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16 条记录 (耗时 0.046 秒)

    Method for concurrently producing different hydrofluoro carbons
    1.
    发明授权
    Method for concurrently producing different hydrofluoro carbons 失效
    同时生产不同氢氟碳的方法

    公开(公告)号：US5959166A

    公开(公告)日：1999-09-28

    申请号：US966093

    申请日：1997-11-07

    申请人： Hoon Sik Kim ,  Moon Jo Chung ,  Kun You Park ,  Young Soo Kwon

    发明人： Hoon Sik Kim ,  Moon Jo Chung ,  Kun You Park ,  Young Soo Kwon

    IPC分类号： B01J23/26 ,  B01J27/125 ,  B01J27/132 ,  B01J27/138 ,  C07B61/00 ,  C07C17/20 ,  C07C17/21 ,  C07C19/08 ,  C07C19/10 ,  C07C17/08

    CPC分类号： C07C17/206 ,  C07C17/21 ,  Y02P20/582

    摘要： A method for concurrently producing different hydrofluoro carbons, comprising the reaction of halocarbon or hydrohalocarbon with hydrogen fluoride in a reaction system consisting of a series of at least two discrete reactors, in the presence of catalysts, said reactors each being provided with different reactant materials and differing in reaction conditions including the catalysts and/or reaction temperature, thereby flexibly controlling their production rates in accordance with fluctuations in their demand, and eliminating the risk of constructing large scale plants responsible for individual hydrofluorocarbons.

    摘要翻译： 一种同时生产不同氢氟碳的方法，包括在由一系列至少两个不连续的反应器组成的反应体系中，在催化剂存在下，卤代烃或氢卤化碳与氟化氢的反应，所述反应器各自具有不同的反应物料和 包括催化剂和/或反应温度在内的反应条件不同，从而根据其需求的波动灵活地控制其生产率，并消除构建负责单个氢氟碳化物的大型设备的风险。

    Process for manufacturing 1,1,1,2-tetrafluoroethane
    2.
    发明授权
    Process for manufacturing 1,1,1,2-tetrafluoroethane 失效
    制备1,1,1,2-四氟乙烷的方法

    公开(公告)号：US5841007A

    公开(公告)日：1998-11-24

    申请号：US630678

    申请日：1996-04-12

    申请人： Byoung Sung Ahn ,  Young Soo Kwon ,  Kun You Park ,  Moon Jo Chung

    发明人： Byoung Sung Ahn ,  Young Soo Kwon ,  Kun You Park ,  Moon Jo Chung

    IPC分类号： C07C17/20 ,  C07C17/21 ,  C07C19/08 ,  C07C17/00

    CPC分类号： C07C19/08 ,  C07C17/206 ,  C07C17/21

    摘要： The present invention relates to a process for manufacturing 1,1,1,2-tetrafluoroethane (HFC-134a) from trichloroethylene (TCE) and hydrogen fluoride (HF) by reacting the HCFC-133a with the HF to produce the HFC-134a and reacting the TCE with the HF to produce 1-choro-2,2,2-trifluoroethane (HCFC-133a), characterized by that a part of said HF is mixed with the mixture containing the HFC-134a and the remaining portion of said HF is fed with said TCE in portions to at least two sections of a reactor for producing said HCFC-133a. According the present process, the temperature change in the reactor for producing HCFC-133a is maintained within a narrow range over the whole reaction procedures, and the catalytic activity is well maintained. Further, the formation of by-products is considerably prevented and thus the productivity is remarkably enhanced.

    摘要翻译： 本发明涉及通过使HCFC-133a与HF反应生成HFC-134a，从三氯乙烯（TCE）和氟化氢（HF）制备1,1,1,2-四氟乙烷（HFC-134a） 使TCE与HF反应以产生1-氯-2,2,2-三氟乙烷（HCFC-133a），其特征在于，将所述HF的一部分与含有HFC-134a和所述HF的剩余部分的混合物混合 与所述TCE一起供给至用于生产所述HCFC-133a的反应器的至少两个部分。 根据本方法，生产HCFC-133a的反应器中的温度变化在整个反应过程中保持在窄范围内，并且催化活性得到很好的维持。 此外，可以显着地防止副产物的形成，从而显着提高生产率。

