659

    摘要： A memory array includes a cross-point array of bit and source lines. A memory is disposed at cross-points of the cross-point array. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.

    摘要翻译： 存储器阵列包括位线和源极线的交叉点阵列。 存储器设置在交叉点阵列的交叉点处。 存储单元包括电耦合到位线和源极线的磁性隧道结数据单元。 磁隧道结数据单元被配置为通过使极化写入电流通过磁性隧道结数据单元在高电阻状态和低电阻状态之间切换。 晶体管电连接在磁性隧道结数据单元与位线或源极线之间，二极管与磁性隧道结数据单元处于热或电接触以辅助电阻状态切换。

    Diode assisted switching spin-transfer torque memory unit
    7.
    发明授权
    Diode assisted switching spin-transfer torque memory unit 有权
    二极管辅助开关自旋转移转矩存储单元

    公开(公告)号：US08482971B2

    公开(公告)日：2013-07-09

    申请号：US13472867

    申请日：2012-05-16

    申请人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu ,  Xiaobin Wang

    发明人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu ,  Xiaobin Wang

    IPC分类号： G11C11/14

    CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659

    摘要： A memory array includes a cross-point array of bit and source lines. A memory is disposed at cross-points of the cross-point array. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.

    摘要翻译： 存储器阵列包括位线和源极线的交叉点阵列。 存储器设置在交叉点阵列的交叉点处。 存储单元包括电耦合到位线和源极线的磁性隧道结数据单元。 磁隧道结数据单元被配置为通过使极化写入电流通过磁性隧道结数据单元在高电阻状态和低电阻状态之间切换。 晶体管电连接在磁性隧道结数据单元与位线或源极线之间，二极管与磁性隧道结数据单元处于热或电接触以辅助电阻状态切换。

    Predictive Thermal Preconditioning and Timing Control for Non-Volatile Memory Cells
    8.
    发明申请
    Predictive Thermal Preconditioning and Timing Control for Non-Volatile Memory Cells 有权
    非易失性记忆体的预测热预处理和时序控制

    公开(公告)号：US20120147665A1

    公开(公告)日：2012-06-14

    申请号：US13400515

    申请日：2012-02-20

    申请人： Yiran Chen ,  Hai Li ,  Harry Hongyue Liu ,  Dimitar V. Dimitrov ,  Alan Xuguang Wang ,  Xiaobin Wang

    发明人： Yiran Chen ,  Hai Li ,  Harry Hongyue Liu ,  Dimitar V. Dimitrov ,  Alan Xuguang Wang ,  Xiaobin Wang

    IPC分类号： G11C11/16 ,  G11C7/00

    CPC分类号： G11C11/1675 ,  G11C11/1659

    摘要： Method and apparatus for using thermal preconditioning to write data to a non-volatile memory cell. In accordance with some embodiments, a semiconductor memory has an array of non-volatile memory cells, and a control circuit which stores a first write command from a host to write data to said array. A write circuit flows a write current through an unconditioned first selected cell having a first block address associated with the first write command to write the first selected cell to a selected data state, and concurrently passes a thermal preconditioning current through a second selected cell having a second block address associated with the first block address. The write circuit further passes a thermal preconditioning current through a third selected cell having a third block address associated with the second block address in response to receipt by the control circuit of a second write command from the host associated with the second block address.

    摘要翻译： 使用热预处理将数据写入非易失性存储单元的方法和装置。 根据一些实施例，半导体存储器具有非易失性存储器单元的阵列，以及存储来自主机的第一写命令以将数据写入所述阵列的控制电路。 写入电路通过具有与第一写入命令相关联的第一块地址的无条件的第一选定单元流动写入电流，以将第一选定单元写入所选择的数据状态，并且同时通过热预处理电流通过具有 与第一块地址相关联的第二块地址。 响应于控制电路接收到与第二块地址相关联的主机的第二写入命令，写入电路进一步传递热预处理电流通过具有与第二块地址相关联的第三块地址的第三选定单元。

    Diode assisted switching spin-transfer torque memory unit
    9.
    发明授权
    Diode assisted switching spin-transfer torque memory unit 有权
    二极管辅助开关自旋转移转矩存储单元

    公开(公告)号：US08199569B2

    公开(公告)日：2012-06-12

    申请号：US13087517

    申请日：2011-04-15

    申请人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu ,  Xiaobin Wang

    发明人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu ,  Xiaobin Wang

    IPC分类号： G11C11/14

    CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659

    摘要： A memory array includes a cross-point array of bit and source lines. A memory is disposed at cross-points of the cross-point array. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.

    摘要翻译： 存储器阵列包括位线和源极线的交叉点阵列。 存储器设置在交叉点阵列的交叉点处。 存储单元包括电耦合到位线和源极线的磁性隧道结数据单元。 磁隧道结数据单元被配置为通过使极化写入电流通过磁性隧道结数据单元在高电阻状态和低电阻状态之间切换。 晶体管电连接在磁性隧道结数据单元与位线或源极线之间，二极管与磁性隧道结数据单元处于热或电接触以辅助电阻状态切换。

    DIODE ASSISTED SWITCHING SPIN-TRANSFER TORQUE MEMORY UNIT
    10.
    发明申请
    DIODE ASSISTED SWITCHING SPIN-TRANSFER TORQUE MEMORY UNIT 有权
    二极管辅助开关转子转矩记忆单元

    公开(公告)号：US20110194334A1

    公开(公告)日：2011-08-11

    申请号：US13087517

    申请日：2011-04-15

    申请人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu ,  Xiaobin Wang

    发明人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu ,  Xiaobin Wang

    IPC分类号： G11C11/36

    CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659

    摘要： A memory array includes a cross-point array of bit and source lines. A memory is disposed at cross-points of the cross-point array. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.

    摘要翻译： 存储器阵列包括位线和源极线的交叉点阵列。 存储器设置在交叉点阵列的交叉点处。 存储单元包括电耦合到位线和源极线的磁性隧道结数据单元。 磁隧道结数据单元被配置为通过使极化写入电流通过磁性隧道结数据单元在高电阻状态和低电阻状态之间切换。 晶体管电连接在磁性隧道结数据单元与位线或源极线之间，二极管与磁性隧道结数据单元处于热或电接触以辅助电阻状态切换。