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公开(公告)号：US07067083B2
公开(公告)日：2006-06-27
申请号：US11105898
申请日：2005-04-13
CPC分类号： C08G79/04
摘要： High refractive index, melt processable polyphosphonates and methods for preparing the same are provided. These polymers are particularly useful for optical and ophthalmic parts, such as lenses. A method of preparing optical and ophthalmic lenses by injection molding the polymers of the present invention into the form of the optical or ophthalmic lenses is also provided.
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公开(公告)号：US07375178B2
公开(公告)日：2008-05-20
申请号：US11475542
申请日：2006-06-27
CPC分类号： C08G79/04
摘要： High refractive index, melt processable polyphosphonates and methods for preparing the same are provided. These polymers are particularly useful for optical and ophthalmic parts, such as lenses. A method of preparing optical and ophthalmic lenses by injection molding the polymers of the present invention into the form of the optical or ophthalmic lenses is also provided.
摘要翻译： 提供高折射率，可熔融加工的聚膦酸盐及其制备方法。 这些聚合物特别适用于光学和眼科部件，例如透镜。 还提供了通过将本发明的聚合物注射成光学或眼科镜片的形式来制备光学和眼科镜片的方法。
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公开(公告)号：US06288210B1
公开(公告)日：2001-09-11
申请号：US09439825
申请日：1999-11-12
IPC分类号： C08G7902
CPC分类号： C08G79/04
摘要： High refractive index, melt processable polyphosphonates and methods for preparing the same are provided. These polymers are particularly useful for optical and ophthalmic parts, such as lenses. A method of preparing optical and ophthalmic lenses by injection molding the polymers of the present invention into the form of the optical or ophthalmic lenses is also provided.
摘要翻译： 提供高折射率，可熔融加工的聚膦酸盐及其制备方法。 这些聚合物特别适用于光学和眼科部件，例如透镜。 还提供了通过将本发明的聚合物注射成光学或眼科镜片的形式来制备光学和眼科镜片的方法。
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公开(公告)号：US06943221B2
公开(公告)日：2005-09-13
申请号：US10642922
申请日：2003-08-18
IPC分类号： G02C7/02 , C08G63/00 , C08G79/02 , C08G79/04 , G02B1/04 , G02B5/23 , C08F8/22 , C08G19/14 , C08G63/11
CPC分类号： C08G79/04
摘要： High refractive index, melt processable polyphosphonates and methods for preparing the same are provided. These polymers are particularly useful for optical and ophthalmic parts, such as lenses. A method of preparing optical and ophthalmic lenses by injection molding the polymers of the present invention into the form of the optical or ophthalmic lenses is also provided.
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公开(公告)号：US06653439B2
公开(公告)日：2003-11-25
申请号：US09887979
申请日：2001-06-22
IPC分类号： C08G7902
CPC分类号： C08G79/04
摘要： High refractive index, melt processable polyphosphonates and methods for preparing the same are provided. These polymers are particularly useful for optical and ophthalmic parts, such as lenses. A method of preparing optical and ophthalmic lenses by injection molding the polymers of the present invention into the form of the optical or ophthalmic lenses is also provided.
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6.发明申请BARRIER LAYER FORMATION FOR METAL INTERCONNECTS THROUGH ENHANCED IMPURITY DIFFUSION 有权金属互连的障碍层形成通过增强的强度扩张公开(公告)号：US20120061838A1
公开(公告)日：2012-03-15
申请号：US12882500
申请日：2010-09-15
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L23/53238 , H01L21/76832 , H01L21/76834 , H01L21/76849 , H01L21/76864 , H01L21/76867 , H01L21/76873 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a barrier layer for metal interconnects of an integrated circuit device includes forming a first cap layer over a top surface of a conductive line of the integrated circuit device in a manner that facilitates a controllable dose of oxygen provided to the top surface of the conductive line, the conductive line comprising a metal formed over a seed layer that is an impurity alloy of the metal; and annealing the integrated circuit device so as to combine diffused impurity atoms of the seed layer with the controllable dose of oxygen, thereby forming an impurity oxide layer at an interface between the first cap layer and the top surface of the conductive line.