    Method for removing moisture from chlorodifluoro-methane
    4.
    发明授权
    Method for removing moisture from chlorodifluoro-methane 失效
    从一氯二氟甲烷中除去水分的方法

    公开(公告)号：US5723702A

    公开(公告)日：1998-03-03

    申请号：US615092

    申请日：1996-03-13

    申请人： Young Soo Kwon ,  Kun You Park ,  Sang-Deuk Lee ,  Honggon Kim

    发明人： Young Soo Kwon ,  Kun You Park ,  Sang-Deuk Lee ,  Honggon Kim

    IPC分类号： C07C17/38

    CPC分类号： C07C17/38

    摘要： There is a process for removing moisture from chlorodifluoromethane (CHClF.sub.2) containing moisture in excess in the preparation of chlorodifluoromethane comprising lowering the partial pressure of water in the chlorodifluoromethane gas by contacting the chlorodifluoromethane gas with an aqueous solution of calcium chloride of more than 5% by weight.

    摘要翻译： 在一氯二氟甲烷的制备中，有一个从含有二氧化碳的氯代二氟甲烷（CHClF 2）中除去水分的方法，包括通过使氯二氟甲烷气体与氯代二氟甲烷气体的氯化钙水溶液接触超过5％的氯化钙水溶液来降低氯二氟甲烷气体的分压 重量。

    Method of a simultaneous preparation of hexafluoropropylene and octafluorocyclobutane
    5.
    发明授权
    Method of a simultaneous preparation of hexafluoropropylene and octafluorocyclobutane 失效
    同时制备六氟丙烯和八氟环丁烷的方法

    公开(公告)号：US06710215B2

    公开(公告)日：2004-03-23

    申请号：US10218362

    申请日：2002-08-14

    申请人： Dong Ju Moon ,  Moon Jo Chung ,  Young Soo Kwon ,  Byoung Sung Ahn

    发明人： Dong Ju Moon ,  Moon Jo Chung ,  Young Soo Kwon ,  Byoung Sung Ahn

    IPC分类号： C07C1700

    CPC分类号： C07C23/06 ,  C07C17/269 ,  C07C17/281 ,  C07C21/185

    摘要： A method of simultaneous and selective prepararation of hexafluoropropylene and octafluorocyclebutane comprising the steps of: (a) thermally decomposing difluorochloromethane to obtain tetrafluoroethylene and then supplying the resulting tetrafluoroethylene into a fluidized bed reactor equipped with a distributor for supplying steam; and (b) supplying steam into a flow of tetrafluoroethylene supplied into the fluidized bed reactor, through a distributor for supplying steam at a certain molar ratio of tetrafluoroethylene/stream, and then performing dimerization of tetrafluoroethylene in the fluidized bed reactor under an atmospheric pressure.

    摘要翻译： 一种同时和选择性制备六氟丙烯和八氟环丁烷的方法，包括以下步骤：（a）热分解二氟氯甲烷以获得四氟乙烯，然后将所得的四氟乙烯供给到装有用于供应蒸汽的分配器的流化床反应器中; 和（b）通过用于以一定摩尔比的四氟乙烯/料流供给蒸汽的分配器供应蒸汽供入到流化床反应器中的四氟乙烯流中，然后在大气压下在流化床反应器中进行四氟乙烯的二聚。

    Preparation of hexafluoropropylene from the pyrolysis of trifluoromethane and tetrafluoroethylene
    6.
    发明授权
    Preparation of hexafluoropropylene from the pyrolysis of trifluoromethane and tetrafluoroethylene 失效
    从三氟甲烷和四氟乙烯的热解制备六氟丙烯

    公开(公告)号：US06403848B1

    公开(公告)日：2002-06-11

    申请号：US09820631

    申请日：2001-03-30

    申请人： Dong Ju Moon ,  Hong Gon Kim ,  Byoung Sung Ahn ,  Moon Jo Chung ,  Young Soo Kwon

    发明人： Dong Ju Moon ,  Hong Gon Kim ,  Byoung Sung Ahn ,  Moon Jo Chung ,  Young Soo Kwon