摘要翻译： 形成用于集成电路器件的金属互连的势垒层的方法包括在集成电路器件的导电线的顶表面之上形成第一帽层，以便于提供给顶部表面的氧的可控剂量 所述导电线包括在作为所述金属的杂质合金的种子层上形成的金属; 以及对所述集成电路器件进行退火以将所述种子层的扩散杂质原子与可控量的氧组合，从而在所述第一覆盖层和所述导电线的顶表面之间的界面处形成杂质氧化物层。
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7.发明申请METHODS TO MITIGATE PLASMA DAMAGE IN ORGANOSILICATE DIELECTRICS USING A PROTECTIVE SIDEWALL SPACER 失效使用保护性顶板间隔器减少有机硅电极中的等离子体损伤的方法公开(公告)号：US20090072401A1
公开(公告)日：2009-03-19
申请号：US11857805
申请日：2007-09-19
申请人： John C. Arnold , Sampath Purushothaman , Muthumanickam Sankarapandian , Hosadurga K. Shobha , Terry A. Spooner
发明人： John C. Arnold , Sampath Purushothaman , Muthumanickam Sankarapandian , Hosadurga K. Shobha , Terry A. Spooner
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L23/5329 , H01L21/76808 , H01L21/76814 , H01L21/76825 , H01L21/76826 , H01L21/76831 , H01L2924/0002 , H01L2924/00
摘要： Plasma damage in ultra low k dielectric materials during formation of a dual damascene metal interconnect structure is reduced by providing a protective spacer on sidewalls of a line trench. A densified trench bottom region may be additionally formed directly beneath an exposed horizontal surface of the line trench. The protective spacer and/or the densified trench bottom region protects an ultra low k intermetal dielectric layer from plasma damage during a plasma strip process that is used to remove a disposable via fill plug employed in the dual damascene metal interconnect structure.
摘要翻译： 在形成双镶嵌金属互连结构的超低k电介质材料中的等离子体损伤通过在管线沟槽的侧壁上设置保护隔离物来减少。 致密沟槽底部区域可以直接附加地形成在线沟槽的暴露的水平表面下方。 保护间隔物和/或致密的沟槽底部区域在用于去除在双镶嵌金属互连结构中使用的一次性通孔填充塞的等离子体条带过程中保护超低k金属间介电层免受等离子体损伤。
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公开(公告)号：US08212337B2
公开(公告)日：2012-07-03
申请号：US11972175
申请日：2008-01-10
CPC分类号： H01L21/02263 , C23C16/325 , C23C16/56 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76832 , H01L21/76834
摘要： A carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. In some embodiments, the dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen. The carbon-rich silicon carbide-like dielectric film can be used as a dielectric cap layer in an interconnect structure. The inventive dielectric film is highly robust to UV curing and remains compressively stressed after UV curing. Moreover, the inventive dielectric film has good oxidation resistance and prevents metal diffusion into an interconnect dielectric layer. The present invention also provides an interconnect structure including the inventive dielectric film as a dielectric cap. A method of fabricating the inventive dielectric film is also provided.