    IPC分类号： C07C1702

    CPC分类号： C07C17/269 ,  C07C21/18

    摘要： The present invention relates to a process for preparing hexafluoropropylene(CF3CF═CF2, HFP) from the pyrolysis of trifluoromethane(CHF3, R23) and tetrafluoroethylene(C2F4, TFE) and more particularly, to the process for preparing hexafluoropropylene from the pyrolysis of an admixture of R23 and TFE mixed in an appropriate molar ratio at below 900 which is lower than the conventional reaction temperature and longer residence time, after investigating the pyrolysis reaction of R23 and TFE by the computer simulation. The process for preparing HFP is performed by carefully controlling reaction temperature with heat balance resulted from an endothermic pyrolysis of R23 and an exothermic dimerization of TFE to prevent from carbon formation, recycling unreacted R23 and TFE in the product separated and purified from distillation column, adding fresh R23 additionally to keep an appropriate molar ratio of R23 and TFE, to improve a total yield of HFP and to minimize heat supply from outside.

    摘要翻译： 本发明涉及从三氟甲烷（CHF 3，R 23）和四氟乙烯（C 2 F 4，TFE）的热解制备六氟丙烯（CF 3 CF = CF 2，HFP）的方法，更具体地说，涉及从混合物的热解制备六氟丙烯的方法 通过计算机模拟研究R23和TFE的热解反应后，R23和TFE以适合的摩尔比混合在900以下，低于常规反应温度和较长的停留时间。 制备HFP的过程是通过仔细控制反应温度和由R23的吸热热解产生的热平衡和TFE的放热二聚反应来防止形成碳，循环未反应的R23和TFE，从蒸馏塔中分离和纯化，加入 新鲜的R23另外保持适当的R23和TFE的摩尔比，以提高HFP的总产率并最小化从外部的供热。

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    9.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20110034036A1

    公开(公告)日：2011-02-10

    申请号：US12845481

    申请日：2010-07-28

    申请人： Young Soo Kwon

    发明人： Young Soo Kwon

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02068 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02301 ,  H01L21/3185 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76849 ,  H01L21/76867

    摘要： Provided is a method of manufacturing a semiconductor device. In the method, after a thin liner is formed on a substrate on which a lower interconnection is formed, a silicon source is supplied to form a silicide layer under the liner by a reaction between the silicon source and the lower interconnection, and the silicide layer is nitrided and an etch stop layer is formed. Therefore, the lower interconnection is prevented from making contact with the silicon source, variations of the surface resistance of the lower interconnection can be prevented, and thus high-speed devices can be fabricated.

    摘要翻译： 提供一种制造半导体器件的方法。 在该方法中，在形成有下部布线的基板上形成薄衬垫之后，通过硅源和下部布线之间的反应，提供硅源以在衬垫下方形成硅化物层，并且硅化物层 被氮化并形成蚀刻停止层。 因此，防止下部互连与硅源接触，可以防止下部布线的表面电阻的变化，从而可以制造高速器件。

    Method of manufacturing semiconductor device
    10.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08367549B2

    公开(公告)日：2013-02-05

    申请号：US12845481

    申请日：2010-07-28

    申请人： Young Soo Kwon

    发明人： Young Soo Kwon

    IPC分类号： H01L21/44

    CPC分类号： H01L21/02068 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02301 ,  H01L21/3185 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76849 ,  H01L21/76867

    摘要： Provided is a method of manufacturing a semiconductor device. In the method, after a thin liner is formed on a substrate on which a lower interconnection is formed, a silicon source is supplied to form a silicide layer under the liner by a reaction between the silicon source and the lower interconnection, and the silicide layer is nitrided and an etch stop layer is formed. Therefore, the lower interconnection is prevented from making contact with the silicon source, variations of the surface resistance of the lower interconnection can be prevented, and thus high-speed devices can be fabricated.

    摘要翻译： 提供一种制造半导体器件的方法。 在该方法中，在形成有下部布线的基板上形成薄衬垫之后，通过硅源和下部布线之间的反应，提供硅源以在衬垫下方形成硅化物层，并且硅化物层 被氮化并形成蚀刻停止层。 因此，防止下部互连与硅源接触，可以防止下部布线的表面电阻的变化，从而可以制造高速器件。