摘要翻译： 提供碳浓度大于或等于约30原子％C并且介电常数小于或等于约4.5的富含碳的碳化硅状电介质膜。 在一些实施例中，电介质膜可以任选地包括氮。 当存在氮时，富含碳的碳化硅状电介质膜具有小于或等于约5原子％氮的浓度氮。 富碳碳化硅状电介质膜可以用作互连结构中的电介质盖层。 本发明的电介质膜对UV固化具有很强的鲁棒性，并且在UV固化后保持压缩应力。 此外，本发明的电介质膜具有良好的抗氧化性，并且防止金属扩散到互连电介质层中。 本发明还提供一种互连结构，其包括作为电介质盖的本发明的电介质膜。 还提供了制造本发明的电介质膜的方法。
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9.发明授权Methods to mitigate plasma damage in organosilicate dielectrics using a protective sidewall spacer 失效使用保护性侧壁间隔物减轻有机硅酸盐电介质中的等离子体损伤的方法公开(公告)号：US07781332B2
公开(公告)日：2010-08-24
申请号：US11857805
申请日：2007-09-19
申请人： John C. Arnold , Sampath Purushothaman , Muthumanickam Sankarapandian , Hosadurga K. Shobha , Terry A. Spooner
发明人： John C. Arnold , Sampath Purushothaman , Muthumanickam Sankarapandian , Hosadurga K. Shobha , Terry A. Spooner
IPC分类号： H01L21/4763 , H01L21/302
CPC分类号： H01L23/5329 , H01L21/76808 , H01L21/76814 , H01L21/76825 , H01L21/76826 , H01L21/76831 , H01L2924/0002 , H01L2924/00
摘要： Plasma damage in ultra low k dielectric materials during formation of a dual damascene metal interconnect structure is reduced by providing a protective spacer on sidewalls of a line trench. A densified trench bottom region may be additionally formed directly beneath an exposed horizontal surface of the line trench. The protective spacer and/or the densified trench bottom region protects an ultra low k intermetal dielectric layer from plasma damage during a plasma strip process that is used to remove a disposable via fill plug employed in the dual damascene metal interconnect structure.
摘要翻译： 在形成双镶嵌金属互连结构的超低k电介质材料中的等离子体损伤通过在管线沟槽的侧壁上设置保护隔离物来减少。 致密沟槽底部区域可以直接附加地形成在线沟槽的暴露的水平表面下方。 保护间隔物和/或致密的沟槽底部区域在用于去除在双镶嵌金属互连结构中使用的一次性通孔填充塞的等离子体条带过程中保护超低k金属间介电层免受等离子体损伤。
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10.发明申请公开(公告)号：US20090179306A1
公开(公告)日：2009-07-16
申请号：US11972175
申请日：2008-01-10
IPC分类号： H01L21/768 , H01L23/58 , H01L23/52
CPC分类号： H01L21/02263 , C23C16/325 , C23C16/56 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76832 , H01L21/76834
摘要： A carbon-rich silicon carbide-like dielectric film having a carbon concentration of greater than, or equal to, about 30 atomic % C and a dielectric constant of less than, or equal to, about 4.5 is provided. In some embodiments, the dielectric film may optionally include nitrogen. When nitrogen is present, the carbon-rich silicon carbide-like dielectric film has a concentration nitrogen that is less than, or equal, to about 5 atomic % nitrogen. The carbon-rich silicon carbide-like dielectric film can be used as a dielectric cap layer in an interconnect structure. The inventive dielectric film is highly robust to UV curing and remains compressively stressed after UV curing. Moreover, the inventive dielectric film has good oxidation resistance and prevents metal diffusion into an interconnect dielectric layer. The present invention also provides an interconnect structure including the inventive dielectric film as a dielectric cap. A method of fabricating the inventive dielectric film is also provided.
摘要翻译： 提供碳浓度大于或等于约30原子％C并且介电常数小于或等于约4.5的富含碳的碳化硅状电介质膜。 在一些实施例中，电介质膜可以任选地包括氮。 当存在氮时，富含碳的碳化硅状电介质膜具有小于或等于约5原子％氮的浓度氮。 富碳碳化硅状电介质膜可以用作互连结构中的电介质盖层。 本发明的电介质膜对UV固化具有很强的鲁棒性，并且在UV固化后保持压缩应力。 此外，本发明的电介质膜具有良好的抗氧化性，并且防止金属扩散到互连电介质层中。 本发明还提供一种互连结构，其包括作为电介质盖的本发明的电介质膜。 还提供了制造本发明的电介质膜的方法。
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